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Class Information
Number: 257/583
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)
Description: Subject matter wherein there are means in selected portions of the transistor to reduce the transistor action in those portions.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8536681 CMOS integrated circuit Sep. 17, 2013
8502347 Bipolar junction transistor with epitaxial contacts Aug. 6, 2013
8129818 Power device Mar. 6, 2012
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7638816 Epitaxial surge protection device Dec. 29, 2009
7601990 Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage Oct. 13, 2009
7550749 Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool Jun. 23, 2009
7397108 Bipolar transistor Jul. 8, 2008
7394113 Self-alignment scheme for a heterojunction bipolar transistor Jul. 1, 2008
7253498 Bipolar transistor with geometry optimized for device performance, and method of making same Aug. 7, 2007
7247925 Semiconductor device and method for fabricating the same Jul. 24, 2007
7247926 High-frequency switching transistor Jul. 24, 2007
7019383 Gallium arsenide HBT having increased performance and method for its fabrication Mar. 28, 2006
6917077 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode Jul. 12, 2005
6894367 Vertical bipolar transistor May. 17, 2005
6890826 Method of making bipolar transistor with integrated base contact and field plate May. 10, 2005
6891250 Semiconductor device with bipolar transistor May. 10, 2005
6881639 Method of manufacturing semiconductor device Apr. 19, 2005
6879024 Strobe light control circuit and IGBT device Apr. 12, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6803642 Bipolar device having non-uniform depth base-emitter junction Oct. 12, 2004
6777780 Trench bipolar transistor Aug. 17, 2004
6734520 Semiconductor component and method of producing it May. 11, 2004
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP Sep. 2, 2003
6570242 Bipolar transistor with high breakdown voltage collector May. 27, 2003
6459102 Peripheral structure for monolithic power device Oct. 1, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6404037 Insulated gate bipolar transistor Jun. 11, 2002
6355971 Semiconductor switch devices having a region with three distinct zones and their manufacture Mar. 12, 2002
6316817 MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor Nov. 13, 2001
6316827 Semiconductor device having improved temperature distribution Nov. 13, 2001
6252282 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Jun. 26, 2001
6215167 Power semiconductor device employing field plate and manufacturing method thereof Apr. 10, 2001
6114746 Vertical PNP transistor and relative fabrication method Sep. 5, 2000
6078095 Power transistor including a plurality of unit transistors Jun. 20, 2000
6069404 Arrangement for the reduction of noise in microwave transistors and method for the manufacture thereof May. 30, 2000
6013941 Bipolar transistor with collector surge voltage protection Jan. 11, 2000
5965931 Bipolar transistor having base region with coupled delta layers Oct. 12, 1999
5880516 Semiconductor device utilizing a pedestal collector region and method of manufacturing the same Mar. 9, 1999
5850099 Thermally uniform transistor Dec. 15, 1998
5760457 Bipolar transistor circuit element having base ballasting resistor Jun. 2, 1998
5629547 BICMOS process for counter doped collector May. 13, 1997
5596220 Integrated lateral transistor with improved current amplification Jan. 21, 1997
5539233 Controlled low collector breakdown voltage vertical transistor for ESD protection circuits Jul. 23, 1996
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures Aug. 22, 1995
5369298 Bipolar transistor having an emitter with interdigitated comb-shaped inner and outer edger Nov. 29, 1994
5352911 Dual base HBT Oct. 4, 1994
5343069 Electronic switch with a definite breakdown voltage Aug. 30, 1994
5341020 Integrated multicellular transistor chip for power switching applications Aug. 23, 1994
5341023 Novel vertical-gate CMOS compatible lateral bipolar transistor Aug. 23, 1994

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