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Class Information
Number: 257/608
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region) > Switching device based on filling and emptying of deep energy levels
Description: Subject matter wherein the device utilizes charge carrier filling and emptying of deep energy levels within the forbidden gap of semiconductor material of the device to produce a switching or ON/OFF action.










Patents under this class:

Patent Number Title Of Patent Date Issued
8569172 Noble metal/non-noble metal electrode for RRAM applications Oct. 29, 2013
8563959 Resistive-switching memory element Oct. 22, 2013
8406004 Integrated circuit packaging system and method of manufacture thereof Mar. 26, 2013
8080863 Semiconductor device and method of manufacturing the same Dec. 20, 2011
7855450 Circuit module Dec. 21, 2010
7741638 Control layer for a nanoscale electronic switching device Jun. 22, 2010
7696605 Semiconductor component comprising a temporary field stopping area, and method for the production thereof Apr. 13, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7589359 Silicon controlled rectifier Sep. 15, 2009
7411212 Switching device for a pixel electrode and methods for fabricating the same Aug. 12, 2008
6734515 Semiconductor light receiving element May. 11, 2004
6664600 Graded LDD implant process for sub-half-micron MOS devices Dec. 16, 2003
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6628680 Photoconductive switch with integral wavelength converter Sep. 30, 2003
6621146 Method and apparatus for the use of embedded resistance to linearize and improve the matching properties of transistors Sep. 16, 2003
6552414 Semiconductor device with selectively diffused regions Apr. 22, 2003
6410413 Semiconductor device with transparent link area for silicide applications and fabrication thereof Jun. 25, 2002
6404045 IGBT and free-wheeling diode combination Jun. 11, 2002
6326675 Semiconductor device with transparent link area for silicide applications and fabrication thereof Dec. 4, 2001
6300680 Semiconductor substrate and manufacturing method thereof Oct. 9, 2001
6107643 Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof Aug. 22, 2000
6071751 Deuterium sintering with rapid quenching Jun. 6, 2000
5998674 Bromine compound production method Dec. 7, 1999
5864166 Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources Jan. 26, 1999
5448098 Superconductive photoelectric switch Sep. 5, 1995
5329151 Semiconductor diode Jul. 12, 1994
5272372 High speed non-volatile programmable read only memory device fabricated by using selective doping technology Dec. 21, 1993
5068704 Method of manufacturing semiconductor device Nov. 26, 1991
4982258 Metal oxide semiconductor gated turn-off thyristor including a low lifetime region Jan. 1, 1991
4845532 Semiconductor devices Jul. 4, 1989
4799091 Quantum device output switch Jan. 17, 1989
4777149 Method of manufacturing power MOSFET Oct. 11, 1988
4266990 Process for diffusion of aluminum into a semiconductor May. 12, 1981
4148672 Glass passivated gold diffused rectifier pellet and method for making Apr. 10, 1979
4140560 Process for manufacture of fast recovery diodes Feb. 20, 1979
4046608 Method of producing semiconductor components and product thereof Sep. 6, 1977
3972742 Deep power diode Aug. 3, 1976
3953243 Method for setting the lifetime of charge carriers in semiconductor bodies Apr. 27, 1976
3949120 Method of making high speed silicon switching diodes Apr. 6, 1976











 
 
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