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Class Information
Number: 257/612
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Deep level dopant > Deep level dopant other than gold or platinum
Description: Subject matter wherein the deep level dopant is other than gold or platinum.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7282781 |
Semiconductor device with a short-lifetime region and manufacturing method thereof |
Oct. 16, 2007 |
| 7259428 |
Semiconductor device using SOI structure having a triple-well region |
Aug. 21, 2007 |
| 7242037 |
Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices |
Jul. 10, 2007 |
| 7187057 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Mar. 6, 2007 |
| 7087981 |
Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method |
Aug. 8, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 6888171 |
Light emitting diode |
May. 3, 2005 |
| 6870199 |
Semiconductor device having an electrode overlaps a short carrier lifetime region |
Mar. 22, 2005 |
| 6853084 |
Substrate within a Ni/Au structure electroplated on electrical contact pads and method for fabricating the same |
Feb. 8, 2005 |
| 6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
Dec. 7, 2004 |
| 6812523 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
Nov. 2, 2004 |
| 6744116 |
Thin film using non-thermal techniques |
Jun. 1, 2004 |
| 6727147 |
MOSFET fabrication method |
Apr. 27, 2004 |
| 6713819 |
SOI MOSFET having amorphized source drain and method of fabrication |
Mar. 30, 2004 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6621101 |
Thin-film transistor |
Sep. 16, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6603189 |
Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein |
Aug. 5, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6498387 |
Wafer level package and the process of the same |
Dec. 24, 2002 |
| 6423570 |
Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby |
Jul. 23, 2002 |
| 6294828 |
Semiconductor chip package |
Sep. 25, 2001 |
| 6281521 |
Silicon carbide horizontal channel buffered gate semiconductor devices |
Aug. 28, 2001 |
| 6177685 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
Jan. 23, 2001 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6075259 |
Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages |
Jun. 13, 2000 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 5909051 |
Minority carrier semiconductor devices with improved stability |
Jun. 1, 1999 |
| 5856698 |
Second implanted matrix for agglomeration control and thermal stability |
Jan. 5, 1999 |
| 5739559 |
Compound semiconductor integrated circuit with a particular high resistance layer |
Apr. 14, 1998 |
| 5717244 |
Semiconductor device having layers with varying lifetime characteristics |
Feb. 10, 1998 |
| 5578865 |
Reduction of parasitic effects in floating body mosfets |
Nov. 26, 1996 |
| 5569953 |
Semiconductor device having an isolation region enriched in oxygen |
Oct. 29, 1996 |
| 5543637 |
Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
Aug. 6, 1996 |
| 5436498 |
Gettering of impurities by forming a stable chemical compound |
Jul. 25, 1995 |
| 5426329 |
Semiconductor device with arsenic doped silicon thin film interconnections or electrodes |
Jun. 20, 1995 |
| 5384477 |
CMOS latchup suppression by localized minority carrier lifetime reduction |
Jan. 24, 1995 |
| 5357130 |
Low-noise cryogenic MOSFET |
Oct. 18, 1994 |
| 5331193 |
Semiconductor device resistant to slip line formation |
Jul. 19, 1994 |
| 5280185 |
Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
Jan. 18, 1994 |
| 5272373 |
Internal gettering of oxygen in III-V compound semiconductors |
Dec. 21, 1993 |
| 5243205 |
Semiconductor device with overvoltage protective function |
Sep. 7, 1993 |
| 5229637 |
Semiconductor device |
Jul. 20, 1993 |
| 5153703 |
Semiconductor device |
Oct. 6, 1992 |
| 5151766 |
Semiconductor component |
Sep. 29, 1992 |
| 5144377 |
High-speed heterojunction light-emitting diode |
Sep. 1, 1992 |
| 5049966 |
Lateral transistor beta reduction by incorporation of electrically active material |
Sep. 17, 1991 |
| 5023696 |
Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other |
Jun. 11, 1991 |
| 4992840 |
Carbon doping MOSFET substrate to suppress hit electron trapping |
Feb. 12, 1991 |
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