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Class Information
Number: 257/607
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified dopant (e.g., plural dopants of same conductivity in same region)
Description: Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.


Sub-classes under this class:

Class Number Class Name Patents
257/610 Deep level dopant 93
257/609 For compound semiconductor (e.g., deep level dopant) 104
257/608 Switching device based on filling and emptying of deep energy levels 31


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
7608908 Robust deep trench isolation Oct. 27, 2009
7566585 Semiconductor component and method for production of a semiconductor component Jul. 28, 2009
7553721 Flash memory devices and methods of fabricating the same Jun. 30, 2009
7528049 Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby May. 5, 2009
7514763 Semiconductor device and manufacturing method for the same Apr. 7, 2009
7501644 Apparatus and method for controlled particle beam manufacturing Mar. 10, 2009
7495245 Apparatus and method for controlled particle beam manufacturing Feb. 24, 2009
7489019 Epitaxial semiconductor layer and method Feb. 10, 2009
7378330 Cleaving process to fabricate multilayered substrates using low implantation doses May. 27, 2008
7378325 Semiconductor device and manufacturing method thereof May. 27, 2008
7361970 Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone Apr. 22, 2008
7345355 Complementary junction-narrowing implants for ultra-shallow junctions Mar. 18, 2008
7344963 Method of reducing charging damage to integrated circuits during semiconductor manufacturing Mar. 18, 2008
7301221 Controlling diffusion in doped semiconductor regions Nov. 27, 2007
7297617 Method for controlling diffusion in semiconductor regions Nov. 20, 2007
7297994 Semiconductor device having a retrograde dopant profile in a channel region Nov. 20, 2007
7294883 Nonvolatile memory cells with buried channel transistors Nov. 13, 2007
7221037 Method of manufacturing group III nitride substrate and semiconductor device May. 22, 2007
7202146 Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby Apr. 10, 2007
7193294 Semiconductor substrate comprising a support substrate which comprises a gettering site Mar. 20, 2007
7187057 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Mar. 6, 2007
7081664 Doped semiconductor powder and preparation thereof Jul. 25, 2006
7045876 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor May. 16, 2006
7042163 Organic electroluminescence display and method of fabricating the same May. 9, 2006
7038297 Semiconductor diffused resistors with optimized temperature dependence May. 2, 2006
7030464 Semiconductor device and method of manufacturing the same Apr. 18, 2006
7023072 Bipolar transistor Apr. 4, 2006
6995452 MOSFET device with nanoscale channel and method of manufacturing the same Feb. 7, 2006
6963081 Interfacial trap layer to improve carrier injection Nov. 8, 2005
6930362 Calcium doped polysilicon gate electrodes Aug. 16, 2005
6911706 Forming strained source drain junction field effect transistors Jun. 28, 2005
6888204 Semiconductor devices, and methods for same May. 3, 2005
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6815792 Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure Nov. 9, 2004
6812523 Semiconductor wafer with ultra thin doping level formed by defect engineering Nov. 2, 2004
6791106 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6727147 MOSFET fabrication method Apr. 27, 2004
6680497 Interstitial diffusion barrier Jan. 20, 2004
6674151 Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects Jan. 6, 2004
6661061 Integrated circuit with differing gate oxide thickness Dec. 9, 2003
6639327 Semiconductor member, semiconductor device and manufacturing methods thereof Oct. 28, 2003
6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Oct. 21, 2003
6627973 Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device Sep. 30, 2003
6621146 Method and apparatus for the use of embedded resistance to linearize and improve the matching properties of transistors Sep. 16, 2003
6620708 Method for fabricating a semiconductor device utilizing hemispherical grain silicon and doping to increase capacitance Sep. 16, 2003
6621145 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance Sep. 16, 2003
6555896 Etch stop for use in etching of silicon oxide Apr. 29, 2003
6552414 Semiconductor device with selectively diffused regions Apr. 22, 2003
6541821 SOI device with source/drain extensions and adjacent shallow pockets Apr. 1, 2003
6538284 SOI device with body recombination region, and method Mar. 25, 2003

1 2 3 4 5 6


 
 
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