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Class Information
Number: 257/614
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) > Group ii-vi compound (e.g., cdte, hg x cd 1-x te)
Description: Subject matter wherein the semiconducting material other than silicon or gallium arsenide is a compound of the periodic table group II-VI (e.g., CdTe).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7326950 |
Memory device with switching glass layer |
Feb. 5, 2008 |
| 7288468 |
Luminescent efficiency of semiconductor nanocrystals by surface treatment |
Oct. 30, 2007 |
| 7242041 |
Field-effect transistors with weakly coupled layered inorganic semiconductors |
Jul. 10, 2007 |
| 7230282 |
III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
Jun. 12, 2007 |
| 7202503 |
III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
Apr. 10, 2007 |
| 7151306 |
Electronic part, and electronic part mounting element and an process for manufacturing such the articles |
Dec. 19, 2006 |
| 7135727 |
I-shaped and L-shaped contact structures and their fabrication methods |
Nov. 14, 2006 |
| 7135696 |
Phase change memory with damascene memory element |
Nov. 14, 2006 |
| 7129521 |
Semiconductor device and manufacture method thereof |
Oct. 31, 2006 |
| 7126195 |
Method for forming a metallization layer |
Oct. 24, 2006 |
| 7064346 |
Transistor and semiconductor device |
Jun. 20, 2006 |
| 7057202 |
Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
Jun. 6, 2006 |
| 6998697 |
Non-volatile resistance variable devices |
Feb. 14, 2006 |
| 6975012 |
Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate |
Dec. 13, 2005 |
| 6878975 |
Polarization field enhanced tunnel structures |
Apr. 12, 2005 |
| RE38582 |
Semiconductor diode with suppression of auger generation processes |
Sep. 14, 2004 |
| 6653664 |
Bandgap engineering of tfel devices |
Nov. 25, 2003 |
| 6589447 |
Compound semiconductor single crystal and fabrication process for compound semiconductor device |
Jul. 8, 2003 |
| 6566700 |
Carbon-containing interfacial layer for phase-change memory |
May. 20, 2003 |
| 6541863 |
Semiconductor device having a reduced signal processing time and a method of fabricating the same |
Apr. 1, 2003 |
| 6452206 |
Superlattice structures for use in thermoelectric devices |
Sep. 17, 2002 |
| 6420725 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
Jul. 16, 2002 |
| 6376866 |
GaN semiconductor light emitting device having a group II-VI substrate |
Apr. 23, 2002 |
| 6359290 |
Self-aligned bump bond infrared focal plane array architecture |
Mar. 19, 2002 |
| 6333110 |
Functionalized nanocrystals as visual tissue-specific imaging agents, and methods for fluorescence imaging |
Dec. 25, 2001 |
| 6319607 |
Purification of functionalized fluorescent nanocrystals |
Nov. 20, 2001 |
| 6312617 |
Conductive isostructural compounds |
Nov. 6, 2001 |
| 6309701 |
Fluorescent nanocrystal-labeled microspheres for fluorescence analyses |
Oct. 30, 2001 |
| 6281521 |
Silicon carbide horizontal channel buffered gate semiconductor devices |
Aug. 28, 2001 |
| 6274882 |
Indium-based alloy and an infrared transducer using such an alloy |
Aug. 14, 2001 |
| 6208005 |
Mercury-based quaternary alloys of infrared sensitive materials |
Mar. 27, 2001 |
| 6114038 |
Functionalized nanocrystals and their use in detection systems |
Sep. 5, 2000 |
| 6081019 |
Semiconductor diode with suppression of auger generation processes |
Jun. 27, 2000 |
| 6072198 |
Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants |
Jun. 6, 2000 |
| 6069020 |
Method of manufacturing semiconductor light-emitting device |
May. 30, 2000 |
| 6049116 |
Two-color infrared detector and fabrication method thereof |
Apr. 11, 2000 |
| 6043548 |
Semiconductor device with stabilized junction |
Mar. 28, 2000 |
| 5952703 |
Semiconductor devices and manufacturing method using II-VI compounds with wide area |
Sep. 14, 1999 |
| 5900071 |
Superlattice structures particularly suitable for use as thermoelectric materials |
May. 4, 1999 |
| 5883683 |
Nonlinear device |
Mar. 16, 1999 |
| 5831297 |
Structure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance device |
Nov. 3, 1998 |
| 5770887 |
Gan single crystal |
Jun. 23, 1998 |
| 5767536 |
II-VI group compound semiconductor device |
Jun. 16, 1998 |
| 5751018 |
Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
May. 12, 1998 |
| 5654583 |
Semiconductor device having first and second semiconductor structures directly bonded to each other |
Aug. 5, 1997 |
| 5654558 |
Interband lateral resonant tunneling transistor |
Aug. 5, 1997 |
| 5644165 |
Semiconductor device having a p-type ohmic electrode structure |
Jul. 1, 1997 |
| 5581117 |
Si base substrate covered by a CdTe or Cd-rich CdZnTe layer |
Dec. 3, 1996 |
| 5574296 |
Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer |
Nov. 12, 1996 |
| 5559359 |
Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
Sep. 24, 1996 |
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