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Class Information
Number: 257/580
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With separate emitter areas connected in parallel > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means)
Description: Subject matter wherein current ballasting means is provided to divide emitter current more evenly between the plurality of separate emitter areas which are electrically interconnected in parallel.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4458158 |
IC Including small signal and power devices |
Jul. 3, 1984 |
| 4417265 |
Lateral PNP power transistor |
Nov. 22, 1983 |
| 4370670 |
Transistor with plural parallel units |
Jan. 25, 1983 |
| 4266236 |
Transistor having emitter resistors for stabilization at high power operation |
May. 5, 1981 |
| 4202005 |
Distributed collector ballast resistor structure |
May. 6, 1980 |
| 4157561 |
High power transistor |
Jun. 5, 1979 |
| 4151542 |
Transistor |
Apr. 24, 1979 |
| 4136354 |
Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level |
Jan. 23, 1979 |
| 4126879 |
Semiconductor device with ballast resistor adapted for a transcalent device |
Nov. 21, 1978 |
| 4091409 |
Semiconductor device having symmetrical current distribution |
May. 23, 1978 |
| 4072979 |
Integrated power amplifier |
Feb. 7, 1978 |
| 3990092 |
Resistance element for semiconductor integrated circuit |
Nov. 2, 1976 |
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