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Class Information
Number: 257/588
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With specified electrode means > Including polycrystalline semiconductor as connection
Description: Subject matter wherein the electrode means includes polysilicon semiconductor material to make an electrical connection.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7394113 |
Self-alignment scheme for a heterojunction bipolar transistor |
Jul. 1, 2008 |
| 7297991 |
Bipolar junction transistor and fabricating method |
Nov. 20, 2007 |
| 7256472 |
Bipolar transistor |
Aug. 14, 2007 |
| 7227222 |
Semiconductor device and manufacturing method thereof |
Jun. 5, 2007 |
| 7180159 |
Bipolar transistor having base over buried insulating and polycrystalline regions |
Feb. 20, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7170113 |
Semiconductor device and method of manufacturing the same |
Jan. 30, 2007 |
| 7163854 |
Fabrication method of a semiconductor device |
Jan. 16, 2007 |
| 7157786 |
Structure of a bipolar junction transistor and fabricating method thereof |
Jan. 2, 2007 |
| 7135757 |
Bipolar transistor |
Nov. 14, 2006 |
| 7091100 |
Polysilicon bipolar transistor and method of manufacturing it |
Aug. 15, 2006 |
| 7030431 |
Metal gate with composite film stack |
Apr. 18, 2006 |
| 7005665 |
Phase change memory cell on silicon-on insulator substrate |
Feb. 28, 2006 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6974977 |
Heterojunction bipolar transistor |
Dec. 13, 2005 |
| 6933202 |
Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure |
Aug. 23, 2005 |
| 6927428 |
Lateral heterojunction bipolar transistor |
Aug. 9, 2005 |
| 6900519 |
Diffused extrinsic base and method for fabrication |
May. 31, 2005 |
| 6897547 |
Semiconductor device including bipolar junction transistor, and production method therefor |
May. 24, 2005 |
| 6890826 |
Method of making bipolar transistor with integrated base contact and field plate |
May. 10, 2005 |
| 6873029 |
Self-aligned bipolar transistor |
Mar. 29, 2005 |
| 6856000 |
Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies |
Feb. 15, 2005 |
| 6847063 |
Semiconductor device |
Jan. 25, 2005 |
| 6847062 |
Semiconductor device |
Jan. 25, 2005 |
| 6828614 |
Semiconductor constructions, and methods of forming semiconductor constructions |
Dec. 7, 2004 |
| 6818941 |
Thin film electron emitter, display device using the same and applied machine |
Nov. 16, 2004 |
| 6808999 |
Method of making a bipolar transistor having a reduced base transit time |
Oct. 26, 2004 |
| 6787879 |
Interfacial oxide in a transistor |
Sep. 7, 2004 |
| 6765243 |
HBT having a controlled emitter window opening |
Jul. 20, 2004 |
| 6730557 |
Semiconductor device and production thereof |
May. 4, 2004 |
| 6707130 |
Bipolar device with polycrystalline film contact and resistance |
Mar. 16, 2004 |
| 6703686 |
Semiconductor device |
Mar. 9, 2004 |
| 6680522 |
Semiconductor device with reduced electrical variation |
Jan. 20, 2004 |
| 6670693 |
Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
Dec. 30, 2003 |
| 6657279 |
PNP lateral bipolar electronic device and corresponding manufacturing process |
Dec. 2, 2003 |
| 6653714 |
Lateral bipolar transistor |
Nov. 25, 2003 |
| 6642606 |
Method for producing siliconized polysilicon contacts in integrated semiconductor structures |
Nov. 4, 2003 |
| 6611044 |
Lateral bipolar transistor and method of making same |
Aug. 26, 2003 |
| 6600178 |
Heterojunction bipolar transistor |
Jul. 29, 2003 |
| 6593640 |
Bipolar transistor and methods of forming bipolar transistors |
Jul. 15, 2003 |
| 6528861 |
High performance bipolar transistor architecture |
Mar. 4, 2003 |
| 6509625 |
Guard structure for bipolar semiconductor device |
Jan. 21, 2003 |
| 6504231 |
Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region |
Jan. 7, 2003 |
| 6495904 |
Compact bipolar transistor structure |
Dec. 17, 2002 |
| 6482710 |
Bipolar transistor and manufacting method thereof |
Nov. 19, 2002 |
| 6472753 |
BICMOS semiconductor integrated circuit device and fabrication process thereof |
Oct. 29, 2002 |
| 6441462 |
Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension |
Aug. 27, 2002 |
| 6437416 |
Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance |
Aug. 20, 2002 |
| 6436781 |
High speed and low parasitic capacitance semiconductor device and method for fabricating the same |
Aug. 20, 2002 |
| 6433387 |
Lateral bipolar transistor |
Aug. 13, 2002 |
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