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Class Information
Number: 257/612
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Deep level dopant > Deep level dopant other than gold or platinum
Description: Subject matter wherein the deep level dopant is other than gold or platinum.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8581366 Method and system for forming conductive bumping with copper interconnection Nov. 12, 2013
8492829 Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same Jul. 23, 2013
8283733 Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorus Oct. 9, 2012
8138576 Production method and production apparatus of tin or solder alloy for electronic components, and solder alloy Mar. 20, 2012
8124520 Integrated circuit mount system with solder mask pad Feb. 28, 2012
8076228 Low noise transistor and method of making same Dec. 13, 2011
7791172 Nonvolatile semiconductor memory device Sep. 7, 2010
7696605 Semiconductor component comprising a temporary field stopping area, and method for the production thereof Apr. 13, 2010
7667223 Solid-state optical device Feb. 23, 2010
7589359 Silicon controlled rectifier Sep. 15, 2009
7560783 Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method Jul. 14, 2009
7470926 Solid-state optical device Dec. 30, 2008
7432538 Field-effect transistor Oct. 7, 2008
7282781 Semiconductor device with a short-lifetime region and manufacturing method thereof Oct. 16, 2007
7259428 Semiconductor device using SOI structure having a triple-well region Aug. 21, 2007
7242037 Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices Jul. 10, 2007
7187057 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Mar. 6, 2007
7087981 Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method Aug. 8, 2006
7030464 Semiconductor device and method of manufacturing the same Apr. 18, 2006
6888171 Light emitting diode May. 3, 2005
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region Mar. 22, 2005
6853084 Substrate within a Ni/Au structure electroplated on electrical contact pads and method for fabricating the same Feb. 8, 2005
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6812523 Semiconductor wafer with ultra thin doping level formed by defect engineering Nov. 2, 2004
6744116 Thin film using non-thermal techniques Jun. 1, 2004
6727147 MOSFET fabrication method Apr. 27, 2004
6713819 SOI MOSFET having amorphized source drain and method of fabrication Mar. 30, 2004
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6621101 Thin-film transistor Sep. 16, 2003
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein Aug. 12, 2003
6603189 Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein Aug. 5, 2003
6552414 Semiconductor device with selectively diffused regions Apr. 22, 2003
6498387 Wafer level package and the process of the same Dec. 24, 2002
6423570 Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby Jul. 23, 2002
6294828 Semiconductor chip package Sep. 25, 2001
6281521 Silicon carbide horizontal channel buffered gate semiconductor devices Aug. 28, 2001
6177685 Nitride-type III-V HEMT having an InN 2DEG channel layer Jan. 23, 2001
6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby Nov. 28, 2000
6075259 Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages Jun. 13, 2000
6071751 Deuterium sintering with rapid quenching Jun. 6, 2000
5909051 Minority carrier semiconductor devices with improved stability Jun. 1, 1999
5856698 Second implanted matrix for agglomeration control and thermal stability Jan. 5, 1999
5739559 Compound semiconductor integrated circuit with a particular high resistance layer Apr. 14, 1998
5717244 Semiconductor device having layers with varying lifetime characteristics Feb. 10, 1998
5578865 Reduction of parasitic effects in floating body mosfets Nov. 26, 1996
5569953 Semiconductor device having an isolation region enriched in oxygen Oct. 29, 1996
5543637 Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein Aug. 6, 1996
5436498 Gettering of impurities by forming a stable chemical compound Jul. 25, 1995
5426329 Semiconductor device with arsenic doped silicon thin film interconnections or electrodes Jun. 20, 1995
5384477 CMOS latchup suppression by localized minority carrier lifetime reduction Jan. 24, 1995

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