| |
 |
|
Class Information
Number: 257/592
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))
Description: Subject matter wherein the device has a base region with a cross section that has a specified impurity dopant concentration across it or has a particular geometric configuration.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7446376 |
IGBT cathode design with improved safe operating area capability |
Nov. 4, 2008 |
| 7446012 |
Lateral PNP transistor and the method of manufacturing the same |
Nov. 4, 2008 |
| 7439608 |
Symmetric bipolar junction transistor design for deep sub-micron fabrication processes |
Oct. 21, 2008 |
| 7378325 |
Semiconductor device and manufacturing method thereof |
May. 27, 2008 |
| 7375410 |
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
May. 20, 2008 |
| 7342293 |
Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Mar. 11, 2008 |
| 7327012 |
Bipolar Transistor Devices |
Feb. 5, 2008 |
| 7291898 |
Selective and non-selective epitaxy for base integration in a BiCMOS process and related structure |
Nov. 6, 2007 |
| 7288829 |
Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide |
Oct. 30, 2007 |
| 7285830 |
Lateral bipolar junction transistor in CMOS flow |
Oct. 23, 2007 |
| 7268412 |
Double polysilicon bipolar transistor |
Sep. 11, 2007 |
| 7262483 |
Semiconductor device and method for manufacturing the same |
Aug. 28, 2007 |
| 7253498 |
Bipolar transistor with geometry optimized for device performance, and method of making same |
Aug. 7, 2007 |
| 7247925 |
Semiconductor device and method for fabricating the same |
Jul. 24, 2007 |
| 7247926 |
High-frequency switching transistor |
Jul. 24, 2007 |
| 7235861 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
Jun. 26, 2007 |
| 7183627 |
Independent control of polycrystalline silicon-germanium in an HBT and related structure |
Feb. 27, 2007 |
| 7180159 |
Bipolar transistor having base over buried insulating and polycrystalline regions |
Feb. 20, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7173316 |
Semiconductor device |
Feb. 6, 2007 |
| 7170113 |
Semiconductor device and method of manufacturing the same |
Jan. 30, 2007 |
| 7164174 |
Single poly-emitter PNP using dwell diffusion in a BiCMOS technology |
Jan. 16, 2007 |
| 7141865 |
Low noise semiconductor amplifier |
Nov. 28, 2006 |
| 7135757 |
Bipolar transistor |
Nov. 14, 2006 |
| 7119416 |
Bipolar transistor structure with self-aligned raised extrinsic base and methods |
Oct. 10, 2006 |
| 7115965 |
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation |
Oct. 3, 2006 |
| 7102205 |
Bipolar transistor with extrinsic stress layer |
Sep. 5, 2006 |
| 7091100 |
Polysilicon bipolar transistor and method of manufacturing it |
Aug. 15, 2006 |
| 7084484 |
Semiconductor integrated circuit |
Aug. 1, 2006 |
| 7064361 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
Jun. 20, 2006 |
| 7061118 |
Semiconductor device, stacked semiconductor device, methods of manufacturing the same, circuit board, and electronic instrument |
Jun. 13, 2006 |
| 7038298 |
High f.sub.T and f.sub.max bipolar transistor and method of making same |
May. 2, 2006 |
| 7019383 |
Gallium arsenide HBT having increased performance and method for its fabrication |
Mar. 28, 2006 |
| 7009225 |
Heterojunction bipolar transistor with a base layer that contains bismuth |
Mar. 7, 2006 |
| 6998699 |
Redundant interconnect high current bipolar device and method of forming the device |
Feb. 14, 2006 |
| 6995068 |
Double-implant high performance varactor and method for manufacturing same |
Feb. 7, 2006 |
| 6989581 |
Wide band gap bipolar transistor with reduced thermal runaway |
Jan. 24, 2006 |
| 6984872 |
Method for fabricating an NPN transistor in a BICMOS technology |
Jan. 10, 2006 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6979885 |
Devices with patterned wells and method for forming same |
Dec. 27, 2005 |
| 6977398 |
C implants for improved SiGe bipolar yield |
Dec. 20, 2005 |
| 6974977 |
Heterojunction bipolar transistor |
Dec. 13, 2005 |
| 6972441 |
Silicon germanium heterojunction bipolar transistor with step-up carbon profile |
Dec. 6, 2005 |
| 6967144 |
Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base |
Nov. 22, 2005 |
| 6960820 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 1, 2005 |
| 6939772 |
Bipolar transistor and fabrication method thereof |
Sep. 6, 2005 |
| 6936871 |
Heterojunction bipolar transistor with a base layer that contains bismuth |
Aug. 30, 2005 |
| 6933588 |
High performance SCR-like BJT ESD protection structure |
Aug. 23, 2005 |
| 6930011 |
Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
Aug. 16, 2005 |
| 6931345 |
Method for quantifying safe operating area for bipolar junction transistor |
Aug. 16, 2005 |
|
|
|
