| |
 |
|
Class Information
Number: 257/591
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Description: Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5766999 |
Method for making self-aligned bipolar transistor |
Jun. 16, 1998 |
| 5691546 |
Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device |
Nov. 25, 1997 |
| RE35642 |
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
Oct. 28, 1997 |
| 5648676 |
Semiconductor device with protective element |
Jul. 15, 1997 |
| 5576572 |
Semiconductor integrated circuit device and method of manufacturing the same |
Nov. 19, 1996 |
| 5514894 |
Protection circuit device for a semiconductor integrated circuit device |
May. 7, 1996 |
| 5501992 |
Method of manufacturing bipolar transistor having ring-shaped emitter and base |
Mar. 26, 1996 |
| 5494836 |
Process of producing heterojunction bipolar transistor with silicon-germanium base |
Feb. 27, 1996 |
| 5488002 |
Method for manufacturing self-aligned bipolar transistors using double diffusion |
Jan. 30, 1996 |
| 5485033 |
Lateral transistor having a particular emitter structure |
Jan. 16, 1996 |
| 5471085 |
Semiconductor device with polycrystalline silicon emitter conductive layer |
Nov. 28, 1995 |
| 5455450 |
Semiconductor device comprising a lateral bipolar transistor |
Oct. 3, 1995 |
| 5422841 |
Semiconductor memory device having reverse base current bipolar transistor-field effect transistor memory cell |
Jun. 6, 1995 |
| 5408124 |
Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance |
Apr. 18, 1995 |
| 5369298 |
Bipolar transistor having an emitter with interdigitated comb-shaped inner and outer edger |
Nov. 29, 1994 |
| 5352912 |
Graded bandgap single-crystal emitter heterojunction bipolar transistor |
Oct. 4, 1994 |
| 5352911 |
Dual base HBT |
Oct. 4, 1994 |
| 5342794 |
Method for forming laterally graded deposit-type emitter for bipolar transistor |
Aug. 30, 1994 |
| 5323031 |
Bipolar transistor with a particular silicon germanium alloy structure |
Jun. 21, 1994 |
| 5323056 |
Bipolar transistor with a particular emitter structure |
Jun. 21, 1994 |
| 5323057 |
Lateral bipolar transistor with insulating trenches |
Jun. 21, 1994 |
| 5321302 |
Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency |
Jun. 14, 1994 |
| 5311055 |
Trenched bipolar transistor structures |
May. 10, 1994 |
| 5311047 |
Amorphous SI/SIC heterojunction color-sensitive phototransistor |
May. 10, 1994 |
| 5280188 |
Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors |
Jan. 18, 1994 |
| 5250826 |
Planar HBT-FET Device |
Oct. 5, 1993 |
| 5235206 |
Vertical bipolar transistor with recessed epitaxially grown intrinsic base region |
Aug. 10, 1993 |
| 5231298 |
GaAs device having a strain-free c-doped layer |
Jul. 27, 1993 |
| 5198692 |
Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions |
Mar. 30, 1993 |
| 5150184 |
Method for forming emitters in a BiCMOS process |
Sep. 22, 1992 |
| 5144408 |
Semiconductor integrated circuit device and method of manufacturing the same |
Sep. 1, 1992 |
| 5111266 |
Semiconductor device having a region doped to a level exceeding the solubility limit |
May. 5, 1992 |
| 5109263 |
Semiconductor device with optimal distance between emitter and trench isolation |
Apr. 28, 1992 |
| 4967254 |
Semiconductor device |
Oct. 30, 1990 |
| 4801555 |
Double-implant process for forming graded source/drain regions |
Jan. 31, 1989 |
| 4710241 |
Method of making a bipolar semiconductor device |
Dec. 1, 1987 |
| 4609414 |
Emitter finger structure in a switching transistor |
Sep. 2, 1986 |
| 4559696 |
Ion implantation to increase emitter energy gap in bipolar transistors |
Dec. 24, 1985 |
| 4542580 |
Method of fabricating n-type silicon regions and associated contacts |
Sep. 24, 1985 |
| 4534806 |
Method for manufacturing vertical PNP transistor with shallow emitter |
Aug. 13, 1985 |
| 4452645 |
Method of making emitter regions by implantation through a non-monocrystalline layer |
Jun. 5, 1984 |
| 4360822 |
Semiconductor device having an improved semiconductor resistor |
Nov. 23, 1982 |
| 4333774 |
Method for producing walled emitter type bipolar transistors |
Jun. 8, 1982 |
| 4315271 |
Power transistor and method of manufacturing same |
Feb. 9, 1982 |
| 4276555 |
Controlled avalanche voltage transistor and magnetic sensor |
Jun. 30, 1981 |
| 4272307 |
Integrated circuit with I.sup.2 L and power transistors and method for making |
Jun. 9, 1981 |
| 4261002 |
Monolithic complementary darlington |
Apr. 7, 1981 |
| 4157268 |
Localized oxidation enhancement for an integrated injection logic circuit |
Jun. 5, 1979 |
| 4151541 |
Power transistor |
Apr. 24, 1979 |
| 4151006 |
Method of manufacturing a semiconductor device |
Apr. 24, 1979 |
|
|
|
