| |
 |
|
Class Information
Number: 257/606
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) > With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage) > Subsurface breakdown
Description: Subject matter wherein the voltage breakdown occurs below the surface of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7361942 |
Transient voltage suppression device |
Apr. 22, 2008 |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6936907 |
Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity |
Aug. 30, 2005 |
| 6867436 |
Transient voltage suppression device |
Mar. 15, 2005 |
| 6815799 |
Semiconductor integrated circuit device |
Nov. 9, 2004 |
| 6803644 |
Semiconductor integrated circuit device and method of manufacturing the same |
Oct. 12, 2004 |
| 6784520 |
Semiconductor devices constitute constant voltage devices used to raise internal voltage |
Aug. 31, 2004 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6730979 |
Recessed p-type region cap layer avalanche photodiode |
May. 4, 2004 |
| 6706606 |
Buried zener diode structure and method of manufacture |
Mar. 16, 2004 |
| 6639301 |
Semiconductor device and manufacturing method thereof |
Oct. 28, 2003 |
| 6605859 |
Buried Zener diode structure and method of manufacture |
Aug. 12, 2003 |
| 6590273 |
Semiconductor integrated circuit device and manufacturing method thereof |
Jul. 8, 2003 |
| 6552413 |
Diode |
Apr. 22, 2003 |
| 6531744 |
Integrated circuit provided with overvoltage protection and method for manufacture thereof |
Mar. 11, 2003 |
| 6495863 |
Semiconductor device having diode for input protection circuit of MOS structure device |
Dec. 17, 2002 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6075276 |
ESD protection device using Zener diodes |
Jun. 13, 2000 |
| 6051457 |
Method for fabricating electrostatic discharge protection device |
Apr. 18, 2000 |
| 5986327 |
Bipolar type diode |
Nov. 16, 1999 |
| 5883414 |
Electrostatic discharge protection device |
Mar. 16, 1999 |
| 5869882 |
Zener diode structure with high reverse breakdown voltage |
Feb. 9, 1999 |
| 5834823 |
Transistor with constant voltage diode |
Nov. 10, 1998 |
| 5757057 |
Large area avalanche photodiode array |
May. 26, 1998 |
| 5691558 |
Drift-free avalanche breakdown diode |
Nov. 25, 1997 |
| 5612568 |
Low-noise zener diode |
Mar. 18, 1997 |
| 5608244 |
Semiconductor diode with reduced recovery current |
Mar. 4, 1997 |
| 5594266 |
Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
Jan. 14, 1997 |
| 5554882 |
Integrated trigger injector for avalanche semiconductor switch devices |
Sep. 10, 1996 |
| 5477078 |
Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
Dec. 19, 1995 |
| 5468673 |
Avalanche diode incorporated in a bipolar integrated circuit |
Nov. 21, 1995 |
| 5414295 |
Avalance diode incorporated in a bipolar integrated circuit |
May. 9, 1995 |
| 5336924 |
Zener diode having a reference diode and a protective diode |
Aug. 9, 1994 |
| 5298788 |
Avalanche diode in a bipolar integrated circuit |
Mar. 29, 1994 |
| 5241213 |
Buried zener diode having auxiliary zener junction access path |
Aug. 31, 1993 |
| 5233214 |
Controllable, temperature-compensated voltage limiter |
Aug. 3, 1993 |
| 5150176 |
PN junction surge suppressor structure with moat |
Sep. 22, 1992 |
| 5146297 |
Precision voltage reference with lattice damage |
Sep. 8, 1992 |
| 5089427 |
Semiconductor device and method |
Feb. 18, 1992 |
| 4999683 |
Avalanche breakdown semiconductor device |
Mar. 12, 1991 |
| 4965643 |
Schottky diode for integrated circuits |
Oct. 23, 1990 |
| 4886762 |
Monolithic temperature compensated voltage-reference diode and method for its manufacture |
Dec. 12, 1989 |
| 4870467 |
Monolithic temperature compensated voltage-reference diode and method of its manufacture |
Sep. 26, 1989 |
| 4775643 |
Mesa zener diode and method of manufacture thereof |
Oct. 4, 1988 |
| 4771011 |
Ion-implanted process for forming IC wafer with buried-Zener diode and IC structure made with such process |
Sep. 13, 1988 |
| 4742021 |
Subsurface zener diode and method of making |
May. 3, 1988 |
| 4732866 |
Method for producing low noise, high grade constant semiconductor junctions |
Mar. 22, 1988 |
| 4677369 |
CMOS temperature insensitive voltage reference |
Jun. 30, 1987 |
| 4672403 |
Lateral subsurface zener diode |
Jun. 9, 1987 |
| 4646114 |
Integrated circuit Zener diode |
Feb. 24, 1987 |
|
|
|
