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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4782028 |
Process methodology for two-sided fabrication of devices on thinned silicon |
Nov. 1, 1988 |
| 4769689 |
Stress relief in epitaxial wafers |
Sep. 6, 1988 |
| 4746964 |
Modification of properties of p-type dopants with other p-type dopants |
May. 24, 1988 |
| 4722913 |
Doped semiconductor vias to contacts |
Feb. 2, 1988 |
| 4721683 |
Use of alkylphosphines and alkylarsines in ion implantation |
Jan. 26, 1988 |
| 4689667 |
Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms |
Aug. 25, 1987 |
| 4683645 |
Process of fabricating MOS devices having shallow source and drain junctions |
Aug. 4, 1987 |
| 4667218 |
NPN transistor with base double doped with arsenic and boron |
May. 19, 1987 |
| 4637836 |
Profile control of boron implant |
Jan. 20, 1987 |
| 4621411 |
Laser-enhanced drive in of source and drain diffusions |
Nov. 11, 1986 |
| 4584026 |
Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions |
Apr. 22, 1986 |
| 4566175 |
Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations |
Jan. 28, 1986 |
| 4560582 |
Method of preparing a semiconductor device |
Dec. 24, 1985 |
| 4559696 |
Ion implantation to increase emitter energy gap in bipolar transistors |
Dec. 24, 1985 |
| 4515642 |
Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby |
May. 7, 1985 |
| 4513310 |
Semiconductor device capable of structural selection |
Apr. 23, 1985 |
| 4502206 |
Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region |
Mar. 5, 1985 |
| 4499483 |
Silicon photodiode with n-type control layer |
Feb. 12, 1985 |
| 4482393 |
Method of activating implanted ions by incoherent light beam |
Nov. 13, 1984 |
| 4447272 |
Method for fabricating MNOS structures utilizing hydrogen ion implantation |
May. 8, 1984 |
| 4426234 |
Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing |
Jan. 17, 1984 |
| 4415370 |
Method of beryllium implantation in germanium substrate |
Nov. 15, 1983 |
| 4412235 |
Integrated opto-electronic relay using a semiconductor with persistent photoconductivity and a matrix of such relays |
Oct. 25, 1983 |
| 4406710 |
Mask-saving technique for forming CMOS source/drain regions |
Sep. 27, 1983 |
| 4394180 |
Method of forming high resistivity regions in GaAs by deuteron implantation |
Jul. 19, 1983 |
| 4383268 |
High-current, high-voltage semiconductor devices having a metallurgical grade substrate |
May. 10, 1983 |
| 4371403 |
Method of providing gettering sites through electrode windows |
Feb. 1, 1983 |
| 4369072 |
Method for forming IGFET devices having improved drain voltage characteristics |
Jan. 18, 1983 |
| 4368083 |
Process for doping semiconductors |
Jan. 11, 1983 |
| 4364778 |
Formation of multilayer dopant distributions in a semiconductor |
Dec. 21, 1982 |
| 4353754 |
Thermo-sensitive switching element manufacturing method |
Oct. 12, 1982 |
| 4332627 |
Method of eliminating lattice defects in a semiconductor device |
Jun. 1, 1982 |
| 4329774 |
Silicon resistor having a very low temperature coefficient |
May. 18, 1982 |
| 4240096 |
Fluorine-doped P type silicon |
Dec. 16, 1980 |
| 4223336 |
Low resistivity ohmic contacts for compound semiconductor devices |
Sep. 16, 1980 |
| 4210466 |
Process for preparing heat sensitive semiconductor switch |
Jul. 1, 1980 |
| 4181538 |
Method for making defect-free zone by laser-annealing of doped silicon |
Jan. 1, 1980 |
| 4151011 |
Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure |
Apr. 24, 1979 |
| 4149905 |
Method of limiting stacking faults in oxidized silicon wafers |
Apr. 17, 1979 |
| 4137103 |
Silicon integrated circuit region containing implanted arsenic and germanium |
Jan. 30, 1979 |
| 4116719 |
Method of making semiconductor device with PN junction in stacking-fault free zone |
Sep. 26, 1978 |
| 4111719 |
Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
Sep. 5, 1978 |
| 4101923 |
Solar cells |
Jul. 18, 1978 |
| 4086108 |
Selective doping crystal growth method |
Apr. 25, 1978 |
| 4069067 |
Method of making a semiconductor device |
Jan. 17, 1978 |
| 4050967 |
Method of selective aluminum diffusion |
Sep. 27, 1977 |
| 4048350 |
Semiconductor device having reduced surface leakage and methods of manufacture |
Sep. 13, 1977 |
| 4043836 |
Method of manufacturing semiconductor devices |
Aug. 23, 1977 |
| 4040878 |
Semiconductor device manufacture |
Aug. 9, 1977 |
| 4029528 |
Method of selectively doping a semiconductor body |
Jun. 14, 1977 |
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