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Class Information
Number: 257/605
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) > With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage)
Description: Subject matter in which the avalanche diode device is provided with means to limit the area of the device in which electrical breakdown occurs (e.g., a guard ring having a higher breakdown voltage than the area it surrounds).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7408206 |
Method and structure for charge dissipation in integrated circuits |
Aug. 5, 2008 |
| 7391093 |
Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film |
Jun. 24, 2008 |
| 7361942 |
Transient voltage suppression device |
Apr. 22, 2008 |
| 7279773 |
Protection device for handling energy transients |
Oct. 9, 2007 |
| 7135718 |
Diode device and transistor device |
Nov. 14, 2006 |
| 6940131 |
MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication |
Sep. 6, 2005 |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6936907 |
Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity |
Aug. 30, 2005 |
| 6933546 |
Semiconductor component |
Aug. 23, 2005 |
| 6838771 |
Semiconductor device having conductor layers stacked on a substrate |
Jan. 4, 2005 |
| 6803644 |
Semiconductor integrated circuit device and method of manufacturing the same |
Oct. 12, 2004 |
| 6784520 |
Semiconductor devices constitute constant voltage devices used to raise internal voltage |
Aug. 31, 2004 |
| 6747294 |
Guard ring structure for reducing crosstalk and latch-up in integrated circuits |
Jun. 8, 2004 |
| 6734520 |
Semiconductor component and method of producing it |
May. 11, 2004 |
| 6717229 |
Distributed reverse surge guard |
Apr. 6, 2004 |
| 6707128 |
Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode |
Mar. 16, 2004 |
| 6670685 |
Method of manufacturing and structure of semiconductor device with floating ring structure |
Dec. 30, 2003 |
| 6639301 |
Semiconductor device and manufacturing method thereof |
Oct. 28, 2003 |
| 6552413 |
Diode |
Apr. 22, 2003 |
| 6531744 |
Integrated circuit provided with overvoltage protection and method for manufacture thereof |
Mar. 11, 2003 |
| 6455910 |
Cross guard-ring structure to protect the chip crack in low dielectric constant and copper process |
Sep. 24, 2002 |
| 6426511 |
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same |
Jul. 30, 2002 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6388308 |
Semiconductor device and method for driving the same |
May. 14, 2002 |
| 6274918 |
Integrated circuit diode, and method for fabricating same |
Aug. 14, 2001 |
| 6268640 |
Forming steep lateral doping distribution at source/drain junctions |
Jul. 31, 2001 |
| 6232642 |
Semiconductor device having impurity region locally at an end of channel formation region |
May. 15, 2001 |
| 6191466 |
Semiconductor device containing a diode |
Feb. 20, 2001 |
| 6127709 |
Guard ring structure for semiconductor devices and process for manufacture thereof |
Oct. 3, 2000 |
| 6040617 |
Structure to provide junction breakdown stability for deep trench devices |
Mar. 21, 2000 |
| 5994754 |
Semiconductor device |
Nov. 30, 1999 |
| 5986315 |
Guard wall to reduce delamination effects within a semiconductor die |
Nov. 16, 1999 |
| 5959345 |
Edge termination for zener-clamped power device |
Sep. 28, 1999 |
| 5955766 |
Diode with controlled breakdown |
Sep. 21, 1999 |
| 5869882 |
Zener diode structure with high reverse breakdown voltage |
Feb. 9, 1999 |
| 5866936 |
Mesa-structure avalanche photodiode having a buried epitaxial junction |
Feb. 2, 1999 |
| 5760417 |
Semiconductor electron emission device |
Jun. 2, 1998 |
| 5757057 |
Large area avalanche photodiode array |
May. 26, 1998 |
| 5691558 |
Drift-free avalanche breakdown diode |
Nov. 25, 1997 |
| 5691554 |
Protection circuit |
Nov. 25, 1997 |
| 5652459 |
Moisture guard ring for integrated circuit applications |
Jul. 29, 1997 |
| 5614752 |
Semiconductor device containing external surge protection component |
Mar. 25, 1997 |
| 5612568 |
Low-noise zener diode |
Mar. 18, 1997 |
| 5608244 |
Semiconductor diode with reduced recovery current |
Mar. 4, 1997 |
| 5554882 |
Integrated trigger injector for avalanche semiconductor switch devices |
Sep. 10, 1996 |
| 5548152 |
Semiconductor device with parallel-connected diodes |
Aug. 20, 1996 |
| 5541140 |
Semiconductor arrangement and method for its manufacture |
Jul. 30, 1996 |
| 5519245 |
Insulated gate bipolar transistor with reverse conducting current |
May. 21, 1996 |
| 5468673 |
Avalanche diode incorporated in a bipolar integrated circuit |
Nov. 21, 1995 |
| 5414295 |
Avalance diode incorporated in a bipolar integrated circuit |
May. 9, 1995 |
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