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Class Information
Number: 257/585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With means to increase inverse gain
Description: Subject matter wherein there are means associated with the transistor to increase the gain in an inverse mode of operation.

Patents under this class:

Patent Number Title Of Patent Date Issued
8525233 SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region Sep. 3, 2013
8482130 Interconnect structure comprising blind vias intended to be metalized Jul. 9, 2013
8344478 Inductors having inductor axis parallel to substrate surface Jan. 1, 2013
7666787 Grain growth promotion layer for semiconductor interconnect structures Feb. 23, 2010
7659577 Power semiconductor device with current sense capability Feb. 9, 2010
7579635 Heterojunction bipolar transistor Aug. 25, 2009
7470961 Semiconductor device and method of manufacturing the same Dec. 30, 2008
7439607 Beta control using a rapid thermal oxidation Oct. 21, 2008
7394113 Self-alignment scheme for a heterojunction bipolar transistor Jul. 1, 2008
7230324 Strobe light control circuit and IGBT device Jun. 12, 2007
7193322 Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices Mar. 20, 2007
7115973 Dual-sided semiconductor device with a resistive element that requires little silicon surface area Oct. 3, 2006
6984593 Beta control using a rapid thermal oxidation Jan. 10, 2006
6975015 Modulated trigger device Dec. 13, 2005
6879024 Strobe light control circuit and IGBT device Apr. 12, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6815801 Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer Nov. 9, 2004
6806555 Semiconductor component and method for fabricating it Oct. 19, 2004
6777780 Trench bipolar transistor Aug. 17, 2004
6759694 Semiconductor phototransistor Jul. 6, 2004
6730981 Bipolar transistor with inclined epitaxial layer May. 4, 2004
6703686 Semiconductor device Mar. 9, 2004
6215167 Power semiconductor device employing field plate and manufacturing method thereof Apr. 10, 2001
6198156 Bipolar power transistors and manufacturing method Mar. 6, 2001
5965931 Bipolar transistor having base region with coupled delta layers Oct. 12, 1999
5886395 Semiconductor device having bipolar transistor with unique ratio of base gummel number to impurity concentration of collector region Mar. 23, 1999
5712505 Bipolar transistor having ring shape base and emitter regions Jan. 27, 1998
5593905 Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link Jan. 14, 1997
5501992 Method of manufacturing bipolar transistor having ring-shaped emitter and base Mar. 26, 1996
5471419 Semiconductor device having a programmable memory cell Nov. 28, 1995
5448104 Bipolar transistor with base charge controlled by back gate bias Sep. 5, 1995
5319239 Polysilicon-collector-on-insulator polysilicon-emitter bipolar Jun. 7, 1994
5285101 Semiconductor device Feb. 8, 1994
5256896 Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor Oct. 26, 1993
5250838 Semiconductor device comprising an integrated circuit having a vertical bipolar transistor Oct. 5, 1993
5089873 Integrated circuit having a vertical transistor Feb. 18, 1992
5021863 Semiconductor quantum effect device having negative differential resistance characteristics Jun. 4, 1991
4956681 Ternary logic circuit using resonant-tunneling transistors Sep. 11, 1990
4935800 Semiconductor integrated circuit Jun. 19, 1990
4916505 Composite unipolar-bipolar semiconductor devices Apr. 10, 1990
4907196 Semiconductor memory device using resonant-tunneling transistor Mar. 6, 1990
4902912 Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics Feb. 20, 1990
4881111 Radiation hard, high emitter-base breakdown bipolar transistor Nov. 14, 1989
4812890 Bipolar microwave integratable transistor Mar. 14, 1989
4805004 Semiconductor device with a planar junction and self-passivating termination Feb. 14, 1989
4743950 Thyristor with switchable emitter short circuit May. 10, 1988

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