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Class Information
Number: 257/609
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > For compound semiconductor (e.g., deep level dopant)
Description: Subject matter wherein the specified dopant is in a compound semiconductor (e.g., GaAs).

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8604591 Nitride-type semiconductor element and process for production thereof Dec. 10, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8421190 Group III nitride semiconductor substrate and manufacturing method thereof Apr. 16, 2013
8253220 Nitride semiconductor device and method for fabricating the same Aug. 28, 2012
8212260 P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material Jul. 3, 2012
8183668 Gallium nitride substrate May. 22, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012
8106483 Wafer with improved intrinsic gettering ability Jan. 31, 2012
7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate Apr. 5, 2011
7898062 Epitaxial semiconductor layer and method Mar. 1, 2011
7884354 Germanium on insulator (GOI) semiconductor substrates Feb. 8, 2011
7872285 Vertical gallium nitride semiconductor device and epitaxial substrate Jan. 18, 2011
7847313 Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device Dec. 7, 2010
7834422 Implanted counted dopant ions Nov. 16, 2010
7705429 Epitaxial semiconductor layer and method Apr. 27, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate Feb. 23, 2010
7629670 Radiation-emitting semi-conductor component Dec. 8, 2009
7615804 Superlattice nitride semiconductor LD device Nov. 10, 2009
7489019 Epitaxial semiconductor layer and method Feb. 10, 2009
7470970 Oxygen-doped n-type gallium nitride freestanding single crystal substrate Dec. 30, 2008
7327032 Semiconductor package accomplishing fan-out structure through wire bonding Feb. 5, 2008
7288791 Epitaxial wafer and method for manufacturing method Oct. 30, 2007
7221037 Method of manufacturing group III nitride substrate and semiconductor device May. 22, 2007
7126052 Isoelectronic surfactant induced sublattice disordering in optoelectronic devices Oct. 24, 2006
7087449 Oxygen-doped Al-containing current blocking layers in active semiconductor devices Aug. 8, 2006
7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate Mar. 14, 2006
6879012 Giant planar hall effect in epitaxial ferromagnetic semiconductor devices Apr. 12, 2005
6734515 Semiconductor light receiving element May. 11, 2004
6680497 Interstitial diffusion barrier Jan. 20, 2004
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6590236 Semiconductor structure for use with high-frequency signals Jul. 8, 2003
6552414 Semiconductor device with selectively diffused regions Apr. 22, 2003
6525349 Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD Feb. 25, 2003
6483134 Integrated circuits with immunity to single event effects Nov. 19, 2002
6432844 Implanted conductor and methods of making Aug. 13, 2002
6429471 Compound semiconductor field effect transistor and method for the fabrication thereof Aug. 6, 2002
6420775 Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression Jul. 16, 2002
6180269 GaAs single crystal substrate and epitaxial wafer using the same Jan. 30, 2001
6172420 Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact Jan. 9, 2001
6153895 p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device Nov. 28, 2000
6147364 Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan Nov. 14, 2000
6071751 Deuterium sintering with rapid quenching Jun. 6, 2000
6002142 Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Dec. 14, 1999
5998674 Bromine compound production method Dec. 7, 1999
5982024 High concentration doped semiconductor Nov. 9, 1999
5903017 Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN May. 11, 1999
5844303 Semiconductor device having improved electronic isolation Dec. 1, 1998

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