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Class Information
Number: 257/576
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Complementary transistors share common active region (e.g., integrated injection logic, i 2 l) > Including lateral bipolar transistor structure > With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)
Description: Subject matter wherein the device has electrical contacts which are made of a refractory material (e.g., polysilicon, or a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe) nickel (Ni) or cobalt (Co)) of the periodic table of the elements.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7579285 |
Atomic layer deposition method for depositing a layer |
Aug. 25, 2009 |
| 7569911 |
Semiconductor device having an improved wiring or electrode structure |
Aug. 4, 2009 |
| 7541249 |
Process for producing a base connection of a bipolar transistor |
Jun. 2, 2009 |
| 7459755 |
Dual-gate semiconductor devices with enhanced scalability |
Dec. 2, 2008 |
| 7239009 |
Lead frame and semiconductor device having the same as well as method of resin-molding the same |
Jul. 3, 2007 |
| 7199038 |
Method for fabricating semiconductor device |
Apr. 3, 2007 |
| 7109567 |
Semiconductor device and method of manufacturing such device |
Sep. 19, 2006 |
| 7064417 |
Semiconductor device including a bipolar transistor |
Jun. 20, 2006 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6949806 |
Electrostatic discharge protection structure for deep sub-micron gate oxide |
Sep. 27, 2005 |
| 6919615 |
Semiconductor device for integrated injection logic cell and process for fabricating the same |
Jul. 19, 2005 |
| 6897545 |
Lateral operation bipolar transistor and a corresponding fabrication process |
May. 24, 2005 |
| 6787880 |
ESD parasitic bipolar transistors with high resistivity regions in the collector |
Sep. 7, 2004 |
| 6744105 |
Memory array having shallow bit line with silicide contact portion and method of formation |
Jun. 1, 2004 |
| 6737710 |
Transistor structure having silicide source/drain extensions |
May. 18, 2004 |
| 6594172 |
Method of selectively forming local interconnects using design rules |
Jul. 15, 2003 |
| 6589833 |
ESD parasitic bipolar transistors with high resistivity regions in the collector |
Jul. 8, 2003 |
| 6576973 |
Schottky diode on a silicon carbide substrate |
Jun. 10, 2003 |
| 6570240 |
Semiconductor device having a lateral bipolar transistor and method of manufacturing same |
May. 27, 2003 |
| 6495904 |
Compact bipolar transistor structure |
Dec. 17, 2002 |
| 6476506 |
Packaged semiconductor with multiple rows of bond pads and method therefor |
Nov. 5, 2002 |
| 6441462 |
Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension |
Aug. 27, 2002 |
| 6414370 |
Semiconductor circuit preventing electromagnetic noise |
Jul. 2, 2002 |
| 6306758 |
Multipurpose graded silicon oxynitride cap layer |
Oct. 23, 2001 |
| 6225679 |
Method and apparatus for protecting a device against voltage surges |
May. 1, 2001 |
| 6215160 |
Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the same |
Apr. 10, 2001 |
| 6198154 |
PNP lateral bipolar electronic device |
Mar. 6, 2001 |
| 6157068 |
Semiconductor device with local interconnect of metal silicide |
Dec. 5, 2000 |
| 6140694 |
Field isolated integrated injection logic gate |
Oct. 31, 2000 |
| 6049131 |
Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness |
Apr. 11, 2000 |
| 6040589 |
Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole |
Mar. 21, 2000 |
| 6008524 |
Integrated injection logic semiconductor device |
Dec. 28, 1999 |
| 6005284 |
Semiconductor device and its manufacturing method |
Dec. 21, 1999 |
| 5986323 |
High-frequency bipolar transistor structure |
Nov. 16, 1999 |
| 5939759 |
Silicon-on-insulator device with floating collector |
Aug. 17, 1999 |
| 5917223 |
Semiconductor device having salicide layer |
Jun. 29, 1999 |
| 5917244 |
Integrated circuit inductor structure formed employing copper containing conductor winding layer clad with nickel containing conductor layer |
Jun. 29, 1999 |
| 5859469 |
Use of tungsten filled slots as ground plane in integrated circuit structure |
Jan. 12, 1999 |
| 5818100 |
Product resulting from selective deposition of polysilicon over single crystal silicon substrate |
Oct. 6, 1998 |
| 5789800 |
Bipolar transistor having an improved epitaxial base region |
Aug. 4, 1998 |
| 5631495 |
High performance bipolar devices with plurality of base contact regions formed around the emitter layer |
May. 20, 1997 |
| 5508553 |
Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate |
Apr. 16, 1996 |
| 5506157 |
Method for fabricating pillar bipolar transistor |
Apr. 9, 1996 |
| 5448104 |
Bipolar transistor with base charge controlled by back gate bias |
Sep. 5, 1995 |
| 5406113 |
Bipolar transistor having a buried collector layer |
Apr. 11, 1995 |
| 5355015 |
High breakdown lateral PNP transistor |
Oct. 11, 1994 |
| 5280190 |
Self aligned emitter/runner integrated circuit |
Jan. 18, 1994 |
| 5250847 |
Stress isolating signal path for integrated circuits |
Oct. 5, 1993 |
| 5144408 |
Semiconductor integrated circuit device and method of manufacturing the same |
Sep. 1, 1992 |
| 5105253 |
Structure for a substrate tap in a bipolar structure |
Apr. 14, 1992 |
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