| |
 |
|
Class Information
Number: 257/585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With means to increase inverse gain
Description: Subject matter wherein there are means associated with the transistor to increase the gain in an inverse mode of operation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439607 |
Beta control using a rapid thermal oxidation |
Oct. 21, 2008 |
| 7394113 |
Self-alignment scheme for a heterojunction bipolar transistor |
Jul. 1, 2008 |
| 7230324 |
Strobe light control circuit and IGBT device |
Jun. 12, 2007 |
| 7193322 |
Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices |
Mar. 20, 2007 |
| 7115973 |
Dual-sided semiconductor device with a resistive element that requires little silicon surface area |
Oct. 3, 2006 |
| 6984593 |
Beta control using a rapid thermal oxidation |
Jan. 10, 2006 |
| 6975015 |
Modulated trigger device |
Dec. 13, 2005 |
| 6879024 |
Strobe light control circuit and IGBT device |
Apr. 12, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6815801 |
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer |
Nov. 9, 2004 |
| 6806555 |
Semiconductor component and method for fabricating it |
Oct. 19, 2004 |
| 6777780 |
Trench bipolar transistor |
Aug. 17, 2004 |
| 6759694 |
Semiconductor phototransistor |
Jul. 6, 2004 |
| 6730981 |
Bipolar transistor with inclined epitaxial layer |
May. 4, 2004 |
| 6703686 |
Semiconductor device |
Mar. 9, 2004 |
| 6215167 |
Power semiconductor device employing field plate and manufacturing method thereof |
Apr. 10, 2001 |
| 6198156 |
Bipolar power transistors and manufacturing method |
Mar. 6, 2001 |
| 5965931 |
Bipolar transistor having base region with coupled delta layers |
Oct. 12, 1999 |
| 5886395 |
Semiconductor device having bipolar transistor with unique ratio of base gummel number to impurity concentration of collector region |
Mar. 23, 1999 |
| 5712505 |
Bipolar transistor having ring shape base and emitter regions |
Jan. 27, 1998 |
| 5593905 |
Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
Jan. 14, 1997 |
| 5501992 |
Method of manufacturing bipolar transistor having ring-shaped emitter and base |
Mar. 26, 1996 |
| 5471419 |
Semiconductor device having a programmable memory cell |
Nov. 28, 1995 |
| 5448104 |
Bipolar transistor with base charge controlled by back gate bias |
Sep. 5, 1995 |
| 5319239 |
Polysilicon-collector-on-insulator polysilicon-emitter bipolar |
Jun. 7, 1994 |
| 5285101 |
Semiconductor device |
Feb. 8, 1994 |
| 5256896 |
Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor |
Oct. 26, 1993 |
| 5250838 |
Semiconductor device comprising an integrated circuit having a vertical bipolar transistor |
Oct. 5, 1993 |
| 5089873 |
Integrated circuit having a vertical transistor |
Feb. 18, 1992 |
| 5021863 |
Semiconductor quantum effect device having negative differential resistance characteristics |
Jun. 4, 1991 |
| 4956681 |
Ternary logic circuit using resonant-tunneling transistors |
Sep. 11, 1990 |
| 4935800 |
Semiconductor integrated circuit |
Jun. 19, 1990 |
| 4916505 |
Composite unipolar-bipolar semiconductor devices |
Apr. 10, 1990 |
| 4907196 |
Semiconductor memory device using resonant-tunneling transistor |
Mar. 6, 1990 |
| 4902912 |
Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics |
Feb. 20, 1990 |
| 4881111 |
Radiation hard, high emitter-base breakdown bipolar transistor |
Nov. 14, 1989 |
| 4812890 |
Bipolar microwave integratable transistor |
Mar. 14, 1989 |
| 4805004 |
Semiconductor device with a planar junction and self-passivating termination |
Feb. 14, 1989 |
| 4743950 |
Thyristor with switchable emitter short circuit |
May. 10, 1988 |
|
|
|
