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Class Information
Number: 257/576
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Complementary transistors share common active region (e.g., integrated injection logic, i 2 l) > Including lateral bipolar transistor structure > With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)
Description: Subject matter wherein the device has electrical contacts which are made of a refractory material (e.g., polysilicon, or a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe) nickel (Ni) or cobalt (Co)) of the periodic table of the elements.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8685809 Semiconductor structures having improved contact resistance Apr. 1, 2014
8642421 Light-emitting diode device structure with Si.sub.xN.sub.y layer Feb. 4, 2014
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8482076 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Jul. 9, 2013
8466555 Gold-free ohmic contacts Jun. 18, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8310027 Electronic device and manufacturing method thereof Nov. 13, 2012
8304819 Semiconductor device including metal silicide layer and method for manufacturing the same Nov. 6, 2012
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8269313 Bipolar transistor including conductive first and second protection layers Sep. 18, 2012
8039378 Method of manufacturing a semiconductor device Oct. 18, 2011
8030779 Multi-layered metal interconnection Oct. 4, 2011
7790580 Metal-induced crystallization of amorphous silicon in thin film transistors Sep. 7, 2010
7737512 Integrated circuit devices having uniform silicide junctions Jun. 15, 2010
7719031 Heterojunction biploar transistor and method for manufacturing same May. 18, 2010
7679164 Bipolar transistor with silicided sub-collector Mar. 16, 2010
7666787 Grain growth promotion layer for semiconductor interconnect structures Feb. 23, 2010
7629646 Trench MOSFET with terraced gate and manufacturing method thereof Dec. 8, 2009
7579285 Atomic layer deposition method for depositing a layer Aug. 25, 2009
7569911 Semiconductor device having an improved wiring or electrode structure Aug. 4, 2009
7541249 Process for producing a base connection of a bipolar transistor Jun. 2, 2009
7459755 Dual-gate semiconductor devices with enhanced scalability Dec. 2, 2008
7239009 Lead frame and semiconductor device having the same as well as method of resin-molding the same Jul. 3, 2007
7199038 Method for fabricating semiconductor device Apr. 3, 2007
7109567 Semiconductor device and method of manufacturing such device Sep. 19, 2006
7064417 Semiconductor device including a bipolar transistor Jun. 20, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6949806 Electrostatic discharge protection structure for deep sub-micron gate oxide Sep. 27, 2005
6919615 Semiconductor device for integrated injection logic cell and process for fabricating the same Jul. 19, 2005
6897545 Lateral operation bipolar transistor and a corresponding fabrication process May. 24, 2005
6787880 ESD parasitic bipolar transistors with high resistivity regions in the collector Sep. 7, 2004
6744105 Memory array having shallow bit line with silicide contact portion and method of formation Jun. 1, 2004
6737710 Transistor structure having silicide source/drain extensions May. 18, 2004
6594172 Method of selectively forming local interconnects using design rules Jul. 15, 2003
6589833 ESD parasitic bipolar transistors with high resistivity regions in the collector Jul. 8, 2003
6576973 Schottky diode on a silicon carbide substrate Jun. 10, 2003
6570240 Semiconductor device having a lateral bipolar transistor and method of manufacturing same May. 27, 2003
6495904 Compact bipolar transistor structure Dec. 17, 2002
6476506 Packaged semiconductor with multiple rows of bond pads and method therefor Nov. 5, 2002
6441462 Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension Aug. 27, 2002
6414370 Semiconductor circuit preventing electromagnetic noise Jul. 2, 2002
6306758 Multipurpose graded silicon oxynitride cap layer Oct. 23, 2001
6225679 Method and apparatus for protecting a device against voltage surges May. 1, 2001
6215160 Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the same Apr. 10, 2001
6198154 PNP lateral bipolar electronic device Mar. 6, 2001
6157068 Semiconductor device with local interconnect of metal silicide Dec. 5, 2000
6140694 Field isolated integrated injection logic gate Oct. 31, 2000
6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness Apr. 11, 2000
6040589 Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole Mar. 21, 2000

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