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Class Information
Number: 257/6
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Intervalley transfer (e.g., gunn effect)
Description: Subject matter wherein electrons under the influence of sufficiently high electric fields are transferred between energy minima having different momentum in the conduction band of the active semiconductor material, or holes under the influence of sufficiently high electric fields are transferred between energy minima having different momentum in the valence band of the active semiconductor material.










Sub-classes under this class:

Class Number Class Name Patents
257/7 In monolithic integrated circuit 36
257/8 Three or more terminal device 43


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
8207503 X-ray detector usable at microwave frequencies Jun. 26, 2012
7898047 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices Mar. 1, 2011
7488968 Multilevel phase change memory Feb. 10, 2009
7411304 Semiconductor interconnect having conductive spring contacts Aug. 12, 2008
7326953 Layer sequence for Gunn diode Feb. 5, 2008
7294518 Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same Nov. 13, 2007
7241652 Method for fabricating organic thin film transistor Jul. 10, 2007
7211516 Nickel silicide including indium and a method of manufacture therefor May. 1, 2007
7148543 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Dec. 12, 2006
7005215 Mask repair using multiple exposures Feb. 28, 2006
6969867 Field effect chalcogenide devices Nov. 29, 2005
6873004 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof Mar. 29, 2005
6815786 Semiconductor optical device and method of manufacturing the same Nov. 9, 2004
6690026 Method of fabricating a three-dimensional array of active media Feb. 10, 2004
6686647 Gunn diode and method of manufacturing the same Feb. 3, 2004
6518589 Dual mode FET & logic circuit having negative differential resistance mode Feb. 11, 2003
6426511 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same Jul. 30, 2002
6369663 NRD guide Gunn oscillator Apr. 9, 2002
6344658 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same Feb. 5, 2002
6111265 Gunn diode having a graded aluminum gallium arsenide active layer and Gunn diode oscillator Aug. 29, 2000
6077760 Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics Jun. 20, 2000
6048777 Fabrication of high power semiconductor devices with respective heat sinks for integration with planar microstrip circuitry Apr. 11, 2000
5675157 Transferred electron effect device Oct. 7, 1997
5440166 Planarized isolation structure for CMOS devices Aug. 8, 1995
5347141 Multiterminal lateral S-shaped negative differential conductance device Sep. 13, 1994
5336901 Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure Aug. 9, 1994
5329257 SiGe transferred electron device and oscillator using same Jul. 12, 1994
5311034 Indium phosphide Gunn diode with dopant gradient May. 10, 1994
5258624 Transferred electron effect device Nov. 2, 1993
5250815 Hot electron injector Gunn device with anode heat sink Oct. 5, 1993
5151758 Planar-doped valley field effect transistor (PDVFET) Sep. 29, 1992
5049971 Monolithic high-frequency-signal switch and power limiter device Sep. 17, 1991
4924114 Temperature sensor May. 8, 1990
4914489 Constant current semiconductor device Apr. 3, 1990
4894691 Compound semiconductor device with superlattice channel region Jan. 16, 1990
4879581 Transferred electron device with periodic ballistic regions Nov. 7, 1989
4801982 Electronic devices Jan. 31, 1989
4751423 Photocathode having a low dark current Jun. 14, 1988
4649405 Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices Mar. 10, 1987
4625182 Optically triggered bulk device Gunn oscillator Nov. 25, 1986
4604637 Light-emitting diode suitable as a pressure sensor Aug. 5, 1986
4539581 Planar doped barrier transferred electron oscillator Sep. 3, 1985
4417261 Transferred electron devices Nov. 22, 1983
4257055 Negative resistance heterojunction devices Mar. 17, 1981
4238763 Solid state microwave devices with small active contact and large passive contact Dec. 9, 1980
4212020 Solid state electro-optical devices on a semi-insulating substrate Jul. 8, 1980
4182964 Negative resistance element circuit combinations Jan. 8, 1980
4134122 Hyperfrequency device with gunn effect Jan. 9, 1979
4006490 Cathode for gunn diode and gunn diode comprising such a cathode Feb. 1, 1977

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