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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4111719 |
Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
Sep. 5, 1978 |
| 4101923 |
Solar cells |
Jul. 18, 1978 |
| 4086108 |
Selective doping crystal growth method |
Apr. 25, 1978 |
| 4069067 |
Method of making a semiconductor device |
Jan. 17, 1978 |
| 4050967 |
Method of selective aluminum diffusion |
Sep. 27, 1977 |
| 4048350 |
Semiconductor device having reduced surface leakage and methods of manufacture |
Sep. 13, 1977 |
| 4043836 |
Method of manufacturing semiconductor devices |
Aug. 23, 1977 |
| 4040878 |
Semiconductor device manufacture |
Aug. 9, 1977 |
| 4029528 |
Method of selectively doping a semiconductor body |
Jun. 14, 1977 |
| 4029527 |
Method of producing a doped zone of a given conductivity type in a semiconductor body |
Jun. 14, 1977 |
| 4028720 |
Photovoltaic device |
Jun. 7, 1977 |
| 4027051 |
Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation |
May. 31, 1977 |
| 4003759 |
Ion implantation of gold in mercury cadmium telluride |
Jan. 18, 1977 |
| 3997379 |
Diffusion of conductivity modifiers into a semiconductor body |
Dec. 14, 1976 |
| 3997909 |
High carrier velocity magnetic sensor |
Dec. 14, 1976 |
| 3979272 |
Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby |
Sep. 7, 1976 |
| 3975756 |
Gadolinium doped germanium |
Aug. 17, 1976 |
| 3972741 |
Multiple p-n junction formation with an alloy droplet |
Aug. 3, 1976 |
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