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Class Information
Number: 257/580
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With separate emitter areas connected in parallel > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means)
Description: Subject matter wherein current ballasting means is provided to divide emitter current more evenly between the plurality of separate emitter areas which are electrically interconnected in parallel.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7319254 |
Semiconductor memory device having resistor and method of fabricating the same |
Jan. 15, 2008 |
| 7303968 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
Dec. 4, 2007 |
| 7064416 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
Jun. 20, 2006 |
| 6946720 |
Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
Sep. 20, 2005 |
| 6858917 |
Metal oxide semiconductor (MOS) bandgap voltage reference circuit |
Feb. 22, 2005 |
| 6803643 |
Compact non-linear HBT array |
Oct. 12, 2004 |
| 6798019 |
IGBT with channel resistors |
Sep. 28, 2004 |
| 6762479 |
Microwave array transistor for low-noise and high-power applications |
Jul. 13, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6642553 |
Bipolar transistor and method for producing same |
Nov. 4, 2003 |
| 6627925 |
Transistor having a novel layout and an emitter having more than one feed point |
Sep. 30, 2003 |
| 6483170 |
RF power transistor |
Nov. 19, 2002 |
| 6455919 |
Internally ballasted silicon germanium transistor |
Sep. 24, 2002 |
| 6437419 |
Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
Aug. 20, 2002 |
| 6303973 |
Power transistor having large electric current capacity and semiconductor integrated circuit device using the same |
Oct. 16, 2001 |
| 6236071 |
Transistor having a novel layout and an emitter having more than one feed point |
May. 22, 2001 |
| 6236072 |
Method and system for emitter partitioning for SiGe RF power transistors |
May. 22, 2001 |
| 6130471 |
Ballasting of high power silicon-germanium heterojunction biploar transistors |
Oct. 10, 2000 |
| 6043520 |
III-V heterojunction bipolar transistor having a GaAs emitter ballast |
Mar. 28, 2000 |
| 6013942 |
Bipolar transistor structure |
Jan. 11, 2000 |
| 6013941 |
Bipolar transistor with collector surge voltage protection |
Jan. 11, 2000 |
| 5998855 |
Bipolar power transistor with buried base and interdigitated geometry |
Dec. 7, 1999 |
| 5990539 |
Transistor component having an integrated emitter resistor |
Nov. 23, 1999 |
| 5939739 |
Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors |
Aug. 17, 1999 |
| 5907180 |
Ballast monitoring for radio frequency power transistors |
May. 25, 1999 |
| 5841184 |
Integrated emitter drain bypass capacitor for microwave/RF power device applications |
Nov. 24, 1998 |
| 5821602 |
RF power transistor having improved stability and gain |
Oct. 13, 1998 |
| 5804867 |
Thermally balanced radio frequency power transistor |
Sep. 8, 1998 |
| 5798561 |
Bipolar transistor with polysilicon base |
Aug. 25, 1998 |
| 5760457 |
Bipolar transistor circuit element having base ballasting resistor |
Jun. 2, 1998 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5654562 |
Latch resistant insulated gate semiconductor device |
Aug. 5, 1997 |
| 5594272 |
Bipolar transistor with base and emitter contact holes having shorter central portions |
Jan. 14, 1997 |
| 5557139 |
Buried base vertical bipolar power transistor with improved current gain and operation area |
Sep. 17, 1996 |
| 5557131 |
Elevated emitter for double poly BICMOS devices |
Sep. 17, 1996 |
| 5498892 |
Lightly doped drain ballast resistor |
Mar. 12, 1996 |
| 5444292 |
Integrated thin film approach to achieve high ballast levels for overlay structures |
Aug. 22, 1995 |
| 5408124 |
Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance |
Apr. 18, 1995 |
| 5387813 |
Transistors with emitters having at least three sides |
Feb. 7, 1995 |
| 5321279 |
Base ballasting |
Jun. 14, 1994 |
| 4835588 |
Transistor |
May. 30, 1989 |
| 4800416 |
Bipolar power transistor having bypassable incorporated-base ballast resistance |
Jan. 24, 1989 |
| 4769688 |
Power bipolar transistor |
Sep. 6, 1988 |
| 4762804 |
Method of manufacturing a bipolar transistor having emitter series resistors |
Aug. 9, 1988 |
| 4686557 |
Semiconductor element and method for producing the same |
Aug. 11, 1987 |
| 4656496 |
Power transistor emitter ballasting |
Apr. 7, 1987 |
| 4639757 |
Power transistor structure having an emitter ballast resistance |
Jan. 27, 1987 |
| 4511912 |
Semiconductor element |
Apr. 16, 1985 |
| 4506280 |
Transistor with improved power dissipation capability |
Mar. 19, 1985 |
| 4500900 |
Emitter ballast resistor configuration |
Feb. 19, 1985 |
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