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Class Information
Number: 257/582
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)
Description: Subject matter wherein the enlarged emitter area has a current ballasting means (e.g., emitter ballasting resistors).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7303968 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
Dec. 4, 2007 |
| 7247926 |
High-frequency switching transistor |
Jul. 24, 2007 |
| 7230324 |
Strobe light control circuit and IGBT device |
Jun. 12, 2007 |
| 7163903 |
Method for making a semiconductor structure using silicon germanium |
Jan. 16, 2007 |
| 7105913 |
Two-layer patterned resistor |
Sep. 12, 2006 |
| 7084485 |
Method of manufacturing a semiconductor component, and semiconductor component formed thereby |
Aug. 1, 2006 |
| 7064416 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
Jun. 20, 2006 |
| 6946720 |
Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
Sep. 20, 2005 |
| 6879024 |
Strobe light control circuit and IGBT device |
Apr. 12, 2005 |
| 6768140 |
Structure and method in an HBT for an emitter ballast resistor with improved characteristics |
Jul. 27, 2004 |
| 6762479 |
Microwave array transistor for low-noise and high-power applications |
Jul. 13, 2004 |
| 6734520 |
Semiconductor component and method of producing it |
May. 11, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6627925 |
Transistor having a novel layout and an emitter having more than one feed point |
Sep. 30, 2003 |
| 6455919 |
Internally ballasted silicon germanium transistor |
Sep. 24, 2002 |
| 6437419 |
Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
Aug. 20, 2002 |
| 6303973 |
Power transistor having large electric current capacity and semiconductor integrated circuit device using the same |
Oct. 16, 2001 |
| 6303974 |
Semiconductor chips encapsulated within a preformed sub-assembly |
Oct. 16, 2001 |
| 6246092 |
High breakdown voltage MOS semiconductor apparatus |
Jun. 12, 2001 |
| 6236071 |
Transistor having a novel layout and an emitter having more than one feed point |
May. 22, 2001 |
| 6133594 |
Compound semiconductor device |
Oct. 17, 2000 |
| 6130471 |
Ballasting of high power silicon-germanium heterojunction biploar transistors |
Oct. 10, 2000 |
| 6127723 |
Integrated device in an emitter-switching configuration |
Oct. 3, 2000 |
| 6081003 |
Heterojunction bipolar transistor with ballast resistor |
Jun. 27, 2000 |
| 6043520 |
III-V heterojunction bipolar transistor having a GaAs emitter ballast |
Mar. 28, 2000 |
| 6013941 |
Bipolar transistor with collector surge voltage protection |
Jan. 11, 2000 |
| 6013942 |
Bipolar transistor structure |
Jan. 11, 2000 |
| 5998855 |
Bipolar power transistor with buried base and interdigitated geometry |
Dec. 7, 1999 |
| 5990539 |
Transistor component having an integrated emitter resistor |
Nov. 23, 1999 |
| 5939768 |
Vertical bipolar power transistor with an integrated sensing circuit |
Aug. 17, 1999 |
| 5907180 |
Ballast monitoring for radio frequency power transistors |
May. 25, 1999 |
| 5804867 |
Thermally balanced radio frequency power transistor |
Sep. 8, 1998 |
| 5760457 |
Bipolar transistor circuit element having base ballasting resistor |
Jun. 2, 1998 |
| 5751052 |
Inductive driver circuit and method therefor |
May. 12, 1998 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5684326 |
Emitter ballast bypass for radio frequency power transistors |
Nov. 4, 1997 |
| 5654562 |
Latch resistant insulated gate semiconductor device |
Aug. 5, 1997 |
| 5616950 |
Thermally uniform transistor |
Apr. 1, 1997 |
| 5594272 |
Bipolar transistor with base and emitter contact holes having shorter central portions |
Jan. 14, 1997 |
| 5557139 |
Buried base vertical bipolar power transistor with improved current gain and operation area |
Sep. 17, 1996 |
| 5444292 |
Integrated thin film approach to achieve high ballast levels for overlay structures |
Aug. 22, 1995 |
| 5408124 |
Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance |
Apr. 18, 1995 |
| 5378922 |
HBT with semiconductor ballasting |
Jan. 3, 1995 |
| 5374844 |
Bipolar transistor structure using ballast resistor |
Dec. 20, 1994 |
| 5369298 |
Bipolar transistor having an emitter with interdigitated comb-shaped inner and outer edger |
Nov. 29, 1994 |
| 5352911 |
Dual base HBT |
Oct. 4, 1994 |
| 5321279 |
Base ballasting |
Jun. 14, 1994 |
| 5111269 |
Bipolar transistor structure containing a resistor which assures reduction in layout area |
May. 5, 1992 |
| 5053847 |
Semiconductor device |
Oct. 1, 1991 |
| 5010383 |
Power transistor device and method for making the same |
Apr. 23, 1991 |
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