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Class Information
Number: 257/613
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te)
Description: Subject matter under the subclass definition which includes semiconducting material other than silicon or gallium arsenide (GaAs).










Sub-classes under this class:

Class Number Class Name Patents
257/616 Containing germanium, ge 449
257/614 Group ii-vi compound (e.g., cdte, hg x cd 1-x te) 147
257/615 Group iii-v compound (e.g., inp) 502


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
5326991 Semiconductor device having silicon carbide grown layer on insulating layer and MOS device Jul. 5, 1994
5326995 Semiconductor device having a heterojunction interface for transporting carriers with improved carrier mobility Jul. 5, 1994
5323023 Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors Jun. 21, 1994
5306928 Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer Apr. 26, 1994
5300793 Hetero crystalline structure and semiconductor device using it Apr. 5, 1994
5299217 Semiconductor light-emitting device with cadmium zinc selenide layer Mar. 29, 1994
5294814 Vertical diamond field effect transistor Mar. 15, 1994
5285089 Diamond and silicon carbide heterojunction bipolar transistor Feb. 8, 1994
5279888 Silicon carbide semiconductor apparatus Jan. 18, 1994
5278430 Complementary semiconductor device using diamond thin film and the method of manufacturing this device Jan. 11, 1994
5256897 Oxide superconducting device Oct. 26, 1993
5243204 Silicon carbide light emitting diode and a method for the same Sep. 7, 1993
5216264 Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact Jun. 1, 1993
5200805 Silicon carbide:metal carbide alloy semiconductor and method of making the same Apr. 6, 1993
5192987 High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions Mar. 9, 1993
5177585 P-N-P diamond transistor Jan. 5, 1993
5173761 Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer Dec. 22, 1992
5170231 Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current Dec. 8, 1992
5142350 Transistor having cubic boron nitride layer Aug. 25, 1992
5136347 Semiconductor structure Aug. 4, 1992
5132749 Semiconductor device Jul. 21, 1992
5125984 Induced junction chalcopyrite solar cell Jun. 30, 1992
5078804 I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO Jan. 7, 1992
4992837 Light emitting semiconductor device Feb. 12, 1991
4987472 Compound semiconductor epitaxial wafer Jan. 22, 1991
4969032 Monolithic microwave integrated circuit having vertically stacked components Nov. 6, 1990
4962303 Infrared image detector utilizing Schottky barrier junctions Oct. 9, 1990
4915745 Thin film solar cell and method of making Apr. 10, 1990
4905068 Semiconductor device having interconnection layers of T-shape cross section Feb. 27, 1990
4900373 Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure Feb. 13, 1990
4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy Dec. 5, 1989
4870027 Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure Sep. 26, 1989
4857971 (IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V heterostructures Aug. 15, 1989
4847666 Hot electron transistors Jul. 11, 1989
4782377 Semiconducting metal silicide radiation detectors and source Nov. 1, 1988
4781767 Photoelectric conversion device Nov. 1, 1988
4751196 High voltage thin film transistor on PLZT and method of manufacture thereof Jun. 14, 1988
4687881 Solar cells based on CuInS.sub.2 Aug. 18, 1987
4350990 Electrode for lead-salt diodes Sep. 21, 1982
4323617 Semiconductor ceramic composition for boundary layer capacitors Apr. 6, 1982
4228454 High temperature cadmium boracite semiconductor device Oct. 14, 1980
4213781 Deposition of solid semiconductor compositions and novel semiconductor materials Jul. 22, 1980
4178196 Method for manufacturing an image pickup tube target Dec. 11, 1979
4159214 Formation of heterojunctions utilizing back-side surface roughening for stress relief Jun. 26, 1979
4120706 Heteroepitaxial deposition of gap on silicon substrates Oct. 17, 1978
4004342 Fabrication of ion implanted P-N junction devices Jan. 25, 1977
3997479 Method of reducing the evaporation of Pb during the manufacture of barium titanate (Pb substituted) semiconducting ceramics Dec. 14, 1976
3978360 III-V photocathode with nitrogen doping for increased quantum efficiency Aug. 31, 1976

1 2 3 4 5 6










 
 
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