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Class Information
Number: 257/580
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device) > With separate emitter areas connected in parallel > With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means)
Description: Subject matter wherein current ballasting means is provided to divide emitter current more evenly between the plurality of separate emitter areas which are electrically interconnected in parallel.

Sub-classes under this class:

Class Number Class Name Patents
257/581 Thin film ballasting means (e.g., polysilicon resistor) 39

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8193609 Heterojunction bipolar transistor device with electrostatic discharge ruggedness Jun. 5, 2012
7919830 Method and structure for ballast resistor Apr. 5, 2011
7732896 Semiconductor apparatus and method of manufacturing the same Jun. 8, 2010
7675120 Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes Mar. 9, 2010
7491982 Diode having low forward voltage drop Feb. 17, 2009
7319254 Semiconductor memory device having resistor and method of fabricating the same Jan. 15, 2008
7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer Dec. 4, 2007
7064416 Semiconductor device and method having multiple subcollectors formed on a common wafer Jun. 20, 2006
6946720 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Sep. 20, 2005
6858917 Metal oxide semiconductor (MOS) bandgap voltage reference circuit Feb. 22, 2005
6803643 Compact non-linear HBT array Oct. 12, 2004
6798019 IGBT with channel resistors Sep. 28, 2004
6762479 Microwave array transistor for low-noise and high-power applications Jul. 13, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6642553 Bipolar transistor and method for producing same Nov. 4, 2003
6627925 Transistor having a novel layout and an emitter having more than one feed point Sep. 30, 2003
6483170 RF power transistor Nov. 19, 2002
6455919 Internally ballasted silicon germanium transistor Sep. 24, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6303973 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same Oct. 16, 2001
6236071 Transistor having a novel layout and an emitter having more than one feed point May. 22, 2001
6236072 Method and system for emitter partitioning for SiGe RF power transistors May. 22, 2001
6130471 Ballasting of high power silicon-germanium heterojunction biploar transistors Oct. 10, 2000
6043520 III-V heterojunction bipolar transistor having a GaAs emitter ballast Mar. 28, 2000
6013942 Bipolar transistor structure Jan. 11, 2000
6013941 Bipolar transistor with collector surge voltage protection Jan. 11, 2000
5998855 Bipolar power transistor with buried base and interdigitated geometry Dec. 7, 1999
5990539 Transistor component having an integrated emitter resistor Nov. 23, 1999
5939739 Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors Aug. 17, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5841184 Integrated emitter drain bypass capacitor for microwave/RF power device applications Nov. 24, 1998
5821602 RF power transistor having improved stability and gain Oct. 13, 1998
5804867 Thermally balanced radio frequency power transistor Sep. 8, 1998
5798561 Bipolar transistor with polysilicon base Aug. 25, 1998
5760457 Bipolar transistor circuit element having base ballasting resistor Jun. 2, 1998
5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors Apr. 7, 1998
5654562 Latch resistant insulated gate semiconductor device Aug. 5, 1997
5594272 Bipolar transistor with base and emitter contact holes having shorter central portions Jan. 14, 1997
5557131 Elevated emitter for double poly BICMOS devices Sep. 17, 1996
5557139 Buried base vertical bipolar power transistor with improved current gain and operation area Sep. 17, 1996
5498892 Lightly doped drain ballast resistor Mar. 12, 1996
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures Aug. 22, 1995
5408124 Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance Apr. 18, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
5321279 Base ballasting Jun. 14, 1994
4835588 Transistor May. 30, 1989
4800416 Bipolar power transistor having bypassable incorporated-base ballast resistance Jan. 24, 1989
4769688 Power bipolar transistor Sep. 6, 1988
4762804 Method of manufacturing a bipolar transistor having emitter series resistors Aug. 9, 1988
4686557 Semiconductor element and method for producing the same Aug. 11, 1987

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