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Class Information
Number: 257/610
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Deep level dopant
Description: Subject matter including a specified dopant which establishes traps in the forbidden band of a semiconductor into which carriers may drop or rise.










Sub-classes under this class:

Class Number Class Name Patents
257/612 Deep level dopant other than gold or platinum 85
257/611 With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient) 140


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8575652 Semiconductor device and manufacturing method thereof Nov. 5, 2013
8513676 Semiconductor device and method for manufacturing same Aug. 20, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8399953 Semiconductor device and method for manufacturing the same Mar. 19, 2013
8357995 Semiconductor element Jan. 22, 2013
8217440 Semiconductor device and method of fabricating the same Jul. 10, 2012
8106483 Wafer with improved intrinsic gettering ability Jan. 31, 2012
8053867 Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants Nov. 8, 2011
8013417 Low cost substrates and method of forming such substrates Sep. 6, 2011
7928486 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system Apr. 19, 2011
7879702 Method for manufacturing a semiconductor device including a memory cell array area and peripheral circuit area Feb. 1, 2011
7847313 Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device Dec. 7, 2010
7804870 Semiconductor optical device and manufacturing method thereof Sep. 28, 2010
7696605 Semiconductor component comprising a temporary field stopping area, and method for the production thereof Apr. 13, 2010
7637997 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal Dec. 29, 2009
7541663 P-type silicon wafer and method for heat-treating the same Jun. 2, 2009
7537657 Silicon wafer and process for producing it May. 26, 2009
7485920 Process to create buried heavy metal at selected depth Feb. 3, 2009
7470605 Method for fabrication of a MOS transistor Dec. 30, 2008
7432538 Field-effect transistor Oct. 7, 2008
7282781 Semiconductor device with a short-lifetime region and manufacturing method thereof Oct. 16, 2007
7259428 Semiconductor device using SOI structure having a triple-well region Aug. 21, 2007
7235863 Silicon wafer and process for producing it Jun. 26, 2007
7199431 Semiconductor devices with reduced impact from alien particles Apr. 3, 2007
7187057 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Mar. 6, 2007
7123314 Thin-film transistor with set trap level densities, and method of manufactures Oct. 17, 2006
7087981 Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method Aug. 8, 2006
7030464 Semiconductor device and method of manufacturing the same Apr. 18, 2006
6812523 Semiconductor wafer with ultra thin doping level formed by defect engineering Nov. 2, 2004
6794731 Minority carrier semiconductor devices with improved reliability Sep. 21, 2004
6780685 Semiconductor device and manufacturing method thereof Aug. 24, 2004
6765227 Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding Jul. 20, 2004
6744116 Thin film using non-thermal techniques Jun. 1, 2004
6713819 SOI MOSFET having amorphized source drain and method of fabrication Mar. 30, 2004
6707131 Semiconductor device and manufacturing method for the same Mar. 16, 2004
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Oct. 21, 2003
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein Aug. 12, 2003
6570233 Method of fabricating an integrated circuit May. 27, 2003
6552414 Semiconductor device with selectively diffused regions Apr. 22, 2003
6548886 Silicon semiconductor wafer and method for producing the same Apr. 15, 2003
6459141 Method and apparatus for suppressing the channeling effect in high energy deep well implantation Oct. 1, 2002
6432844 Implanted conductor and methods of making Aug. 13, 2002
6429151 Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers Aug. 6, 2002
6420775 Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression Jul. 16, 2002
6399959 Thin film transistor with reduced metal impurities Jun. 4, 2002
6384455 MOS semiconductor device with shallow trench isolation structure and manufacturing method thereof May. 7, 2002
6369434 Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors Apr. 9, 2002
6362510 Semiconductor topography having improved active device isolation and reduced dopant migration Mar. 26, 2002

1 2 3










 
 
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