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Class Information
Number: 257/572
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) > With resistance means connected between transistor base regions
Description: Subject matter wherein the device includes a resistor element structure connecting the base regions of the Darlington bipolar transistors.
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Title Of Patent |
Date Issued |
| 7319254 |
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| 6486532 |
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| 6437419 |
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| 6404060 |
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| 6287948 |
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| 6222249 |
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| 5965931 |
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| 5952705 |
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| 5859469 |
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| 5858850 |
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Jan. 12, 1999 |
| 5834823 |
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| 5631494 |
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May. 20, 1997 |
| 5466959 |
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| 5449949 |
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Sep. 12, 1995 |
| 5387813 |
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| 4994880 |
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Feb. 19, 1991 |
| 4827322 |
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May. 2, 1989 |
| 4783694 |
Integrated bipolar-MOS semiconductor device with common collector and drain |
Nov. 8, 1988 |
| 4695867 |
Monolithically integrated planar semiconductor arrangement |
Sep. 22, 1987 |
| 4604640 |
Darlington transistors |
Aug. 5, 1986 |
| 4360822 |
Semiconductor device having an improved semiconductor resistor |
Nov. 23, 1982 |
| 4312011 |
Darlington power transistor |
Jan. 19, 1982 |
| 4297597 |
Darlington-connected semiconductor device |
Oct. 27, 1981 |
| 4293868 |
Semiconductor device, method of manufacturing the same and application thereof |
Oct. 6, 1981 |
| 4167748 |
High voltage monolithic transistor circuit |
Sep. 11, 1979 |
| 4138690 |
Darlington circuit semiconductor device |
Feb. 6, 1979 |
| 4136355 |
Darlington transistor |
Jan. 23, 1979 |
| 4122482 |
Vertical complementary bipolar transistor device with epitaxial base zones |
Oct. 24, 1978 |
| 4072981 |
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Feb. 7, 1978 |
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