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Class Information
Number: 257/611
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Deep level dopant > With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient)
Description: Subject matter wherein the deep level dopant has a particular, specified distribution (e.g., with a specified concentration distribution or gradient).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7422801 |
Electroluminescent fluorescent substance |
Sep. 9, 2008 |
| 7417248 |
Transistor with shallow germanium implantation region in channel |
Aug. 26, 2008 |
| 7404157 |
Evaluation device and circuit design method used for the same |
Jul. 22, 2008 |
| 7397110 |
High resistance silicon wafer and its manufacturing method |
Jul. 8, 2008 |
| 7265435 |
Method for implanting atomic species through an uneven surface of a semiconductor layer |
Sep. 4, 2007 |
| 7259428 |
Semiconductor device using SOI structure having a triple-well region |
Aug. 21, 2007 |
| 7242037 |
Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices |
Jul. 10, 2007 |
| 7242075 |
Silicon wafers and method of fabricating the same |
Jul. 10, 2007 |
| 7235863 |
Silicon wafer and process for producing it |
Jun. 26, 2007 |
| 7221037 |
Method of manufacturing group III nitride substrate and semiconductor device |
May. 22, 2007 |
| 7217975 |
Lateral type semiconductor device |
May. 15, 2007 |
| 7187057 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Mar. 6, 2007 |
| 7081664 |
Doped semiconductor powder and preparation thereof |
Jul. 25, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 6989567 |
LDMOS transistor |
Jan. 24, 2006 |
| 6933589 |
Method of making a semiconductor transistor |
Aug. 23, 2005 |
| 6878579 |
Semiconductor device and method of manufacturing the same |
Apr. 12, 2005 |
| 6855959 |
Nitride based semiconductor photo-luminescent device |
Feb. 15, 2005 |
| 6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
Dec. 7, 2004 |
| 6812523 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
Nov. 2, 2004 |
| 6806147 |
Method and apparatus for suppressing the channeling effect in high energy deep well implantation |
Oct. 19, 2004 |
| 6791106 |
Semiconductor device and method of manufacturing the same |
Sep. 14, 2004 |
| 6777732 |
Random access memory |
Aug. 17, 2004 |
| 6744116 |
Thin film using non-thermal techniques |
Jun. 1, 2004 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6621101 |
Thin-film transistor |
Sep. 16, 2003 |
| 6621145 |
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
Sep. 16, 2003 |
| 6611032 |
Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures |
Aug. 26, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6570233 |
Method of fabricating an integrated circuit |
May. 27, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6528851 |
Post-silicidation implant for introducing recombination center in body of SOI MOSFET |
Mar. 4, 2003 |
| 6486510 |
Reduction of reverse short channel effects by implantation of neutral dopants |
Nov. 26, 2002 |
| 6469368 |
Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method |
Oct. 22, 2002 |
| 6459141 |
Method and apparatus for suppressing the channeling effect in high energy deep well implantation |
Oct. 1, 2002 |
| 6420943 |
Conducting path with two different end characteristic impedances determined by doping |
Jul. 16, 2002 |
| 6414373 |
Semiconductor device and method of fabricating the same |
Jul. 2, 2002 |
| 6384455 |
MOS semiconductor device with shallow trench isolation structure and manufacturing method thereof |
May. 7, 2002 |
| 6376343 |
Reduction of metal silicide/silicon interface roughness by dopant implantation processing |
Apr. 23, 2002 |
| 6331457 |
Method for manufacturing a semiconductor thin film |
Dec. 18, 2001 |
| 6261874 |
Fast recovery diode and method for its manufacture |
Jul. 17, 2001 |
| 6222252 |
Semiconductor substrate and method for producing the same |
Apr. 24, 2001 |
| 6218683 |
Diode |
Apr. 17, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6198115 |
IGBT with reduced forward voltage drop and reduced switching loss |
Mar. 6, 2001 |
| 6180220 |
Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
Jan. 30, 2001 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6144094 |
Semiconductor device including an insulation film and electrode having nitrogen added thereto |
Nov. 7, 2000 |
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