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Class Information
Number: 257/590
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)
Description: Subject matter wherein the device has means to reduce the minority carrier lifetime, i.e., before recombination with a majority carrier, by, for example, a region of deep level dopant or a region of damage to the semiconductor crystal.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8564098 Controlling the recombination rate in a bipolar semiconductor component Oct. 22, 2013
8258545 Integrated circuit including a bipolar transistor and methods of making the same Sep. 4, 2012
8106480 Bipolar device having improved capacitance Jan. 31, 2012
8008746 Semiconductor device Aug. 30, 2011
7932583 Reduced free-charge carrier lifetime device Apr. 26, 2011
7902634 Semiconductor device Mar. 8, 2011
7745906 Semiconductor device having spaced unit regions and heavily doped semiconductor layer Jun. 29, 2010
7579635 Heterojunction bipolar transistor Aug. 25, 2009
7538412 Semiconductor device with a field stop zone May. 26, 2009
7511353 Semiconductor diode and production method suitable therefor Mar. 31, 2009
7485920 Process to create buried heavy metal at selected depth Feb. 3, 2009
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Feb. 6, 2007
7145206 MOS field effect transistor with reduced parasitic substrate conduction Dec. 5, 2006
7126171 Bipolar transistor Oct. 24, 2006
7084429 Strained semiconductor by wafer bonding with misorientation Aug. 1, 2006
6943428 Semiconductor device including bipolar transistor and buried conductive region Sep. 13, 2005
6894367 Vertical bipolar transistor May. 17, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6800880 Heterojunction bipolar transistors with extremely low offset voltage and high current gain Oct. 5, 2004
6759694 Semiconductor phototransistor Jul. 6, 2004
6703685 Super self-aligned collector device for mono-and hetero bipolar junction transistors Mar. 9, 2004
6534801 GaN-based high electron mobility transistor Mar. 18, 2003
6512251 Semiconductor switching element that blocks in both directions Jan. 28, 2003
6509625 Guard structure for bipolar semiconductor device Jan. 21, 2003
6504232 Integrated circuit components thereof and manufacturing method Jan. 7, 2003
6465871 Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device Oct. 15, 2002
6404039 Semiconductor device with intrinsic base diffusion layer, extrinsic base diffusion layer, and common base diffusion Jun. 11, 2002
6404037 Insulated gate bipolar transistor Jun. 11, 2002
6384433 Voltage variable resistor from HBT epitaxial layers May. 7, 2002
6355971 Semiconductor switch devices having a region with three distinct zones and their manufacture Mar. 12, 2002
6281565 Semiconductor device and method for producing the same Aug. 28, 2001
6252282 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Jun. 26, 2001
6232642 Semiconductor device having impurity region locally at an end of channel formation region May. 15, 2001
6198115 IGBT with reduced forward voltage drop and reduced switching loss Mar. 6, 2001
6111325 Gettering regions and methods of forming gettering regions within a semiconductor wafer Aug. 29, 2000
6093955 Power semiconductor device Jul. 25, 2000
6048475 Gapfill of semiconductor structure using doped silicate glasses Apr. 11, 2000
5986287 Semiconductor structure for a transistor Nov. 16, 1999
5965929 Bipolar Silicon transistor with arsenic and phosphorous ratio Oct. 12, 1999
5952695 Silicon-on-insulator and CMOS-on-SOI double film structures Sep. 14, 1999
5929508 Defect gettering by induced stress Jul. 27, 1999
5923070 Semiconductor device having an element inclusion region for reducing stress caused by lattice mismatch Jul. 13, 1999
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices May. 4, 1999
5808352 Semiconductor apparatus having crystal defects Sep. 15, 1998
5773868 Semiconductor device and method of manufacturing the same Jun. 30, 1998
5672906 Semiconductor device having defects of deep level generated by electron beam irradiation in a semiconductor substrate Sep. 30, 1997
5659197 Hot-carrier shield formation for bipolar transistor Aug. 19, 1997
5640043 High voltage silicon diode with optimum placement of silicon-germanium layers Jun. 17, 1997
5629555 Integrated structure bipolar transistors with controlled storage time May. 13, 1997
5548148 MOS channel device with counterdoping of ion implant for reduced substrate sensitivity Aug. 20, 1996

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