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Class Information
Number: 257/581
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With separate emitter areas connected in parallel > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) > Thin film ballasting means (e.g., polysilicon resistor)
Description: Subject matter wherein the ballasting means comprises thin film resistor means (e.g., a thin film polysilicon resistor).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7414298 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same |
Aug. 19, 2008 |
| 7365397 |
Semiconductor device |
Apr. 29, 2008 |
| 7323762 |
Semiconductor package substrate with embedded resistors and method for fabricating the same |
Jan. 29, 2008 |
| 7250348 |
Apparatus and method for packaging semiconductor devices using a patterned photo sensitive film to reduce stress buffering |
Jul. 31, 2007 |
| 7180139 |
Pixel structure |
Feb. 20, 2007 |
| 7019337 |
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switchin |
Mar. 28, 2006 |
| 6897545 |
Lateral operation bipolar transistor and a corresponding fabrication process |
May. 24, 2005 |
| 6858917 |
Metal oxide semiconductor (MOS) bandgap voltage reference circuit |
Feb. 22, 2005 |
| 6767781 |
Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask |
Jul. 27, 2004 |
| 6703685 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors |
Mar. 9, 2004 |
| 6690082 |
High dopant concentration diffused resistor and method of manufacture therefor |
Feb. 10, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6482710 |
Bipolar transistor and manufacting method thereof |
Nov. 19, 2002 |
| 6437419 |
Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
Aug. 20, 2002 |
| 6211562 |
Homojunction semiconductor devices with low barrier tunnel oxide contacts |
Apr. 3, 2001 |
| 6130471 |
Ballasting of high power silicon-germanium heterojunction biploar transistors |
Oct. 10, 2000 |
| 6013942 |
Bipolar transistor structure |
Jan. 11, 2000 |
| 5990539 |
Transistor component having an integrated emitter resistor |
Nov. 23, 1999 |
| 5907180 |
Ballast monitoring for radio frequency power transistors |
May. 25, 1999 |
| 5821602 |
RF power transistor having improved stability and gain |
Oct. 13, 1998 |
| 5798561 |
Bipolar transistor with polysilicon base |
Aug. 25, 1998 |
| 5760457 |
Bipolar transistor circuit element having base ballasting resistor |
Jun. 2, 1998 |
| 5684326 |
Emitter ballast bypass for radio frequency power transistors |
Nov. 4, 1997 |
| 5594272 |
Bipolar transistor with base and emitter contact holes having shorter central portions |
Jan. 14, 1997 |
| 5510642 |
Semiconductor device |
Apr. 23, 1996 |
| 5444292 |
Integrated thin film approach to achieve high ballast levels for overlay structures |
Aug. 22, 1995 |
| 5374844 |
Bipolar transistor structure using ballast resistor |
Dec. 20, 1994 |
| 5298785 |
Semiconductor device |
Mar. 29, 1994 |
| 4680608 |
Semiconductor device |
Jul. 14, 1987 |
| 4626886 |
Power transistor |
Dec. 2, 1986 |
| 4411708 |
Method of making precision doped polysilicon vertical ballast resistors by multiple implantations |
Oct. 25, 1983 |
| 4243998 |
Safety circuit for a semiconductor element |
Jan. 6, 1981 |
| 4126879 |
Semiconductor device with ballast resistor adapted for a transcalent device |
Nov. 21, 1978 |
| 4008484 |
Semiconductor device having multilayered electrode structure |
Feb. 15, 1977 |
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