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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5821584 |
Thin film transistors comprising drain offset regions |
Oct. 13, 1998 |
| 5789802 |
Dopant profile spreading for arsenic source/drain |
Aug. 4, 1998 |
| 5773847 |
Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the other |
Jun. 30, 1998 |
| 5753353 |
Soi Substrate |
May. 19, 1998 |
| 5745517 |
Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD) |
Apr. 28, 1998 |
| 5734195 |
Semiconductor wafer for epitaxially grown devices having a sub-surface getter region |
Mar. 31, 1998 |
| 5731626 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
Mar. 24, 1998 |
| 5668397 |
High frequency analog transistors, method of fabrication and circuit implementation |
Sep. 16, 1997 |
| 5659183 |
Thin film transistor having a drain offset region |
Aug. 19, 1997 |
| 5648673 |
Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
Jul. 15, 1997 |
| 5614733 |
Semiconductor device having crystalline thin film transistors |
Mar. 25, 1997 |
| 5614736 |
Gallium phosphate light emitting diode with zinc-doped contact |
Mar. 25, 1997 |
| 5612548 |
Diamond light-emitting element |
Mar. 18, 1997 |
| 5610415 |
Turn-off semiconductor component having amphoteric properties |
Mar. 11, 1997 |
| 5600167 |
Semiconductor device having low contact resistance |
Feb. 4, 1997 |
| 5598025 |
Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure |
Jan. 28, 1997 |
| 5576572 |
Semiconductor integrated circuit device and method of manufacturing the same |
Nov. 19, 1996 |
| 5574307 |
Semiconductor device and method of producing the same |
Nov. 12, 1996 |
| 5569953 |
Semiconductor device having an isolation region enriched in oxygen |
Oct. 29, 1996 |
| 5557129 |
Semiconductor MOSFET device having a shallow nitrogen implanted channel region |
Sep. 17, 1996 |
| 5548143 |
Metal oxide semiconductor transistor and a method for manufacturing the same |
Aug. 20, 1996 |
| 5543637 |
Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
Aug. 6, 1996 |
| 5532508 |
Semiconductor device with LDD structure |
Jul. 2, 1996 |
| 5514902 |
Semiconductor device having MOS transistor |
May. 7, 1996 |
| 5481121 |
Semiconductor device having improved crystal orientation |
Jan. 2, 1996 |
| 5475252 |
Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
Dec. 12, 1995 |
| 5468974 |
Control and modification of dopant distribution and activation in polysilicon |
Nov. 21, 1995 |
| 5466955 |
Field effect transistor having an improved transistor characteristic |
Nov. 14, 1995 |
| 5466955 |
Field effect transistor having an improved transistor characteristic |
Nov. 14, 1995 |
| 5464991 |
Nonlinear optical materials and their manufacturing method |
Nov. 7, 1995 |
| 5457337 |
Low-noise gain-mode impurity band conduction detector design |
Oct. 10, 1995 |
| 5444284 |
Semiconductor device including polysilicon semiconductor element and MOS-FET as the element thereof |
Aug. 22, 1995 |
| 5426329 |
Semiconductor device with arsenic doped silicon thin film interconnections or electrodes |
Jun. 20, 1995 |
| 5422731 |
Semiconductor arrangement made of compound semiconductor material |
Jun. 6, 1995 |
| 5412244 |
Electrically-programmable low-impedance anti-fuse element |
May. 2, 1995 |
| 5408125 |
Semiconductor process for manufacturing semiconductor device with increased operating voltages |
Apr. 18, 1995 |
| 5399900 |
Isolation region in a group III-V semiconductor device and method of making the same |
Mar. 21, 1995 |
| 5391905 |
Integrated logic circuit |
Feb. 21, 1995 |
| 5389799 |
Semiconductor device |
Feb. 14, 1995 |
| 5389809 |
Silicided MOS transistor |
Feb. 14, 1995 |
| 5387807 |
P-N junction diffusion barrier employing mixed dopants |
Feb. 7, 1995 |
| 5382809 |
Semiconductor device including semiconductor diamond |
Jan. 17, 1995 |
| 5382813 |
Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers |
Jan. 17, 1995 |
| 5382808 |
Metal boride ohmic contact on diamond and method for making same |
Jan. 17, 1995 |
| 5378923 |
Semiconductor device including a field effect transistor |
Jan. 3, 1995 |
| 5371382 |
Amorphous silicon rectifying contact on diamond and method for making same |
Dec. 6, 1994 |
| 5371393 |
EEPROM cell with improved tunneling properties |
Dec. 6, 1994 |
| 5367190 |
Polysilicon semiconductor element having resistivity and work function controlled to required values |
Nov. 22, 1994 |
| 5357130 |
Low-noise cryogenic MOSFET |
Oct. 18, 1994 |
| 5355235 |
Organic field effect element having organic layers with different carrier concentrations |
Oct. 11, 1994 |
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