With specified dopant (e.g., plural dopants of same conductivity in same region) > Patents

Resources

Home

Browse by:

Browse by Category: Main > Physics

Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.

Sub-classes under this class:

Class Number	Class Name	Patents
257/610	Deep level dopant	89
257/609	For compound semiconductor (e.g., deep level dopant)	102
257/608	Switching device based on filling and emptying of deep energy levels	30

Patents under this class:

1 2 3 4 5 6

Patent Number	Title Of Patent	Date Issued
4029527	Method of producing a doped zone of a given conductivity type in a semiconductor body	Jun. 14, 1977
4028720	Photovoltaic device	Jun. 7, 1977
4027051	Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation	May. 31, 1977
4003759	Ion implantation of gold in mercury cadmium telluride	Jan. 18, 1977
3997379	Diffusion of conductivity modifiers into a semiconductor body	Dec. 14, 1976
3997909	High carrier velocity magnetic sensor	Dec. 14, 1976
3979272	Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby	Sep. 7, 1976
3975756	Gadolinium doped germanium	Aug. 17, 1976
3972741	Multiple p-n junction formation with an alloy droplet	Aug. 3, 1976