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Class Information
Number: 257/604
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) > Microwave transit time device (e.g., impatt diode)
Description: Subject matter wherein the device is structured to operate as a transit time device at microwave frequencies, the frequency at which it operates being determined by the transit time of charge carriers through the depletion region which extends on both sides of the reverse biased junction (e.g., an Imp










Patents under this class:
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Patent Number Title Of Patent Date Issued
8492866 Isolated Zener diode Jul. 23, 2013
8217416 Light emitting device package and method for fabricating the same Jul. 10, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
7781786 Semiconductor device having a heterojunction diode and manufacturing method thereof Aug. 24, 2010
7638857 Structure of silicon controlled rectifier Dec. 29, 2009
7538367 Avalanche photodiode May. 26, 2009
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes Mar. 31, 2009
6936868 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same Aug. 30, 2005
6909163 High-frequency oscillator for an integrated semiconductor circuit and the use thereof Jun. 21, 2005
6855587 Gate-controlled, negative resistance diode device using band-to-band tunneling Feb. 15, 2005
6774460 IMPATT diodes Aug. 10, 2004
6762494 Electronic package substrate with an upper dielectric layer covering high speed signal traces Jul. 13, 2004
6759744 Electronic circuit unit suitable for miniaturization Jul. 6, 2004
6734515 Semiconductor light receiving element May. 11, 2004
6686647 Gunn diode and method of manufacturing the same Feb. 3, 2004
6653668 Radio frequency modules and modules for moving target detection Nov. 25, 2003
6605859 Buried Zener diode structure and method of manufacture Aug. 12, 2003
6552413 Diode Apr. 22, 2003
6531744 Integrated circuit provided with overvoltage protection and method for manufacture thereof Mar. 11, 2003
6495863 Semiconductor device having diode for input protection circuit of MOS structure device Dec. 17, 2002
6380623 Microcircuit assembly having dual-path grounding and negative self-bias Apr. 30, 2002
6366770 High-frequency semiconductor device and radio transmitter/receiver device Apr. 2, 2002
6252250 High power impatt diode Jun. 26, 2001
6057593 Hybrid high-power microwave-frequency integrated circuit May. 2, 2000
6040617 Structure to provide junction breakdown stability for deep trench devices Mar. 21, 2000
6023080 Input/output connection structure of a semiconductor device Feb. 8, 2000
6002147 Hybrid microwave-frequency integrated circuit Dec. 14, 1999
5986331 Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate Nov. 16, 1999
5977611 Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode Nov. 2, 1999
5917227 Light-emitting-diode array and light-emitting-diode element Jun. 29, 1999
5512776 Interdigitated IMPATT devices Apr. 30, 1996
5466965 High efficiency, high power multiquantum well IMPATT device with optical injection locking Nov. 14, 1995
5449953 Monolithic microwave integrated circuit on high resistivity silicon Sep. 12, 1995
5436499 High performance gaas devices and method Jul. 25, 1995
5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers Dec. 13, 1994
5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers Jul. 12, 1994
5276350 Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits Jan. 4, 1994
5243199 High frequency device Sep. 7, 1993
5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers Jun. 1, 1993
5060234 Injection laser with at least one pair of monoatomic layers of doping atoms Oct. 22, 1991
4954864 Millimeter-wave monolithic diode-grid frequency multiplier Sep. 4, 1990
4882609 Semiconductor devices with at least one monoatomic layer of doping atoms Nov. 21, 1989
4872039 Buried lateral diode and method for making same Oct. 3, 1989
4866488 Ballistic transport filter and device Sep. 12, 1989
4857972 Impatt diode Aug. 15, 1989
4835495 Diode device packaging arrangement May. 30, 1989
4706041 Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof Nov. 10, 1987
4673958 Monolithic microwave diodes Jun. 16, 1987
4661834 Semiconductor structures and manufacturing methods Apr. 28, 1987
4617532 Optically stabilized semiconductor microwave diodes Oct. 14, 1986

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