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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6380036 |
Semiconductor device and method of manufacturing the same |
Apr. 30, 2002 |
| 6376343 |
Reduction of metal silicide/silicon interface roughness by dopant implantation processing |
Apr. 23, 2002 |
| 6337536 |
White color light emitting diode and neutral color light emitting diode |
Jan. 8, 2002 |
| 6326274 |
Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells |
Dec. 4, 2001 |
| 6323520 |
Method for forming channel-region doping profile for semiconductor device |
Nov. 27, 2001 |
| 6285042 |
Active Matry Display |
Sep. 4, 2001 |
| 6281521 |
Silicon carbide horizontal channel buffered gate semiconductor devices |
Aug. 28, 2001 |
| 6274894 |
Low-bandgap source and drain formation for short-channel MOS transistors |
Aug. 14, 2001 |
| 6268640 |
Forming steep lateral doping distribution at source/drain junctions |
Jul. 31, 2001 |
| 6265745 |
Method for producing insulated gate thin film semiconductor device |
Jul. 24, 2001 |
| 6249026 |
MOS Transistor with a buried oxide film containing fluorine |
Jun. 19, 2001 |
| 6229198 |
Non-uniform gate doping for reduced overlap capacitance |
May. 8, 2001 |
| 6221705 |
Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells |
Apr. 24, 2001 |
| 6222251 |
Variable threshold voltage gate electrode for higher performance mosfets |
Apr. 24, 2001 |
| 6222257 |
Etch stop for use in etching of silicon oxide |
Apr. 24, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6180269 |
GaAs single crystal substrate and epitaxial wafer using the same |
Jan. 30, 2001 |
| 6165877 |
Method for establishing shallow junction in semiconductor device to minimize junction capacitance |
Dec. 26, 2000 |
| 6163053 |
Semiconductor device having opposite-polarity region under channel |
Dec. 19, 2000 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6153910 |
Semiconductor device with nitrogen implanted channel region |
Nov. 28, 2000 |
| 6147014 |
Forming of deuterium containing nitride spacers and fabrication of semiconductor devices |
Nov. 14, 2000 |
| 6143632 |
Deuterium doping for hot carrier reliability improvement |
Nov. 7, 2000 |
| 6107643 |
Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof |
Aug. 22, 2000 |
| 6075259 |
Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages |
Jun. 13, 2000 |
| 6072226 |
Field isolation structure formed using ozone oxidation and tapering |
Jun. 6, 2000 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 6064096 |
Semiconductor LDD device having halo impurity regions |
May. 16, 2000 |
| 6043139 |
Process for controlling dopant diffusion in a semiconductor layer |
Mar. 28, 2000 |
| 6028015 |
Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption |
Feb. 22, 2000 |
| 6013943 |
Etch stop for use in etching of silicon oxide |
Jan. 11, 2000 |
| 6013927 |
Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same |
Jan. 11, 2000 |
| 6011810 |
Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers |
Jan. 4, 2000 |
| 6005285 |
Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
Dec. 21, 1999 |
| 5990493 |
Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium |
Nov. 23, 1999 |
| 5985728 |
Silicon on insulator process with recovery of a device layer from an etch stop layer |
Nov. 16, 1999 |
| 5973370 |
Preventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technology |
Oct. 26, 1999 |
| 5969395 |
Integrated circuit memory devices with high and low dopant concentration regions of different diffusivities |
Oct. 19, 1999 |
| 5969407 |
MOSFET device with an amorphized source |
Oct. 19, 1999 |
| 5965932 |
Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron |
Oct. 12, 1999 |
| 5962914 |
Reduced bird's beak field oxidation process using nitrogen implanted into active region |
Oct. 5, 1999 |
| 5962869 |
Semiconductor material and method for forming the same and thin film transistor |
Oct. 5, 1999 |
| 5959333 |
Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor |
Sep. 28, 1999 |
| 5939769 |
Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
Aug. 17, 1999 |
| 5936287 |
Nitrogenated gate structure for improved transistor performance and method for making same |
Aug. 10, 1999 |
| 5874772 |
Semiconductor device |
Feb. 23, 1999 |
| 5872387 |
Deuterium-treated semiconductor devices |
Feb. 16, 1999 |
| 5838058 |
Semiconductor substrate and semiconductor device employing the same |
Nov. 17, 1998 |
| 5825066 |
Control of juction depth and channel length using generated interstitial gradients to oppose dopant diffusion |
Oct. 20, 1998 |
| 5825052 |
Semiconductor light emmitting device |
Oct. 20, 1998 |
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