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Class Information
Number: 257/610
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Deep level dopant
Description: Subject matter including a specified dopant which establishes traps in the forbidden band of a semiconductor into which carriers may drop or rise.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7282781 |
Semiconductor device with a short-lifetime region and manufacturing method thereof |
Oct. 16, 2007 |
| 7259428 |
Semiconductor device using SOI structure having a triple-well region |
Aug. 21, 2007 |
| 7235863 |
Silicon wafer and process for producing it |
Jun. 26, 2007 |
| 7199431 |
Semiconductor devices with reduced impact from alien particles |
Apr. 3, 2007 |
| 7187057 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Mar. 6, 2007 |
| 7123314 |
Thin-film transistor with set trap level densities, and method of manufactures |
Oct. 17, 2006 |
| 7087981 |
Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method |
Aug. 8, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 6812523 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
Nov. 2, 2004 |
| 6794731 |
Minority carrier semiconductor devices with improved reliability |
Sep. 21, 2004 |
| 6780685 |
Semiconductor device and manufacturing method thereof |
Aug. 24, 2004 |
| 6765227 |
Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding |
Jul. 20, 2004 |
| 6744116 |
Thin film using non-thermal techniques |
Jun. 1, 2004 |
| 6713819 |
SOI MOSFET having amorphized source drain and method of fabrication |
Mar. 30, 2004 |
| 6707131 |
Semiconductor device and manufacturing method for the same |
Mar. 16, 2004 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6570233 |
Method of fabricating an integrated circuit |
May. 27, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6548886 |
Silicon semiconductor wafer and method for producing the same |
Apr. 15, 2003 |
| 6459141 |
Method and apparatus for suppressing the channeling effect in high energy deep well implantation |
Oct. 1, 2002 |
| 6432844 |
Implanted conductor and methods of making |
Aug. 13, 2002 |
| 6429151 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers |
Aug. 6, 2002 |
| 6420775 |
Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression |
Jul. 16, 2002 |
| 6399959 |
Thin film transistor with reduced metal impurities |
Jun. 4, 2002 |
| 6384455 |
MOS semiconductor device with shallow trench isolation structure and manufacturing method thereof |
May. 7, 2002 |
| 6369434 |
Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors |
Apr. 9, 2002 |
| 6362510 |
Semiconductor topography having improved active device isolation and reduced dopant migration |
Mar. 26, 2002 |
| 6331457 |
Method for manufacturing a semiconductor thin film |
Dec. 18, 2001 |
| 6291874 |
Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring |
Sep. 18, 2001 |
| 6281530 |
LPNP utilizing base ballast resistor |
Aug. 28, 2001 |
| 6261874 |
Fast recovery diode and method for its manufacture |
Jul. 17, 2001 |
| 6218683 |
Diode |
Apr. 17, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6191010 |
Process for preparing an ideal oxygen precipitating silicon wafer |
Feb. 20, 2001 |
| 6180269 |
GaAs single crystal substrate and epitaxial wafer using the same |
Jan. 30, 2001 |
| 6177685 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
Jan. 23, 2001 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6120749 |
Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
Sep. 19, 2000 |
| 6093955 |
Power semiconductor device |
Jul. 25, 2000 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 5969407 |
MOSFET device with an amorphized source |
Oct. 19, 1999 |
| 5909051 |
Minority carrier semiconductor devices with improved stability |
Jun. 1, 1999 |
| 5864166 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Jan. 26, 1999 |
| 5838057 |
Transistor switches |
Nov. 17, 1998 |
| 5757063 |
Semiconductor device having an extrinsic gettering film |
May. 26, 1998 |
| 5747872 |
Fast power diode |
May. 5, 1998 |
| 5742092 |
Semiconductor structures, methods for controlling their conductivity and sensing elements based on these semiconductor structure |
Apr. 21, 1998 |
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