| |
 |
|
Class Information
Number: 257/593
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With means to increase current gain or operating frequency
Description: Subject matter wherein the device includes means to increase the current gain or the operating frequency of the devices.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456071 |
Method for forming a strongly-conductive buried layer in a semiconductor substrate |
Nov. 25, 2008 |
| 7446012 |
Lateral PNP transistor and the method of manufacturing the same |
Nov. 4, 2008 |
| 7405422 |
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD |
Jul. 29, 2008 |
| 7397108 |
Bipolar transistor |
Jul. 8, 2008 |
| 7394113 |
Self-alignment scheme for a heterojunction bipolar transistor |
Jul. 1, 2008 |
| 7297991 |
Bipolar junction transistor and fabricating method |
Nov. 20, 2007 |
| 7262484 |
Structure and method for performance improvement in vertical bipolar transistors |
Aug. 28, 2007 |
| 7211516 |
Nickel silicide including indium and a method of manufacture therefor |
May. 1, 2007 |
| 7199447 |
Angled implant to improve high current operation of bipolar transistors |
Apr. 3, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7141865 |
Low noise semiconductor amplifier |
Nov. 28, 2006 |
| 7126171 |
Bipolar transistor |
Oct. 24, 2006 |
| 7045836 |
Semiconductor structure having a strained region and a method of fabricating same |
May. 16, 2006 |
| 6984593 |
Beta control using a rapid thermal oxidation |
Jan. 10, 2006 |
| 6979885 |
Devices with patterned wells and method for forming same |
Dec. 27, 2005 |
| 6949799 |
Semiconductor structure comprising an electrostatic discharge (ESD) protection device |
Sep. 27, 2005 |
| 6930373 |
Circuit arrangement |
Aug. 16, 2005 |
| 6903440 |
Electronic component of a high frequency current suppression type and bonding wire for the same |
Jun. 7, 2005 |
| 6897547 |
Semiconductor device including bipolar junction transistor, and production method therefor |
May. 24, 2005 |
| 6891249 |
Method and system for high density integrated bipolar power transistor using buried power buss |
May. 10, 2005 |
| 6891250 |
Semiconductor device with bipolar transistor |
May. 10, 2005 |
| 6881988 |
Heterojunction bipolar transistor and semiconductor integrated circuit device using the same |
Apr. 19, 2005 |
| 6867477 |
High gain bipolar transistor |
Mar. 15, 2005 |
| 6838350 |
Triply implanted complementary bipolar transistors |
Jan. 4, 2005 |
| 6815801 |
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer |
Nov. 9, 2004 |
| 6809396 |
Integrated circuit with a high speed narrow base width vertical PNP transistor |
Oct. 26, 2004 |
| 6806555 |
Semiconductor component and method for fabricating it |
Oct. 19, 2004 |
| 6787879 |
Interfacial oxide in a transistor |
Sep. 7, 2004 |
| 6780710 |
Method of manufacturing non-volatile read only memory |
Aug. 24, 2004 |
| 6777780 |
Trench bipolar transistor |
Aug. 17, 2004 |
| 6770953 |
Bipolar transistor |
Aug. 3, 2004 |
| 6764918 |
Structure and method of making a high performance semiconductor device having a narrow doping profile |
Jul. 20, 2004 |
| 6759694 |
Semiconductor phototransistor |
Jul. 6, 2004 |
| 6759674 |
Band gap compensated HBT |
Jul. 6, 2004 |
| 6743662 |
Silicon-on-insulator wafer for RF integrated circuit |
Jun. 1, 2004 |
| 6740914 |
FET circuit block with reduced self-heating |
May. 25, 2004 |
| 6734476 |
Semiconductor devices having group III-V compound layers |
May. 11, 2004 |
| 6699741 |
Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region |
Mar. 2, 2004 |
| 6674150 |
Heterojunction bipolar transistor and method for fabricating the same |
Jan. 6, 2004 |
| 6674148 |
Lateral components in power semiconductor devices |
Jan. 6, 2004 |
| 6657262 |
Monolithically integrated electronic device and fabrication process therefor |
Dec. 2, 2003 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6657279 |
PNP lateral bipolar electronic device and corresponding manufacturing process |
Dec. 2, 2003 |
| 6653708 |
Complementary metal oxide semiconductor with improved single event performance |
Nov. 25, 2003 |
| 6627972 |
Vertical bipolar transistor |
Sep. 30, 2003 |
| 6586782 |
Transistor layout having a heat dissipative emitter |
Jul. 1, 2003 |
| 6579773 |
Transistor device and fabrication method thereof |
Jun. 17, 2003 |
| 6573539 |
Heterojunction bipolar transistor with silicon-germanium base |
Jun. 3, 2003 |
| 6570242 |
Bipolar transistor with high breakdown voltage collector |
May. 27, 2003 |
| 6563147 |
HBT with a SiGe base region having a predetermined Ge content profile |
May. 13, 2003 |
|
|
|
