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Class Information
Number: 257/597
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Voltage variable capacitance device > With specified dopant profile > Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)
Description: Subject matter wherein the device contains a rectifying junction and wherein the variable dopant concentration decreases with distance from the rectifying junction.










Patents under this class:

Patent Number Title Of Patent Date Issued
8114783 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device Feb. 14, 2012
8022507 Varactor diodes Sep. 20, 2011
7952131 Lateral junction varactor with large tuning range May. 31, 2011
7923818 Varactor element and low distortion varactor circuit arrangement Apr. 12, 2011
7821103 Counter-doped varactor structure and method Oct. 26, 2010
7696604 Silicon germanium heterostructure barrier varactor Apr. 13, 2010
7126195 Method for forming a metallization layer Oct. 24, 2006
7023038 Silicon barrier capacitor device structure Apr. 4, 2006
6882029 Junction varactor with high Q factor and wide tuning range Apr. 19, 2005
6787882 Semiconductor varactor diode with doped heterojunction Sep. 7, 2004
5789801 Varactor with electrostatic barrier Aug. 4, 1998
5629544 Semiconductor diode with silicide films and trench isolation May. 13, 1997
5506442 Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device Apr. 9, 1996
5338966 Variable capacitance diode device Aug. 16, 1994
4987459 Variable capacitance diode element having wide capacitance variation range Jan. 22, 1991
4954850 Variable-capacitance diode device Sep. 4, 1990
4475117 Linear pn junction capacitance diode Oct. 2, 1984
4438445 Variable capacitance diode and method of making the same Mar. 20, 1984
4250514 Capacitance diode with particular doping profile Feb. 10, 1981
4226648 Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy Oct. 7, 1980
4106953 Method of producing an ion implanted tuning diode Aug. 15, 1978











 
 
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