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Class Information
Number: 257/586
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.)
Description: Subject matter wherein the device has a non-planar upper or side surface.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459766 |
Semiconductor bipolar transistor |
Dec. 2, 2008 |
| 7456071 |
Method for forming a strongly-conductive buried layer in a semiconductor substrate |
Nov. 25, 2008 |
| 7368361 |
Bipolar junction transistors and method of manufacturing the same |
May. 6, 2008 |
| 7329941 |
Creating increased mobility in a bipolar device |
Feb. 12, 2008 |
| 7288828 |
Metal oxide semiconductor transistor device |
Oct. 30, 2007 |
| 7262483 |
Semiconductor device and method for manufacturing the same |
Aug. 28, 2007 |
| 7256433 |
Bipolar transistor and a method of manufacturing the same |
Aug. 14, 2007 |
| 7247925 |
Semiconductor device and method for fabricating the same |
Jul. 24, 2007 |
| 7230324 |
Strobe light control circuit and IGBT device |
Jun. 12, 2007 |
| 7190047 |
Transistors and methods for making the same |
Mar. 13, 2007 |
| 7180159 |
Bipolar transistor having base over buried insulating and polycrystalline regions |
Feb. 20, 2007 |
| 7170133 |
Transistor and method of fabricating the same |
Jan. 30, 2007 |
| 7164186 |
Structure of semiconductor device with sinker contact region |
Jan. 16, 2007 |
| 7135757 |
Bipolar transistor |
Nov. 14, 2006 |
| 7126195 |
Method for forming a metallization layer |
Oct. 24, 2006 |
| 7126171 |
Bipolar transistor |
Oct. 24, 2006 |
| 7091578 |
Bipolar junction transistors and methods of manufacturing the same |
Aug. 15, 2006 |
| 7087980 |
Film thickness measuring monitor wafer |
Aug. 8, 2006 |
| 7087979 |
Bipolar transistor with an ultra small self-aligned polysilicon emitter |
Aug. 8, 2006 |
| 7075168 |
Semiconductor device |
Jul. 11, 2006 |
| 7071514 |
Electrostatic discharge protection device |
Jul. 4, 2006 |
| 7067857 |
Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module |
Jun. 27, 2006 |
| 7034379 |
Carbide emitter mask etch stop |
Apr. 25, 2006 |
| 7005723 |
Bipolar transistor and method of producing same |
Feb. 28, 2006 |
| 6984872 |
Method for fabricating an NPN transistor in a BICMOS technology |
Jan. 10, 2006 |
| 6984871 |
Semiconductor device with high structural reliability and low parasitic capacitance |
Jan. 10, 2006 |
| 6982452 |
Rectifying charge storage element |
Jan. 3, 2006 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6960820 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 1, 2005 |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6933545 |
Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa |
Aug. 23, 2005 |
| 6930373 |
Circuit arrangement |
Aug. 16, 2005 |
| 6927476 |
Bipolar device having shallow junction raised extrinsic base and method for making the same |
Aug. 9, 2005 |
| 6911716 |
Bipolar transistors with vertical structures |
Jun. 28, 2005 |
| 6903439 |
Bipolar transistor |
Jun. 7, 2005 |
| 6897540 |
Microelectronic device fabricating method, integrated circuit, and intermediate construction |
May. 24, 2005 |
| 6894324 |
Silicon-on-insulator diodes and ESD protection circuits |
May. 17, 2005 |
| 6881639 |
Method of manufacturing semiconductor device |
Apr. 19, 2005 |
| 6879024 |
Strobe light control circuit and IGBT device |
Apr. 12, 2005 |
| 6873050 |
Intermediate construction having an edge defined feature |
Mar. 29, 2005 |
| 6873029 |
Self-aligned bipolar transistor |
Mar. 29, 2005 |
| 6869852 |
Self-aligned raised extrinsic base bipolar transistor structure and method |
Mar. 22, 2005 |
| 6858533 |
Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same |
Feb. 22, 2005 |
| 6828603 |
Hetero-bipolar transistor with a sub-collector layer having a first portion and plural second portions |
Dec. 7, 2004 |
| 6806159 |
Method for manufacturing a semiconductor device with sinker contact region |
Oct. 19, 2004 |
| 6803642 |
Bipolar device having non-uniform depth base-emitter junction |
Oct. 12, 2004 |
| 6797995 |
Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector |
Sep. 28, 2004 |
| 6777783 |
Insulated gate bipolar transistor |
Aug. 17, 2004 |
| 6774455 |
Semiconductor device with a collector contact in a depressed well-region |
Aug. 10, 2004 |
| 6759694 |
Semiconductor phototransistor |
Jul. 6, 2004 |
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