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Class Information
Number: 257/571
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure > Plural non-isolated transistor structures in same structure > Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) > Non-planar structure (e.g., mesa emitter, or having a groove to define resistor)
Description: Subject matter wherein the device is a non-planar structure (i.e., the upper surface is not a completely flat, unbroken surface).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7425754 |
Structure and method of self-aligned bipolar transistor having tapered collector |
Sep. 16, 2008 |
| 7319254 |
Semiconductor memory device having resistor and method of fabricating the same |
Jan. 15, 2008 |
| 7256433 |
Bipolar transistor and a method of manufacturing the same |
Aug. 14, 2007 |
| 7253498 |
Bipolar transistor with geometry optimized for device performance, and method of making same |
Aug. 7, 2007 |
| 7247533 |
Method of fabricating semiconductor device using selective epitaxial growth |
Jul. 24, 2007 |
| 7126171 |
Bipolar transistor |
Oct. 24, 2006 |
| 7087979 |
Bipolar transistor with an ultra small self-aligned polysilicon emitter |
Aug. 8, 2006 |
| 7067857 |
Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module |
Jun. 27, 2006 |
| 7064417 |
Semiconductor device including a bipolar transistor |
Jun. 20, 2006 |
| 7061074 |
Visible imaging device using Darlington phototransistors |
Jun. 13, 2006 |
| 7034379 |
Carbide emitter mask etch stop |
Apr. 25, 2006 |
| 6812545 |
Epitaxial base bipolar transistor with raised extrinsic base |
Nov. 2, 2004 |
| 6803642 |
Bipolar device having non-uniform depth base-emitter junction |
Oct. 12, 2004 |
| 6797995 |
Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector |
Sep. 28, 2004 |
| 6777782 |
Method for fabricating base-emitter self-aligned heterojunction bipolar transistors |
Aug. 17, 2004 |
| 6680236 |
Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors |
Jan. 20, 2004 |
| 6627925 |
Transistor having a novel layout and an emitter having more than one feed point |
Sep. 30, 2003 |
| 6600179 |
Power amplifier with base and collector straps |
Jul. 29, 2003 |
| 6600211 |
Bipolar transistor constructions |
Jul. 29, 2003 |
| 6593604 |
Heterojunction bipolar transistor, manufacturing method therefor, and communication device therewith |
Jul. 15, 2003 |
| 6586782 |
Transistor layout having a heat dissipative emitter |
Jul. 1, 2003 |
| 6486532 |
Structure for reduction of base and emitter resistance and related method |
Nov. 26, 2002 |
| 6376897 |
Lateral bipolar transistor formed on an insulating layer |
Apr. 23, 2002 |
| 6310368 |
Semiconductor device and method for fabricating same |
Oct. 30, 2001 |
| 6245628 |
Method of manufacturing a resistor in a semiconductor device |
Jun. 12, 2001 |
| 6236071 |
Transistor having a novel layout and an emitter having more than one feed point |
May. 22, 2001 |
| 6222249 |
Semiconductor device |
Apr. 24, 2001 |
| 6159414 |
Large composite core structures formed by vacuum assisted resin transfer molding |
Dec. 12, 2000 |
| 6137154 |
Bipolar transistor with increased early voltage |
Oct. 24, 2000 |
| 6051871 |
Heterojunction bipolar transistor having improved heat dissipation |
Apr. 18, 2000 |
| 6040617 |
Structure to provide junction breakdown stability for deep trench devices |
Mar. 21, 2000 |
| 5861640 |
Mesa bipolar transistor with sub base layer |
Jan. 19, 1999 |
| 5859469 |
Use of tungsten filled slots as ground plane in integrated circuit structure |
Jan. 12, 1999 |
| 5783966 |
Reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
Jul. 21, 1998 |
| 5637909 |
Semiconductor device and method of manufacturing the same |
Jun. 10, 1997 |
| 5574306 |
Lateral bipolar transistor and FET |
Nov. 12, 1996 |
| 5557131 |
Elevated emitter for double poly BICMOS devices |
Sep. 17, 1996 |
| 5550392 |
Semiconductor switching devices |
Aug. 27, 1996 |
| 5548156 |
Method and apparatus for SOI transistor |
Aug. 20, 1996 |
| 5528060 |
Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications |
Jun. 18, 1996 |
| 5525817 |
Bipolar transistor |
Jun. 11, 1996 |
| 5508552 |
Transistors with multiple emitters, and transistors with substantially square base emitter junctions |
Apr. 16, 1996 |
| 5420454 |
Selective epitaxial silicon for intrinsic-extrinsic base link |
May. 30, 1995 |
| 5399899 |
Bipolar epitaxial cascode with low-level base connection |
Mar. 21, 1995 |
| 5332912 |
Heterojunction bipolar transistor |
Jul. 26, 1994 |
| 5313090 |
Bipolar memory cell having capacitors |
May. 17, 1994 |
| 5296733 |
Hetero junction bipolar transistor with improved electrode wiring contact region |
Mar. 22, 1994 |
| 5278083 |
Method for making reliable connections to small features of integrated circuits |
Jan. 11, 1994 |
| 5274265 |
Bipolar transistor with a particular electrode structure |
Dec. 28, 1993 |
| 5266830 |
Hetero junction bipolar transistor with reduced surface recombination current |
Nov. 30, 1993 |
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