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Class Information
Number: 257/591
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Description: Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4136353 |
Bipolar transistor with high-low emitter impurity concentration |
Jan. 23, 1979 |
| 4130826 |
Monolithic integrated semiconductor circuit |
Dec. 19, 1978 |
| 4118250 |
Process for producing integrated circuit devices by ion implantation |
Oct. 3, 1978 |
| 4118251 |
Process for the production of a locally high, inverse, current amplification in a planar transistor |
Oct. 3, 1978 |
| 4080619 |
Bipolar type semiconductor device |
Mar. 21, 1978 |
| 4058825 |
Complementary transistor structure having two epitaxial layers and method of manufacturing same |
Nov. 15, 1977 |
| 4040081 |
Alternating current control circuits |
Aug. 2, 1977 |
| 4038680 |
Semiconductor integrated circuit device |
Jul. 26, 1977 |
| 4035824 |
Semiconductor device stabilized by an insulating layer formed on a semiconductor region having a low impurity concentration |
Jul. 12, 1977 |
| 4032956 |
Transistor circuit |
Jun. 28, 1977 |
| 4032957 |
Semiconductor device |
Jun. 28, 1977 |
| 4027324 |
Bidirectional transistor |
May. 31, 1977 |
| 4007474 |
Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
Feb. 8, 1977 |
| 4000506 |
Bipolar transistor circuit |
Dec. 28, 1976 |
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