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Class Information
Number: 257/608
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Switching device based on filling and emptying of deep energy levels
Description: Subject matter wherein the device utilizes charge carrier filling and emptying of deep energy levels within the forbidden gap of semiconductor material of the device to produce a switching or ON/OFF action.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7411212 |
Switching device for a pixel electrode and methods for fabricating the same |
Aug. 12, 2008 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6664600 |
Graded LDD implant process for sub-half-micron MOS devices |
Dec. 16, 2003 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6628680 |
Photoconductive switch with integral wavelength converter |
Sep. 30, 2003 |
| 6621146 |
Method and apparatus for the use of embedded resistance to linearize and improve the matching properties of transistors |
Sep. 16, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6410413 |
Semiconductor device with transparent link area for silicide applications and fabrication thereof |
Jun. 25, 2002 |
| 6404045 |
IGBT and free-wheeling diode combination |
Jun. 11, 2002 |
| 6326675 |
Semiconductor device with transparent link area for silicide applications and fabrication thereof |
Dec. 4, 2001 |
| 6300680 |
Semiconductor substrate and manufacturing method thereof |
Oct. 9, 2001 |
| 6107643 |
Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof |
Aug. 22, 2000 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 5998674 |
Bromine compound production method |
Dec. 7, 1999 |
| 5864166 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Jan. 26, 1999 |
| 5448098 |
Superconductive photoelectric switch |
Sep. 5, 1995 |
| 5329151 |
Semiconductor diode |
Jul. 12, 1994 |
| 5272372 |
High speed non-volatile programmable read only memory device fabricated by using selective doping technology |
Dec. 21, 1993 |
| 5068704 |
Method of manufacturing semiconductor device |
Nov. 26, 1991 |
| 4982258 |
Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
Jan. 1, 1991 |
| 4845532 |
Semiconductor devices |
Jul. 4, 1989 |
| 4799091 |
Quantum device output switch |
Jan. 17, 1989 |
| 4777149 |
Method of manufacturing power MOSFET |
Oct. 11, 1988 |
| 4266990 |
Process for diffusion of aluminum into a semiconductor |
May. 12, 1981 |
| 4148672 |
Glass passivated gold diffused rectifier pellet and method for making |
Apr. 10, 1979 |
| 4140560 |
Process for manufacture of fast recovery diodes |
Feb. 20, 1979 |
| 4046608 |
Method of producing semiconductor components and product thereof |
Sep. 6, 1977 |
| 3972742 |
Deep power diode |
Aug. 3, 1976 |
| 3953243 |
Method for setting the lifetime of charge carriers in semiconductor bodies |
Apr. 27, 1976 |
| 3949120 |
Method of making high speed silicon switching diodes |
Apr. 6, 1976 |
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