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Class Information
Number: 257/565
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure
Description: Subject matter wherein the active solid-state device comprises at least one bipolar transistor.










Sub-classes under this class:

Class Number Class Name Patents
257/589 Avalanche transistor 27
257/577 Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.) 418
257/566 Plural non-isolated transistor structures in same structure 151
257/592 With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)) 533
257/591 With emitter region having specified doping concentration profile (e.g., high-low concentration step) 146
257/578 With enlarged emitter area (e.g., power device) 172
257/593 With means to increase current gain or operating frequency 247
257/585 With means to increase inverse gain 46
257/590 With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage) 82
257/586 With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.) 378
257/587 With specified electrode means 324


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8704335 Spacer formation in the fabrication of planar bipolar transistors Apr. 22, 2014
8686424 Bipolar transistor manufacturing method, bipolar transistor and integrated circuit Apr. 1, 2014
8674480 High voltage bipolar transistor with pseudo buried layers Mar. 18, 2014
8669640 Bipolar transistor Mar. 11, 2014
8652919 Tunable semiconductor device Feb. 18, 2014
8648443 Bipolar transistor with improved stability Feb. 11, 2014
8637923 Transistor having recess channel and fabricating method thereof Jan. 28, 2014
8629029 Vertical SOI bipolar junction transistor and manufacturing method thereof Jan. 14, 2014
8618636 Fin bipolar transistors having self-aligned collector and emitter regions Dec. 31, 2013
8610174 Bipolar transistor with a raised collector pedestal for reduced capacitance Dec. 17, 2013
8604590 Transistor with enhanced capacitance at electrodes and transistor with light emitting capacitive element Dec. 10, 2013
8587087 Semiconductor device and manufacturing method of the same Nov. 19, 2013
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8564098 Controlling the recombination rate in a bipolar semiconductor component Oct. 22, 2013
8558276 Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) Oct. 15, 2013
8552530 Vertical transient voltage suppressors Oct. 8, 2013
8552532 Self aligned structures and design structure thereof Oct. 8, 2013
8546850 Superjunction collectors for transistors and semiconductor devices Oct. 1, 2013
8546939 RF module including control IC without the aid of a relay pad Oct. 1, 2013
8536701 Electronic device packaging structure Sep. 17, 2013
8536679 High holding voltage BJT clamp with embedded reverse path protection in BCD process Sep. 17, 2013
8531007 Semiconductor device and the method for manufacturing the same Sep. 10, 2013
8525233 SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region Sep. 3, 2013
8502345 Reverse-conducting insulated gate bipolar transistor Aug. 6, 2013
8502347 Bipolar junction transistor with epitaxial contacts Aug. 6, 2013
8492794 Vertical polysilicon-germanium heterojunction bipolar transistor Jul. 23, 2013
8487408 Semiconductor device having bipolar transistor Jul. 16, 2013
8482101 Bipolar transistor structure and method including emitter-base interface impurity Jul. 9, 2013
8461644 Latch-up free vertical TVS diode array structure using trench isolation Jun. 11, 2013
8455980 Schottky-clamped bipolar transistor with reduced self heating Jun. 4, 2013
8421157 Semiconductor device Apr. 16, 2013
8415762 Semiconductor device for performing photoelectric conversion Apr. 9, 2013
8415763 Tunable semiconductor device Apr. 9, 2013
8415764 High-voltage BJT formed using CMOS HV processes Apr. 9, 2013
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8410572 Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production Apr. 2, 2013
8399907 VTS insulated gate bipolar transistor Mar. 19, 2013
8395188 Silicon-germanium heterojunction bipolar transistor Mar. 12, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8390096 Adjustable holding voltage ESD protection device Mar. 5, 2013
8390097 Insulated gate bipolar transistor having contact region with variable width Mar. 5, 2013
8384194 Power semiconductor device comprising a plurality of trench IGBTs Feb. 26, 2013
8384193 Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain Feb. 26, 2013
8357953 Bipolar transistor with low resistance base contact Jan. 22, 2013
8354722 SCR/MOS clamp for ESD protection of integrated circuits Jan. 15, 2013
8344481 Bipolar transistors with hump regions Jan. 1, 2013
8344427 Standard cell, semiconductor device having standard cells, and method for laying out and wiring the standard cell Jan. 1, 2013
8344480 Insulated gate bipolar transistor Jan. 1, 2013
8334579 Schottky diode Dec. 18, 2012
8334581 Semiconductor device exhibiting withstand voltages in the forward and reverse directions Dec. 18, 2012

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