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Class Information
Number: 257/578
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > With enlarged emitter area (e.g., power device)
Description: Subject matter wherein the device has relatively enlarged emitter cross-sectional areas (e.g., power devices).










Sub-classes under this class:

Class Number Class Name Patents
257/582 With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors) 71
257/584 With housing or contact (i.e., electrode) means 138
257/583 With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown) 72
257/579 With separate emitter areas connected in parallel 134


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
6274921 Semiconductor integrated circuit including protective transistor protecting another transistor during processing Aug. 14, 2001
6274892 Devices formable by low temperature direct bonding Aug. 14, 2001
6252282 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Jun. 26, 2001
6239475 Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide May. 29, 2001
6236071 Transistor having a novel layout and an emitter having more than one feed point May. 22, 2001
6236072 Method and system for emitter partitioning for SiGe RF power transistors May. 22, 2001
6188123 Semiconductor element having vertical discrete bipolar transistor and semiconductor device having same Feb. 13, 2001
6064109 Ballast resistance for producing varied emitter current flow along the emitter's injecting edge May. 16, 2000
6060761 Lateral type transistor May. 9, 2000
6046493 Semiconductor device with special emitter connection Apr. 4, 2000
6034413 High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity Mar. 7, 2000
5998855 Bipolar power transistor with buried base and interdigitated geometry Dec. 7, 1999
5965929 Bipolar Silicon transistor with arsenic and phosphorous ratio Oct. 12, 1999
5939768 Vertical bipolar power transistor with an integrated sensing circuit Aug. 17, 1999
5914522 Power semiconductor structure with lateral transistor driven by vertical transistor Jun. 22, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5872391 Bipolar junction transistors having an increased safe operating area Feb. 16, 1999
5834827 Thin film semiconductor device, fabrication method thereof, electronic device and its fabrication method Nov. 10, 1998
5831337 Vertical-type transistor device, having a bump electrode that has a shape with no interior angle exceeding 270.degree. Nov. 3, 1998
5821148 Method of fabricating a segmented emitter low noise transistor Oct. 13, 1998
5821602 RF power transistor having improved stability and gain Oct. 13, 1998
5789799 High frequency noise and impedance matched integrated circuits Aug. 4, 1998
5786622 Bipolar transistor with a ring emitter Jul. 28, 1998
5780921 Bipolar transistor constant voltage source circuit Jul. 14, 1998
5763929 Transistor package having a series connected thermistor for protection from thermal destruction Jun. 9, 1998
5739578 High power transistor with contact plugs extended from collectors through a substrate to have ends connected together in an indent in the substrate Apr. 14, 1998
5684326 Emitter ballast bypass for radio frequency power transistors Nov. 4, 1997
5594272 Bipolar transistor with base and emitter contact holes having shorter central portions Jan. 14, 1997
5572063 Bipolar transistor with L-shaped emitter Nov. 5, 1996
5539242 Fully current-balanced bipolar power transistor for integrated circuit applications Jul. 23, 1996
5523614 Bipolar transistor having enhanced high speed operation through reduced base leakage current Jun. 4, 1996
5489799 Integrated edge structure for high voltage semiconductor devices and related manufacturing processs Feb. 6, 1996
5488252 Layout for radio frequency power transistors Jan. 30, 1996
5485033 Lateral transistor having a particular emitter structure Jan. 16, 1996
5455449 Offset lattice bipolar transistor architecture Oct. 3, 1995
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures Aug. 22, 1995
5376823 Lateral bipolar transistor and method of producing the same Dec. 27, 1994
5374844 Bipolar transistor structure using ballast resistor Dec. 20, 1994
5365085 Power semiconductor device with a current detecting function Nov. 15, 1994
5343068 Integrated bipolar power device and a fast diode Aug. 30, 1994
5341020 Integrated multicellular transistor chip for power switching applications Aug. 23, 1994
5317176 Power transistor having multifinger contacts May. 31, 1994
5250838 Semiconductor device comprising an integrated circuit having a vertical bipolar transistor Oct. 5, 1993
5235206 Vertical bipolar transistor with recessed epitaxially grown intrinsic base region Aug. 10, 1993
5179432 Integrated PNP power bipolar transistor with low injection into substrate Jan. 12, 1993
5177584 Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same Jan. 5, 1993
5166764 Input protection device Nov. 24, 1992
5137840 Vertical bipolar transistor with recessed epitaxially grown intrinsic base region Aug. 11, 1992
5121184 Bipolar transistor containing a self-aligned emitter contact and method for forming transistor Jun. 9, 1992
5097309 Vertical PNP transistor Mar. 17, 1992

1 2 3 4










 
 
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