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Class Information
Number: 257/591
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Description: Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region).










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8710627 Uni-directional transient voltage suppressor (TVS) Apr. 29, 2014
8664080 Vertical ESD protection device Mar. 4, 2014
8664697 Transistor device Mar. 4, 2014
8618606 Semiconductor device Dec. 31, 2013
8525233 SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region Sep. 3, 2013
8525300 Tunable ESD protection device Sep. 3, 2013
8421124 High-beta bipolar junction transistor and method of manufacture Apr. 16, 2013
8390096 Adjustable holding voltage ESD protection device Mar. 5, 2013
8384193 Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain Feb. 26, 2013
8349663 Vertical diode based memory cells having a lowered programming voltage and methods of forming the same Jan. 8, 2013
8344481 Bipolar transistors with hump regions Jan. 1, 2013
8324687 Semiconductor device Dec. 4, 2012
8258545 Integrated circuit including a bipolar transistor and methods of making the same Sep. 4, 2012
8212292 High gain tunable bipolar transistor Jul. 3, 2012
8084814 Semiconductor device and method of producing the same Dec. 27, 2011
7989844 Semiconductor device and method of manufacturing such a device Aug. 2, 2011
7952166 Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device May. 31, 2011
7932541 High performance collector-up bipolar transistor Apr. 26, 2011
7911033 Bipolar transistor with depleted emitter Mar. 22, 2011
7902635 High-power-gain, bipolar transistor amplifier Mar. 8, 2011
7821037 Heterojunction bipolar transistor Oct. 26, 2010
7714329 Semiconductor device having thin film transistor May. 11, 2010
7671447 Bipolar transistor and method of manufacturing the same Mar. 2, 2010
7671371 Semiconductor layer structure and method of making the same Mar. 2, 2010
7666787 Grain growth promotion layer for semiconductor interconnect structures Feb. 23, 2010
7659179 Method of forming transistor using step STI profile in memory device Feb. 9, 2010
7655977 Trench IGBT for highly capacitive loads Feb. 2, 2010
7579635 Heterojunction bipolar transistor Aug. 25, 2009
7566585 Semiconductor component and method for production of a semiconductor component Jul. 28, 2009
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same Feb. 24, 2009
7492034 Semiconductor device Feb. 17, 2009
7465969 Bipolar transistor and method for fabricating the same Dec. 16, 2008
7368361 Bipolar junction transistors and method of manufacturing the same May. 6, 2008
7304334 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Dec. 4, 2007
7256472 Bipolar transistor Aug. 14, 2007
7253498 Bipolar transistor with geometry optimized for device performance, and method of making same Aug. 7, 2007
7183627 Independent control of polycrystalline silicon-germanium in an HBT and related structure Feb. 27, 2007
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Feb. 6, 2007
7091578 Bipolar junction transistors and methods of manufacturing the same Aug. 15, 2006
7078744 Transistor emitter having alternating undoped and doped layers Jul. 18, 2006
7049681 Bipolar transistor device having phosphorous May. 23, 2006
6939728 Method of fabricating silicon emitter with a low porosity heavily doped contact layer Sep. 6, 2005
6891249 Method and system for high density integrated bipolar power transistor using buried power buss May. 10, 2005
6888226 Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads May. 3, 2005
6881639 Method of manufacturing semiconductor device Apr. 19, 2005
6867477 High gain bipolar transistor Mar. 15, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6806555 Semiconductor component and method for fabricating it Oct. 19, 2004
6800881 Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area Oct. 5, 2004
6800880 Heterojunction bipolar transistors with extremely low offset voltage and high current gain Oct. 5, 2004

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