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Class Information
Number: 257/604
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) > Microwave transit time device (e.g., impatt diode)
Description: Subject matter wherein the device is structured to operate as a transit time device at microwave frequencies, the frequency at which it operates being determined by the transit time of charge carriers through the depletion region which extends on both sides of the reverse biased junction (e.g., an Imp
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6909163 |
High-frequency oscillator for an integrated semiconductor circuit and the use thereof |
Jun. 21, 2005 |
| 6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling |
Feb. 15, 2005 |
| 6774460 |
IMPATT diodes |
Aug. 10, 2004 |
| 6762494 |
Electronic package substrate with an upper dielectric layer covering high speed signal traces |
Jul. 13, 2004 |
| 6759744 |
Electronic circuit unit suitable for miniaturization |
Jul. 6, 2004 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6686647 |
Gunn diode and method of manufacturing the same |
Feb. 3, 2004 |
| 6653668 |
Radio frequency modules and modules for moving target detection |
Nov. 25, 2003 |
| 6605859 |
Buried Zener diode structure and method of manufacture |
Aug. 12, 2003 |
| 6552413 |
Diode |
Apr. 22, 2003 |
| 6531744 |
Integrated circuit provided with overvoltage protection and method for manufacture thereof |
Mar. 11, 2003 |
| 6495863 |
Semiconductor device having diode for input protection circuit of MOS structure device |
Dec. 17, 2002 |
| 6380623 |
Microcircuit assembly having dual-path grounding and negative self-bias |
Apr. 30, 2002 |
| 6366770 |
High-frequency semiconductor device and radio transmitter/receiver device |
Apr. 2, 2002 |
| 6252250 |
High power impatt diode |
Jun. 26, 2001 |
| 6057593 |
Hybrid high-power microwave-frequency integrated circuit |
May. 2, 2000 |
| 6040617 |
Structure to provide junction breakdown stability for deep trench devices |
Mar. 21, 2000 |
| 6023080 |
Input/output connection structure of a semiconductor device |
Feb. 8, 2000 |
| 6002147 |
Hybrid microwave-frequency integrated circuit |
Dec. 14, 1999 |
| 5986331 |
Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate |
Nov. 16, 1999 |
| 5977611 |
Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode |
Nov. 2, 1999 |
| 5917227 |
Light-emitting-diode array and light-emitting-diode element |
Jun. 29, 1999 |
| 5512776 |
Interdigitated IMPATT devices |
Apr. 30, 1996 |
| 5466965 |
High efficiency, high power multiquantum well IMPATT device with optical injection locking |
Nov. 14, 1995 |
| 5449953 |
Monolithic microwave integrated circuit on high resistivity silicon |
Sep. 12, 1995 |
| 5436499 |
High performance gaas devices and method |
Jul. 25, 1995 |
| 5373186 |
Bipolar transistor with monoatomic base layer between emitter and collector layers |
Dec. 13, 1994 |
| 5329150 |
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers |
Jul. 12, 1994 |
| 5276350 |
Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
Jan. 4, 1994 |
| 5243199 |
High frequency device |
Sep. 7, 1993 |
| 5216260 |
Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers |
Jun. 1, 1993 |
| 5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms |
Oct. 22, 1991 |
| 4954864 |
Millimeter-wave monolithic diode-grid frequency multiplier |
Sep. 4, 1990 |
| 4882609 |
Semiconductor devices with at least one monoatomic layer of doping atoms |
Nov. 21, 1989 |
| 4872039 |
Buried lateral diode and method for making same |
Oct. 3, 1989 |
| 4866488 |
Ballistic transport filter and device |
Sep. 12, 1989 |
| 4857972 |
Impatt diode |
Aug. 15, 1989 |
| 4835495 |
Diode device packaging arrangement |
May. 30, 1989 |
| 4706041 |
Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof |
Nov. 10, 1987 |
| 4673958 |
Monolithic microwave diodes |
Jun. 16, 1987 |
| 4661834 |
Semiconductor structures and manufacturing methods |
Apr. 28, 1987 |
| 4617532 |
Optically stabilized semiconductor microwave diodes |
Oct. 14, 1986 |
| 4596070 |
Interdigitated IMPATT devices |
Jun. 24, 1986 |
| 4596069 |
Three dimensional processing for monolithic IMPATTs |
Jun. 24, 1986 |
| 4568889 |
Distributed diode VCO with stripline coupled output and distributed variable capacitor control |
Feb. 4, 1986 |
| 4525732 |
Distributed IMPATT structure |
Jun. 25, 1985 |
| 4291320 |
Heterojunction IMPATT diode |
Sep. 22, 1981 |
| 4286276 |
Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness |
Aug. 25, 1981 |
| 4231058 |
Tungsten-titanium-chromium/gold semiconductor metallization |
Oct. 28, 1980 |
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