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Class Information
Number: 257/565
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bipolar transistor structure
Description: Subject matter wherein the active solid-state device comprises at least one bipolar transistor.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/589 |
Avalanche transistor |
21 |
| 257/577 |
Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.) |
355 |
| 257/566 |
Plural non-isolated transistor structures in same structure |
127 |
| 257/592 |
With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)) |
465 |
| 257/591 |
With emitter region having specified doping concentration profile (e.g., high-low concentration step) |
119 |
| 257/578 |
With enlarged emitter area (e.g., power device) |
138 |
| 257/593 |
With means to increase current gain or operating frequency |
228 |
| 257/585 |
With means to increase inverse gain |
41 |
| 257/590 |
With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage) |
75 |
| 257/586 |
With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.) |
338 |
| 257/587 |
With specified electrode means |
291 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7629665 |
Semiconductor component with a channel stop zone |
Dec. 8, 2009 |
| 7622788 |
GaN heterojunction bipolar transistor with a p-type strained InGaN base layer |
Nov. 24, 2009 |
| 7619299 |
Semiconductor device and method of manufacturing the same |
Nov. 17, 2009 |
| 7605445 |
Sealed nitride layer for integrated circuits |
Oct. 20, 2009 |
| 7605446 |
Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation |
Oct. 20, 2009 |
| 7602045 |
Semiconductor device and inverter device using the same |
Oct. 13, 2009 |
| 7579635 |
Heterojunction bipolar transistor |
Aug. 25, 2009 |
| 7576406 |
Semiconductor device |
Aug. 18, 2009 |
| 7569910 |
Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer |
Aug. 4, 2009 |
| 7566947 |
Semiconductor device with bipolar transistor and method of fabricating the same |
Jul. 28, 2009 |
| 7566919 |
Method to reduce seedlayer topography in BICMOS process |
Jul. 28, 2009 |
| 7566921 |
Silicon germanium emitter |
Jul. 28, 2009 |
| 7564117 |
Bipolar transistor having variable value emitter ballast resistors |
Jul. 21, 2009 |
| 7563685 |
Bipolar-transistor and method for the production of a bipolar-transistor |
Jul. 21, 2009 |
| 7560797 |
Semiconductor device and manufacturing method of the same |
Jul. 14, 2009 |
| 7550787 |
Varied impurity profile region formation for varying breakdown voltage of devices |
Jun. 23, 2009 |
| 7547958 |
Semiconductor device, electronic device, and manufacturing method of the same |
Jun. 16, 2009 |
| 7541231 |
Integration of SiGe NPN and vertical PNP devices on a substrate |
Jun. 2, 2009 |
| 7531883 |
Magneto-resistance transistor and method thereof |
May. 12, 2009 |
| 7521327 |
High f.sub.T and f.sub.max bipolar transistor and method of making same |
Apr. 21, 2009 |
| 7521772 |
Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods |
Apr. 21, 2009 |
| 7511317 |
Porous silicon for isolation region formation and related structure |
Mar. 31, 2009 |
| 7504707 |
Semiconductor device and manufacturing method thereof |
Mar. 17, 2009 |
| 7504708 |
High-frequency switching device |
Mar. 17, 2009 |
| 7498654 |
Transistor apparatus |
Mar. 3, 2009 |
| 7492031 |
Semiconductor device |
Feb. 17, 2009 |
| 7492034 |
Semiconductor device |
Feb. 17, 2009 |
| 7488993 |
Semiconductor device and method of manufacturing the same |
Feb. 10, 2009 |
| 7482672 |
Semiconductor device structures for bipolar junction transistors |
Jan. 27, 2009 |
| 7473983 |
Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns |
Jan. 6, 2009 |
| 7466008 |
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture |
Dec. 16, 2008 |
| 7462923 |
Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS process |
Dec. 9, 2008 |
| 7462547 |
Method of fabricating a bipolar transistor having reduced collector-base capacitance |
Dec. 9, 2008 |
| 7459766 |
Semiconductor bipolar transistor |
Dec. 2, 2008 |
| 7456487 |
Semiconductor device |
Nov. 25, 2008 |
| 7446376 |
IGBT cathode design with improved safe operating area capability |
Nov. 4, 2008 |
| 7442616 |
Method of manufacturing a bipolar transistor and bipolar transistor thereof |
Oct. 28, 2008 |
| 7439607 |
Beta control using a rapid thermal oxidation |
Oct. 21, 2008 |
| 7425754 |
Structure and method of self-aligned bipolar transistor having tapered collector |
Sep. 16, 2008 |
| 7422952 |
Method of forming a BJT with ESD self protection |
Sep. 9, 2008 |
| 7423316 |
Semiconductor devices |
Sep. 9, 2008 |
| 7420228 |
Bipolar transistor comprising carbon-doped semiconductor |
Sep. 2, 2008 |
| 7420227 |
Cu-metalized compound semiconductor device |
Sep. 2, 2008 |
| 7414261 |
Ballistic semiconductor device |
Aug. 19, 2008 |
| 7414298 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same |
Aug. 19, 2008 |
| 7397109 |
Method for integration of three bipolar transistors in a semiconductor body, multilayer component, and semiconductor arrangement |
Jul. 8, 2008 |
| 7397108 |
Bipolar transistor |
Jul. 8, 2008 |
| 7394113 |
Self-alignment scheme for a heterojunction bipolar transistor |
Jul. 1, 2008 |
| 7378690 |
Method for forming patterns on a semiconductor device using a lift off technique |
May. 27, 2008 |
| 7372117 |
Magneto-resistance transistor and method thereof |
May. 13, 2008 |
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