Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Complementary transistors share common active region (e.g., integrated injection logic, i 2 l) > Including lateral bipolar transistor structure > Patents

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Class Information
Number: 257/575
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Complementary transistors share common active region (e.g., integrated injection logic, i 2 l) > Including lateral bipolar transistor structure
Description: Subject matter wherein at least one of the complementary bipolar transistors sharing a common region is a lateral bipolar transistor (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip).

Sub-classes under this class:

Class Number	Class Name	Patents
257/576	With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)	72

Patents under this class:

1 2 3 4

Patent Number	Title Of Patent	Date Issued
4450468	Gallium arsenide ISL gate with punched-through bipolar driver transistor	May. 22, 1984
4433471	Method for the formation of high density memory cells using ion implantation techniques	Feb. 28, 1984
4415816	Monolithically integrated circuit for the production of long pulses	Nov. 15, 1983
4412142	Integrated circuit incorporating low voltage and high voltage semiconductor devices	Oct. 25, 1983
4404738	Method of fabricating an I.sup.2 L element and a linear transistor on one chip	Sep. 20, 1983
4390802	Low-voltage, high-noise immunity I.sup.2 L interface	Jun. 28, 1983
4370627	Integrated injection logic amplifier and oscillator circuits	Jan. 25, 1983
4348600	Controlled current source for I.sup.2 L to analog interfaces	Sep. 7, 1982
4348595	Circuit including at least two MTL semi-conducting devices showing different rise times and logic circuits made-up therefrom	Sep. 7, 1982
4340827	Semiconductor integrated circuit	Jul. 20, 1982
4338139	Method of forming Schottky-I.sup.2 L devices by implantation and laser bombardment	Jul. 6, 1982
4338619	Flip-flop circuit	Jul. 6, 1982
4326135	Differential to single-ended converter utilizing inverted transistors	Apr. 20, 1982
4326212	Structure and process for optimizing the characteristics of I.sup.2 L devices	Apr. 20, 1982
4292675	Five device merged transistor RAM cell	Sep. 29, 1981
4286177	Integrated injection logic circuits	Aug. 25, 1981
4277701	Semiconductor integrated injection logic structure controlled by the injector	Jul. 7, 1981
4259730	IIL With partially spaced collars	Mar. 31, 1981
4256984	Interlevel interface for series powered IIL or SITL	Mar. 17, 1981
4255209	Process of fabricating an improved I.sup.2 L integrated circuit utilizing diffusion and epitaxial deposition	Mar. 10, 1981
4255671	IIL Type semiconductor integrated circuit	Mar. 10, 1981
4246500	Current mirror circuit	Jan. 20, 1981
4243896	I.sup.2 L Circuit with auxiliary transistor	Jan. 6, 1981
4244001	Fabrication of an integrated injection logic device with narrow basewidth	Jan. 6, 1981
4231108	Semiconductor integrated circuit device	Oct. 28, 1980
4231109	Semiconductor integrated circuit device	Oct. 28, 1980
4228525	Semiconductor integrated circuit device	Oct. 14, 1980
4220961	Monolithic combination of two complementary bipolar transistors	Sep. 2, 1980
4210925	I.sup.2 L Integrated circuit and process of fabrication	Jul. 1, 1980
4203042	Integrated circuit	May. 13, 1980
4200878	Method of fabricating a narrow base-width bipolar device and the product thereof	Apr. 29, 1980
4199776	Integrated injection logic with floating reinjectors	Apr. 22, 1980
4199775	Integrated circuit and method for fabrication thereof	Apr. 22, 1980
4197470	Triggerable flip-flop	Apr. 8, 1980
4181981	Bipolar two device dynamic memory cell	Jan. 1, 1980
4163244	Symmetrical integrated injection logic circuit	Jul. 31, 1979
4158782	I.sup.2 L interface with external inputs and method thereof	Jun. 19, 1979
4158146	Device for coupling transistors operated in I.sup.2 L to a transistor operated at a higher bias-current	Jun. 12, 1979
4156154	Flip-flop circuit	May. 22, 1979
4156246	Combined ohmic and Schottky output transistors for logic circuit	May. 22, 1979
4155014	Logic element having low power consumption	May. 15, 1979
4153487	Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques	May. 8, 1979
4151019	Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques	Apr. 24, 1979
4144106	Manufacture of an I.sup.2 device utilizing staged selective diffusion thru a polycrystalline mask	Mar. 13, 1979
4144098	P.sup.+ Buried layer for I.sup.2 L isolation by ion implantation	Mar. 13, 1979
4144586	Substrate-fed injection-coupled memory	Mar. 13, 1979
4143284	Arrangement for supplying I.sup.2 L circuits with differing currents	Mar. 6, 1979
4140922	Amplifier stage for the current supply of I.sup.2 L circuits	Feb. 20, 1979
4137469	Threshold-effect integrated injection logic circuit with hysteresis	Jan. 30, 1979
4131806	I.I.L. with injector base resistor and schottky clamp	Dec. 26, 1978