| |
 |
|
Class Information
Number: 257/609
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > For compound semiconductor (e.g., deep level dopant)
Description: Subject matter wherein the specified dopant is in a compound semiconductor (e.g., GaAs).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7327032 |
Semiconductor package accomplishing fan-out structure through wire bonding |
Feb. 5, 2008 |
| 7288791 |
Epitaxial wafer and method for manufacturing method |
Oct. 30, 2007 |
| 7221037 |
Method of manufacturing group III nitride substrate and semiconductor device |
May. 22, 2007 |
| 7126052 |
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices |
Oct. 24, 2006 |
| 7087449 |
Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
Aug. 8, 2006 |
| 7012318 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
Mar. 14, 2006 |
| 6879012 |
Giant planar hall effect in epitaxial ferromagnetic semiconductor devices |
Apr. 12, 2005 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6680497 |
Interstitial diffusion barrier |
Jan. 20, 2004 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6590236 |
Semiconductor structure for use with high-frequency signals |
Jul. 8, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6525349 |
Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD |
Feb. 25, 2003 |
| 6483134 |
Integrated circuits with immunity to single event effects |
Nov. 19, 2002 |
| 6432844 |
Implanted conductor and methods of making |
Aug. 13, 2002 |
| 6429471 |
Compound semiconductor field effect transistor and method for the fabrication thereof |
Aug. 6, 2002 |
| 6420775 |
Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression |
Jul. 16, 2002 |
| 6180269 |
GaAs single crystal substrate and epitaxial wafer using the same |
Jan. 30, 2001 |
| 6172420 |
Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact |
Jan. 9, 2001 |
| 6153895 |
p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device |
Nov. 28, 2000 |
| 6147364 |
Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan |
Nov. 14, 2000 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 6002142 |
Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions |
Dec. 14, 1999 |
| 5998674 |
Bromine compound production method |
Dec. 7, 1999 |
| 5982024 |
High concentration doped semiconductor |
Nov. 9, 1999 |
| 5903017 |
Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
May. 11, 1999 |
| 5844303 |
Semiconductor device having improved electronic isolation |
Dec. 1, 1998 |
| 5569953 |
Semiconductor device having an isolation region enriched in oxygen |
Oct. 29, 1996 |
| 5536953 |
Wide bandgap semiconductor device including lightly doped active region |
Jul. 16, 1996 |
| 5455429 |
Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material |
Oct. 3, 1995 |
| 5422731 |
Semiconductor arrangement made of compound semiconductor material |
Jun. 6, 1995 |
| 5329151 |
Semiconductor diode |
Jul. 12, 1994 |
| 5315133 |
Compound semiconductor structure including p-type and n-type regions doped with carbon |
May. 24, 1994 |
| 5293074 |
Ohmic contact to p-type ZnSe |
Mar. 8, 1994 |
| 5291041 |
AlGaAs/GaAs thyristor |
Mar. 1, 1994 |
| 5272373 |
Internal gettering of oxygen in III-V compound semiconductors |
Dec. 21, 1993 |
| 5231298 |
GaAs device having a strain-free c-doped layer |
Jul. 27, 1993 |
| 5229637 |
Semiconductor device |
Jul. 20, 1993 |
| 5162891 |
Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same |
Nov. 10, 1992 |
| 5153703 |
Semiconductor device |
Oct. 6, 1992 |
| 5140385 |
Light emitting element and method of manufacture |
Aug. 18, 1992 |
| 5132747 |
Avalanche photo diode |
Jul. 21, 1992 |
| 5068695 |
Low dislocation density semiconductor device |
Nov. 26, 1991 |
| 5068705 |
Junction field effect transistor with bipolar device and method |
Nov. 26, 1991 |
| 5065200 |
Geometry dependent doping and electronic devices produced thereby |
Nov. 12, 1991 |
| 5063420 |
Method for making an LED array |
Nov. 5, 1991 |
| 4980730 |
Light emitting element of cubic boron nitride |
Dec. 25, 1990 |
| 4956698 |
Group III-V compound semiconductor device having p-region formed by Be and Group V ions |
Sep. 11, 1990 |
| 4939562 |
Heterojunction bipolar transistors and method of manufacture |
Jul. 3, 1990 |
| 4935795 |
Avalanche photodiode with uniform avalanche multiplication |
Jun. 19, 1990 |
|
|
|
