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Browse by Category: Main > Physics
Class Information
Number: 257/581
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With separate emitter areas connected in parallel > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) > Thin film ballasting means (e.g., polysilicon resistor)
Description: Subject matter wherein the ballasting means comprises thin film resistor means (e.g., a thin film polysilicon resistor).










Patents under this class:

Patent Number Title Of Patent Date Issued
8653598 Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same Feb. 18, 2014
8610215 Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits Dec. 17, 2013
7964469 Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film Jun. 21, 2011
7732896 Semiconductor apparatus and method of manufacturing the same Jun. 8, 2010
7615775 Semiconductor apparatus and process for fabricating same Nov. 10, 2009
7414298 Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same Aug. 19, 2008
7365397 Semiconductor device Apr. 29, 2008
7323762 Semiconductor package substrate with embedded resistors and method for fabricating the same Jan. 29, 2008
7250348 Apparatus and method for packaging semiconductor devices using a patterned photo sensitive film to reduce stress buffering Jul. 31, 2007
7180139 Pixel structure Feb. 20, 2007
7019337 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switchin Mar. 28, 2006
6897545 Lateral operation bipolar transistor and a corresponding fabrication process May. 24, 2005
6858917 Metal oxide semiconductor (MOS) bandgap voltage reference circuit Feb. 22, 2005
6767781 Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask Jul. 27, 2004
6703685 Super self-aligned collector device for mono-and hetero bipolar junction transistors Mar. 9, 2004
6690082 High dopant concentration diffused resistor and method of manufacture therefor Feb. 10, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6482710 Bipolar transistor and manufacting method thereof Nov. 19, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6211562 Homojunction semiconductor devices with low barrier tunnel oxide contacts Apr. 3, 2001
6130471 Ballasting of high power silicon-germanium heterojunction biploar transistors Oct. 10, 2000
6013942 Bipolar transistor structure Jan. 11, 2000
5990539 Transistor component having an integrated emitter resistor Nov. 23, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5821602 RF power transistor having improved stability and gain Oct. 13, 1998
5798561 Bipolar transistor with polysilicon base Aug. 25, 1998
5760457 Bipolar transistor circuit element having base ballasting resistor Jun. 2, 1998
5684326 Emitter ballast bypass for radio frequency power transistors Nov. 4, 1997
5594272 Bipolar transistor with base and emitter contact holes having shorter central portions Jan. 14, 1997
5510642 Semiconductor device Apr. 23, 1996
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures Aug. 22, 1995
5374844 Bipolar transistor structure using ballast resistor Dec. 20, 1994
5298785 Semiconductor device Mar. 29, 1994
4680608 Semiconductor device Jul. 14, 1987
4626886 Power transistor Dec. 2, 1986
4411708 Method of making precision doped polysilicon vertical ballast resistors by multiple implantations Oct. 25, 1983
4243998 Safety circuit for a semiconductor element Jan. 6, 1981
4126879 Semiconductor device with ballast resistor adapted for a transcalent device Nov. 21, 1978
4008484 Semiconductor device having multilayered electrode structure Feb. 15, 1977











 
 
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