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Class Information
Number: 257/588
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With specified electrode means > Including polycrystalline semiconductor as connection
Description: Subject matter wherein the electrode means includes polysilicon semiconductor material to make an electrical connection.


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
7394113 Self-alignment scheme for a heterojunction bipolar transistor Jul. 1, 2008
7297991 Bipolar junction transistor and fabricating method Nov. 20, 2007
7256472 Bipolar transistor Aug. 14, 2007
7227222 Semiconductor device and manufacturing method thereof Jun. 5, 2007
7180159 Bipolar transistor having base over buried insulating and polycrystalline regions Feb. 20, 2007
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Feb. 6, 2007
7170113 Semiconductor device and method of manufacturing the same Jan. 30, 2007
7163854 Fabrication method of a semiconductor device Jan. 16, 2007
7157786 Structure of a bipolar junction transistor and fabricating method thereof Jan. 2, 2007
7135757 Bipolar transistor Nov. 14, 2006
7091100 Polysilicon bipolar transistor and method of manufacturing it Aug. 15, 2006
7030431 Metal gate with composite film stack Apr. 18, 2006
7005665 Phase change memory cell on silicon-on insulator substrate Feb. 28, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6974977 Heterojunction bipolar transistor Dec. 13, 2005
6933202 Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure Aug. 23, 2005
6927428 Lateral heterojunction bipolar transistor Aug. 9, 2005
6900519 Diffused extrinsic base and method for fabrication May. 31, 2005
6897547 Semiconductor device including bipolar junction transistor, and production method therefor May. 24, 2005
6890826 Method of making bipolar transistor with integrated base contact and field plate May. 10, 2005
6873029 Self-aligned bipolar transistor Mar. 29, 2005
6856000 Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies Feb. 15, 2005
6847063 Semiconductor device Jan. 25, 2005
6847062 Semiconductor device Jan. 25, 2005
6828614 Semiconductor constructions, and methods of forming semiconductor constructions Dec. 7, 2004
6818941 Thin film electron emitter, display device using the same and applied machine Nov. 16, 2004
6808999 Method of making a bipolar transistor having a reduced base transit time Oct. 26, 2004
6787879 Interfacial oxide in a transistor Sep. 7, 2004
6765243 HBT having a controlled emitter window opening Jul. 20, 2004
6730557 Semiconductor device and production thereof May. 4, 2004
6707130 Bipolar device with polycrystalline film contact and resistance Mar. 16, 2004
6703686 Semiconductor device Mar. 9, 2004
6680522 Semiconductor device with reduced electrical variation Jan. 20, 2004
6670693 Laser synthesized wide-bandgap semiconductor electronic devices and circuits Dec. 30, 2003
6657279 PNP lateral bipolar electronic device and corresponding manufacturing process Dec. 2, 2003
6653714 Lateral bipolar transistor Nov. 25, 2003
6642606 Method for producing siliconized polysilicon contacts in integrated semiconductor structures Nov. 4, 2003
6611044 Lateral bipolar transistor and method of making same Aug. 26, 2003
6600178 Heterojunction bipolar transistor Jul. 29, 2003
6593640 Bipolar transistor and methods of forming bipolar transistors Jul. 15, 2003
6528861 High performance bipolar transistor architecture Mar. 4, 2003
6509625 Guard structure for bipolar semiconductor device Jan. 21, 2003
6504231 Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region Jan. 7, 2003
6495904 Compact bipolar transistor structure Dec. 17, 2002
6482710 Bipolar transistor and manufacting method thereof Nov. 19, 2002
6472753 BICMOS semiconductor integrated circuit device and fabrication process thereof Oct. 29, 2002
6441462 Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension Aug. 27, 2002
6437416 Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance Aug. 20, 2002
6436781 High speed and low parasitic capacitance semiconductor device and method for fabricating the same Aug. 20, 2002
6433387 Lateral bipolar transistor Aug. 13, 2002

1 2 3 4 5 6 7


 
 
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