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Class Information
Number: 257/572
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) > With resistance means connected between transistor base regions
Description: Subject matter wherein the device includes a resistor element structure connecting the base regions of the Darlington bipolar transistors.


Patents under this class:

Patent Number Title Of Patent Date Issued
7319254 Semiconductor memory device having resistor and method of fabricating the same Jan. 15, 2008
7071516 Semiconductor device and driving circuit for semiconductor device Jul. 4, 2006
7053463 High-voltage integrated vertical resistor and manufacturing process thereof May. 30, 2006
6858917 Metal oxide semiconductor (MOS) bandgap voltage reference circuit Feb. 22, 2005
6803643 Compact non-linear HBT array Oct. 12, 2004
6777782 Method for fabricating base-emitter self-aligned heterojunction bipolar transistors Aug. 17, 2004
6635545 Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor Oct. 21, 2003
6486532 Structure for reduction of base and emitter resistance and related method Nov. 26, 2002
6483168 Integrated circuit having resistor formed over emitter of vertical bipolar transistor Nov. 19, 2002
6441463 IGBT, control circuit, and protection circuit on same substrate Aug. 27, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6404060 Semiconductor device having a chip-on-chip structure Jun. 11, 2002
6287948 Semiconductor device and method for making pattern data Sep. 11, 2001
6222249 Semiconductor device Apr. 24, 2001
5965931 Bipolar transistor having base region with coupled delta layers Oct. 12, 1999
5952705 Monolithically integrated planar semi-conductor arrangement with temperature compensation Sep. 14, 1999
5859469 Use of tungsten filled slots as ground plane in integrated circuit structure Jan. 12, 1999
5858850 Process of fabricating integrated heterojunction bipolar device and MIS capacitor Jan. 12, 1999
5834823 Transistor with constant voltage diode Nov. 10, 1998
5631494 Power semiconductor device with low on-state voltage May. 20, 1997
5466959 Semiconductor device for influencing the breakdown voltage of transistors Nov. 14, 1995
5449949 Monolithic integrated semiconductor device Sep. 12, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
4994880 Semiconductor device constituting bipolar transistor Feb. 19, 1991
4827322 Power transistor May. 2, 1989
4783694 Integrated bipolar-MOS semiconductor device with common collector and drain Nov. 8, 1988
4695867 Monolithically integrated planar semiconductor arrangement Sep. 22, 1987
4604640 Darlington transistors Aug. 5, 1986
4360822 Semiconductor device having an improved semiconductor resistor Nov. 23, 1982
4312011 Darlington power transistor Jan. 19, 1982
4297597 Darlington-connected semiconductor device Oct. 27, 1981
4293868 Semiconductor device, method of manufacturing the same and application thereof Oct. 6, 1981
4167748 High voltage monolithic transistor circuit Sep. 11, 1979
4138690 Darlington circuit semiconductor device Feb. 6, 1979
4136355 Darlington transistor Jan. 23, 1979
4122482 Vertical complementary bipolar transistor device with epitaxial base zones Oct. 24, 1978
4072981 Fast switching Darlington circuit Feb. 7, 1978



 
 
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