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Class Information
Number: 257/591
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Description: Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7368361 |
Bipolar junction transistors and method of manufacturing the same |
May. 6, 2008 |
| 7304334 |
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
Dec. 4, 2007 |
| 7256472 |
Bipolar transistor |
Aug. 14, 2007 |
| 7253498 |
Bipolar transistor with geometry optimized for device performance, and method of making same |
Aug. 7, 2007 |
| 7183627 |
Independent control of polycrystalline silicon-germanium in an HBT and related structure |
Feb. 27, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7091578 |
Bipolar junction transistors and methods of manufacturing the same |
Aug. 15, 2006 |
| 7078744 |
Transistor emitter having alternating undoped and doped layers |
Jul. 18, 2006 |
| 7049681 |
Bipolar transistor device having phosphorous |
May. 23, 2006 |
| 6939728 |
Method of fabricating silicon emitter with a low porosity heavily doped contact layer |
Sep. 6, 2005 |
| 6891249 |
Method and system for high density integrated bipolar power transistor using buried power buss |
May. 10, 2005 |
| 6888226 |
Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads |
May. 3, 2005 |
| 6881639 |
Method of manufacturing semiconductor device |
Apr. 19, 2005 |
| 6867477 |
High gain bipolar transistor |
Mar. 15, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6806555 |
Semiconductor component and method for fabricating it |
Oct. 19, 2004 |
| 6800880 |
Heterojunction bipolar transistors with extremely low offset voltage and high current gain |
Oct. 5, 2004 |
| 6800881 |
Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area |
Oct. 5, 2004 |
| 6781214 |
Metastable base in a high-performance HBT |
Aug. 24, 2004 |
| 6703685 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors |
Mar. 9, 2004 |
| 6703687 |
Bipolar transistor and method for manufacturing the same |
Mar. 9, 2004 |
| 6674149 |
Bipolar transistor device having phosphorous |
Jan. 6, 2004 |
| 6657281 |
Bipolar transistor with a low K material in emitter base spacer regions |
Dec. 2, 2003 |
| 6653715 |
Bipolar transistor |
Nov. 25, 2003 |
| 6611044 |
Lateral bipolar transistor and method of making same |
Aug. 26, 2003 |
| 6586782 |
Transistor layout having a heat dissipative emitter |
Jul. 1, 2003 |
| 6583494 |
Reduced base resistance in a bipolar transistor |
Jun. 24, 2003 |
| 6559517 |
Structure for a semiconductor device |
May. 6, 2003 |
| 6528829 |
Integrated circuit structure having a charge injection barrier |
Mar. 4, 2003 |
| 6492664 |
Heterojunction bipolar transistor with reduced offset voltage |
Dec. 10, 2002 |
| 6469365 |
Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component |
Oct. 22, 2002 |
| 6459103 |
Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics |
Oct. 1, 2002 |
| 6445040 |
Lateral bipolar type input/output protection device |
Sep. 3, 2002 |
| 6441462 |
Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension |
Aug. 27, 2002 |
| 6410975 |
Bipolar transistor with reduced base resistance |
Jun. 25, 2002 |
| 6406973 |
Transistor in a semiconductor device and method of manufacturing the same |
Jun. 18, 2002 |
| 6388307 |
Bipolar transistor |
May. 14, 2002 |
| 6335558 |
Complementary bipolar/CMOS epitaxial structure and method |
Jan. 1, 2002 |
| 6316817 |
MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor |
Nov. 13, 2001 |
| 6252282 |
Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
Jun. 26, 2001 |
| 6249031 |
High gain lateral PNP and NPN bipolar transistor and process compatible with CMOS for making BiCMOS circuits |
Jun. 19, 2001 |
| 6207997 |
Thin film transistor for antistatic circuit and method for fabricating the same |
Mar. 27, 2001 |
| 6114745 |
Bipolar transistor having high emitter efficiency |
Sep. 5, 2000 |
| 6043559 |
Integrated circuit package which contains two in plane voltage busses and a wrap around conductive strip that connects a bond finger to one of the busses |
Mar. 28, 2000 |
| 6028345 |
Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer |
Feb. 22, 2000 |
| 5965929 |
Bipolar Silicon transistor with arsenic and phosphorous ratio |
Oct. 12, 1999 |
| 5939768 |
Vertical bipolar power transistor with an integrated sensing circuit |
Aug. 17, 1999 |
| 5936284 |
Electrostatic discharge protection circuit and transistor |
Aug. 10, 1999 |
| 5872391 |
Bipolar junction transistors having an increased safe operating area |
Feb. 16, 1999 |
| 5777376 |
Pnp-type bipolar transistor |
Jul. 7, 1998 |
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