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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7378330 |
Cleaving process to fabricate multilayered substrates using low implantation doses |
May. 27, 2008 |
| 7378325 |
Semiconductor device and manufacturing method thereof |
May. 27, 2008 |
| 7361970 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone |
Apr. 22, 2008 |
| 7344963 |
Method of reducing charging damage to integrated circuits during semiconductor manufacturing |
Mar. 18, 2008 |
| 7345355 |
Complementary junction-narrowing implants for ultra-shallow junctions |
Mar. 18, 2008 |
| 7301221 |
Controlling diffusion in doped semiconductor regions |
Nov. 27, 2007 |
| 7297994 |
Semiconductor device having a retrograde dopant profile in a channel region |
Nov. 20, 2007 |
| 7297617 |
Method for controlling diffusion in semiconductor regions |
Nov. 20, 2007 |
| 7294883 |
Nonvolatile memory cells with buried channel transistors |
Nov. 13, 2007 |
| 7221037 |
Method of manufacturing group III nitride substrate and semiconductor device |
May. 22, 2007 |
| 7202146 |
Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby |
Apr. 10, 2007 |
| 7193294 |
Semiconductor substrate comprising a support substrate which comprises a gettering site |
Mar. 20, 2007 |
| 7187057 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Mar. 6, 2007 |
| 7081664 |
Doped semiconductor powder and preparation thereof |
Jul. 25, 2006 |
| 7045876 |
Amorphizing ion implant method for forming polysilicon emitter bipolar transistor |
May. 16, 2006 |
| 7042163 |
Organic electroluminescence display and method of fabricating the same |
May. 9, 2006 |
| 7038297 |
Semiconductor diffused resistors with optimized temperature dependence |
May. 2, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 7023072 |
Bipolar transistor |
Apr. 4, 2006 |
| 6995452 |
MOSFET device with nanoscale channel and method of manufacturing the same |
Feb. 7, 2006 |
| 6963081 |
Interfacial trap layer to improve carrier injection |
Nov. 8, 2005 |
| 6930362 |
Calcium doped polysilicon gate electrodes |
Aug. 16, 2005 |
| 6911706 |
Forming strained source drain junction field effect transistors |
Jun. 28, 2005 |
| 6888204 |
Semiconductor devices, and methods for same |
May. 3, 2005 |
| 6878579 |
Semiconductor device and method of manufacturing the same |
Apr. 12, 2005 |
| 6815792 |
Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure |
Nov. 9, 2004 |
| 6812523 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
Nov. 2, 2004 |
| 6791106 |
Semiconductor device and method of manufacturing the same |
Sep. 14, 2004 |
| 6727147 |
MOSFET fabrication method |
Apr. 27, 2004 |
| 6680497 |
Interstitial diffusion barrier |
Jan. 20, 2004 |
| 6674151 |
Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects |
Jan. 6, 2004 |
| 6661061 |
Integrated circuit with differing gate oxide thickness |
Dec. 9, 2003 |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
Oct. 28, 2003 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6627973 |
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device |
Sep. 30, 2003 |
| 6620708 |
Method for fabricating a semiconductor device utilizing hemispherical grain silicon and doping to increase capacitance |
Sep. 16, 2003 |
| 6621145 |
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
Sep. 16, 2003 |
| 6621146 |
Method and apparatus for the use of embedded resistance to linearize and improve the matching properties of transistors |
Sep. 16, 2003 |
| 6555896 |
Etch stop for use in etching of silicon oxide |
Apr. 29, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6541821 |
SOI device with source/drain extensions and adjacent shallow pockets |
Apr. 1, 2003 |
| 6538284 |
SOI device with body recombination region, and method |
Mar. 25, 2003 |
| 6509651 |
Substrate-fluorescent LED |
Jan. 21, 2003 |
| 6479866 |
SOI device with self-aligned selective damage implant, and method |
Nov. 12, 2002 |
| 6469348 |
Nonvolatile semiconductor memory device |
Oct. 22, 2002 |
| 6462374 |
Semiconductor device and method for fabricating the same |
Oct. 8, 2002 |
| 6459141 |
Method and apparatus for suppressing the channeling effect in high energy deep well implantation |
Oct. 1, 2002 |
| 6433363 |
Semiconductor device and manufacturing method thereof |
Aug. 13, 2002 |
| 6410991 |
Semiconductor device and method of manufacturing the same |
Jun. 25, 2002 |
| 6400002 |
Methods of forming field effect transistors and related field effect transistor constructions |
Jun. 4, 2002 |
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