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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5345104 |
Flash memory cell having antimony drain for reduced drain voltage during programming |
Sep. 6, 1994 |
| 5343062 |
Semiconductor memory having a memory cell including a capacitor with a two-layer lower electrode |
Aug. 30, 1994 |
| 5341022 |
Bipolar transistor having a high ion concentration buried floating collector and method of fabricating the same |
Aug. 23, 1994 |
| 5338945 |
Silicon carbide field effect transistor |
Aug. 16, 1994 |
| 5331185 |
Field effect transistor having a GaInAs/GaAs quantum well structure |
Jul. 19, 1994 |
| 5329151 |
Semiconductor diode |
Jul. 12, 1994 |
| 5321302 |
Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency |
Jun. 14, 1994 |
| 5315131 |
Electrically reprogrammable nonvolatile memory device |
May. 24, 1994 |
| 5311040 |
Thin film transistor with nitrogen concentration gradient |
May. 10, 1994 |
| 5294823 |
SOI BICMOS process |
Mar. 15, 1994 |
| 5281831 |
Optical semiconductor device |
Jan. 25, 1994 |
| 5280185 |
Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
Jan. 18, 1994 |
| 5254862 |
Diamond field-effect transistor with a particular boron distribution profile |
Oct. 19, 1993 |
| 5250832 |
MOS type semiconductor memory device |
Oct. 5, 1993 |
| 5248890 |
Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device |
Sep. 28, 1993 |
| 5245208 |
Semiconductor device and manufacturing method thereof |
Sep. 14, 1993 |
| 5245209 |
Semiconductor device including complementary insulating gate field effect transistors and bipolar transistors in semiconductor substrate |
Sep. 14, 1993 |
| 5243212 |
Transistor with a charge induced drain extension |
Sep. 7, 1993 |
| 5223721 |
Diamond n-type semiconductor diamond p-n junction diode |
Jun. 29, 1993 |
| 5210431 |
Ohmic connection electrodes for p-type semiconductor diamonds |
May. 11, 1993 |
| 5187558 |
Stress reduction structure for a resin sealed semiconductor device |
Feb. 16, 1993 |
| 5187559 |
Semiconductor device and process for producing same |
Feb. 16, 1993 |
| 5150177 |
Schottky diode structure with localized diode well |
Sep. 22, 1992 |
| 5134447 |
Neutral impurities to increase lifetime of operation of semiconductor devices |
Jul. 28, 1992 |
| 5095358 |
Application of electronic properties of germanium to inhibit N-type or P-type diffusion in silicon |
Mar. 10, 1992 |
| 5070387 |
Semiconductor device comprising unidimensional doping conductors and method of manufacturing such a semiconductor device |
Dec. 3, 1991 |
| 5053383 |
Method of reducing critical current density of oxide superconductors by radiation damage |
Oct. 1, 1991 |
| 5051785 |
N-type semiconducting diamond, and method of making the same |
Sep. 24, 1991 |
| 5021851 |
NMOS source/drain doping with both P and As |
Jun. 4, 1991 |
| 5019886 |
Semiconductor-based radiation-detector element |
May. 28, 1991 |
| 4987471 |
High-speed dielectrically isolated devices utilizing buried silicide regions |
Jan. 22, 1991 |
| 4982248 |
Gated structure for controlling fluctuations in mesoscopic structures |
Jan. 1, 1991 |
| 4982263 |
Anodizable strain layer for SOI semiconductor structures |
Jan. 1, 1991 |
| 4940671 |
High voltage complementary NPN/PNP process |
Jul. 10, 1990 |
| 4927783 |
Method for fabricating semiconductor device |
May. 22, 1990 |
| 4926230 |
Multiple junction solar power generation cells |
May. 15, 1990 |
| 4903102 |
Semiconductor photoelectric conversion device and method of making the same |
Feb. 20, 1990 |
| 4897123 |
Solar cells and method for producing solar cells |
Jan. 30, 1990 |
| 4896243 |
Efficient ESD input protection scheme |
Jan. 23, 1990 |
| 4896202 |
Short wavelength impurity band conduction detectors |
Jan. 23, 1990 |
| 4878100 |
Triple-implanted drain in transistor made by oxide sidewall-spacer method |
Oct. 31, 1989 |
| 4875944 |
Amorphous photoelectric converting device |
Oct. 24, 1989 |
| 4875085 |
Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus |
Oct. 17, 1989 |
| 4873199 |
Method of making bipolar integrated circuits |
Oct. 10, 1989 |
| 4851360 |
NMOS source/drain doping with both P and As |
Jul. 25, 1989 |
| 4836788 |
Production of solid-state image pick-up device with uniform distribution of dopants |
Jun. 6, 1989 |
| 4835112 |
CMOS salicide process using germanium implantation |
May. 30, 1989 |
| 4825081 |
Light-activated series-connected pin diode switch |
Apr. 25, 1989 |
| 4821091 |
Polysilicon photoconductor for integrated circuits |
Apr. 11, 1989 |
| 4819040 |
Epitaxial CMOS by oxygen implantation |
Apr. 4, 1989 |
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