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Class Information
Number: 257/582
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)
Description: Subject matter wherein the enlarged emitter area has a current ballasting means (e.g., emitter ballasting resistors).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8648419 ESD protection device and method Feb. 11, 2014
8193609 Heterojunction bipolar transistor device with electrostatic discharge ruggedness Jun. 5, 2012
8110472 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources Feb. 7, 2012
8072001 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Dec. 6, 2011
8008723 Semiconductor device including a plurality of diffusion layers and diffusion resistance layer Aug. 30, 2011
8008747 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources Aug. 30, 2011
7821102 Power transistor featuring a double-sided feed design and method of making the same Oct. 26, 2010
7804109 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Sep. 28, 2010
7800093 Resistive memory including buried word lines Sep. 21, 2010
7732896 Semiconductor apparatus and method of manufacturing the same Jun. 8, 2010
7723824 Methodology for recovery of hot carrier induced degradation in bipolar devices May. 25, 2010
7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer Dec. 4, 2007
7247926 High-frequency switching transistor Jul. 24, 2007
7230324 Strobe light control circuit and IGBT device Jun. 12, 2007
7163903 Method for making a semiconductor structure using silicon germanium Jan. 16, 2007
7105913 Two-layer patterned resistor Sep. 12, 2006
7084485 Method of manufacturing a semiconductor component, and semiconductor component formed thereby Aug. 1, 2006
7064416 Semiconductor device and method having multiple subcollectors formed on a common wafer Jun. 20, 2006
6946720 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Sep. 20, 2005
6879024 Strobe light control circuit and IGBT device Apr. 12, 2005
6768140 Structure and method in an HBT for an emitter ballast resistor with improved characteristics Jul. 27, 2004
6762479 Microwave array transistor for low-noise and high-power applications Jul. 13, 2004
6734520 Semiconductor component and method of producing it May. 11, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6627925 Transistor having a novel layout and an emitter having more than one feed point Sep. 30, 2003
6455919 Internally ballasted silicon germanium transistor Sep. 24, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6303973 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same Oct. 16, 2001
6303974 Semiconductor chips encapsulated within a preformed sub-assembly Oct. 16, 2001
6246092 High breakdown voltage MOS semiconductor apparatus Jun. 12, 2001
6236071 Transistor having a novel layout and an emitter having more than one feed point May. 22, 2001
6133594 Compound semiconductor device Oct. 17, 2000
6130471 Ballasting of high power silicon-germanium heterojunction biploar transistors Oct. 10, 2000
6127723 Integrated device in an emitter-switching configuration Oct. 3, 2000
6081003 Heterojunction bipolar transistor with ballast resistor Jun. 27, 2000
6043520 III-V heterojunction bipolar transistor having a GaAs emitter ballast Mar. 28, 2000
6013941 Bipolar transistor with collector surge voltage protection Jan. 11, 2000
6013942 Bipolar transistor structure Jan. 11, 2000
5998855 Bipolar power transistor with buried base and interdigitated geometry Dec. 7, 1999
5990539 Transistor component having an integrated emitter resistor Nov. 23, 1999
5939768 Vertical bipolar power transistor with an integrated sensing circuit Aug. 17, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5804867 Thermally balanced radio frequency power transistor Sep. 8, 1998
5760457 Bipolar transistor circuit element having base ballasting resistor Jun. 2, 1998
5751052 Inductive driver circuit and method therefor May. 12, 1998
5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors Apr. 7, 1998
5684326 Emitter ballast bypass for radio frequency power transistors Nov. 4, 1997
5654562 Latch resistant insulated gate semiconductor device Aug. 5, 1997
5616950 Thermally uniform transistor Apr. 1, 1997
5594272 Bipolar transistor with base and emitter contact holes having shorter central portions Jan. 14, 1997

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