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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.

Sub-classes under this class:

Class Number Class Name Patents
257/610 Deep level dopant 109
257/609 For compound semiconductor (e.g., deep level dopant) 125
257/608 Switching device based on filling and emptying of deep energy levels 39

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8643078 Semiconductor structure and manufacturing method of the same Feb. 4, 2014
8604529 Apparatus with photodiode region in multiple epitaxial layers Dec. 10, 2013
8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor Nov. 26, 2013
8536627 Carbon implant for workfunction adjustment in replacement gate transistor Sep. 17, 2013
8513664 Thin film transistor, semiconductor device and electronic device Aug. 20, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8492829 Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same Jul. 23, 2013
8492844 Fully depleted SOI device with buried doped layer Jul. 23, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8471364 Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate Jun. 25, 2013
8455981 Doped graphene electronic materials Jun. 4, 2013
8426927 Penetrating implant for forming a semiconductor device Apr. 23, 2013
8405176 Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste Mar. 26, 2013
8368130 Method and device to reduce dark current in image sensors Feb. 5, 2013
8367512 Self-aligned implants to reduce cross-talk of imaging sensors Feb. 5, 2013
8334550 Unipolar diode with low turn-on voltage Dec. 18, 2012
8324631 Silicon carbide semiconductor device and method for manufacturing the same Dec. 4, 2012
8242498 Compound semiconductor substrate, semiconductor device, and processes for producing them Aug. 14, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012
8134224 Radio frequency semiconductor device Mar. 13, 2012
8134159 Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same Mar. 13, 2012
8114783 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device Feb. 14, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8106483 Wafer with improved intrinsic gettering ability Jan. 31, 2012
8093684 Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same Jan. 10, 2012
8080863 Semiconductor device and method of manufacturing the same Dec. 20, 2011
8072043 Semiconductor component Dec. 6, 2011
8053867 Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants Nov. 8, 2011
8043946 Mixture for doping semiconductors Oct. 25, 2011
8039937 Method of forming semiconductor chips, the semiconductor chips so formed and chip-stack package having the same Oct. 18, 2011
8035196 Methods of counter-doping collector regions in bipolar transistors Oct. 11, 2011
8013343 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal Sep. 6, 2011
7999268 Low temperature impurity doping of silicon carbide Aug. 16, 2011
7989923 Bi-directional transient voltage suppression device and forming method thereof Aug. 2, 2011
7982289 Wafer and a method for manufacturing a wafer Jul. 19, 2011
7964484 Semiconductor integrated circuit device with reduced leakage current Jun. 21, 2011
7898062 Epitaxial semiconductor layer and method Mar. 1, 2011
7863609 Compound semiconductor substrate, semiconductor device, and processes for producing them Jan. 4, 2011
7834422 Implanted counted dopant ions Nov. 16, 2010
7834362 SiC crystal semiconductor device Nov. 16, 2010
7820527 Cleave initiation using varying ion implant dose Oct. 26, 2010
7808080 Synergistcally doped potassium niobate Oct. 5, 2010
7804870 Semiconductor optical device and manufacturing method thereof Sep. 28, 2010
7795122 Antimony ion implantation for semiconductor components Sep. 14, 2010
7772094 Implant damage of layer for easy removal and reduced silicon recess Aug. 10, 2010
7759227 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treated by the method Jul. 20, 2010
7759148 Method for manufacturing semiconductor optical device Jul. 20, 2010
7723825 Semiconductor device and method of manufacturing the same May. 25, 2010
7705429 Epitaxial semiconductor layer and method Apr. 27, 2010

1 2 3 4 5 6 7

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