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Class Information
Number: 257/564
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With multiple separately connected emitter, collector, or base regions in same transistor structure > Multiple base or collector regions
Description: Subject matter wherein the device contains two or more separately connected base or collector regions, but not more than one separately connected emitter region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456487 |
Semiconductor device |
Nov. 25, 2008 |
| 7342293 |
Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Mar. 11, 2008 |
| 7323763 |
Semiconductor device having an improved voltage controlled oscillator |
Jan. 29, 2008 |
| 7239007 |
Bipolar transistor with divided base and emitter regions |
Jul. 3, 2007 |
| 7235860 |
Bipolar transistor including divided emitter structure |
Jun. 26, 2007 |
| 7075156 |
Collector structure for electrostatic discharge protection circuits |
Jul. 11, 2006 |
| 7071500 |
Semiconductor device and manufacturing method for the same |
Jul. 4, 2006 |
| 7067898 |
Semiconductor device having a self-aligned base contact and narrow emitter |
Jun. 27, 2006 |
| 7049677 |
Low cost dielectric isolation method for integration of vertical power MOSFET and lateral driver devices |
May. 23, 2006 |
| 6962842 |
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT |
Nov. 8, 2005 |
| 6906410 |
Semiconductor device and method for manufacturing same |
Jun. 14, 2005 |
| 6870242 |
Method for manufacturing and structure of semiconductor device with polysilicon definition structure |
Mar. 22, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6858917 |
Metal oxide semiconductor (MOS) bandgap voltage reference circuit |
Feb. 22, 2005 |
| 6847062 |
Semiconductor device |
Jan. 25, 2005 |
| 6847063 |
Semiconductor device |
Jan. 25, 2005 |
| 6798040 |
Power semiconductor switch |
Sep. 28, 2004 |
| 6770953 |
Bipolar transistor |
Aug. 3, 2004 |
| 6569730 |
High voltage transistor using P+ buried layer |
May. 27, 2003 |
| 6323538 |
Bipolar transistor and method for fabricating the same |
Nov. 27, 2001 |
| 6303973 |
Power transistor having large electric current capacity and semiconductor integrated circuit device using the same |
Oct. 16, 2001 |
| 6281530 |
LPNP utilizing base ballast resistor |
Aug. 28, 2001 |
| 6245609 |
High voltage transistor using P+ buried layer |
Jun. 12, 2001 |
| 6218725 |
Bipolar transistors with isolation trenches to reduce collector resistance |
Apr. 17, 2001 |
| 6114742 |
Semiconductor device including crystal defect |
Sep. 5, 2000 |
| 6015982 |
Lateral bipolar field effect mode hybrid transistor and method for operating the same |
Jan. 18, 2000 |
| 5939759 |
Silicon-on-insulator device with floating collector |
Aug. 17, 1999 |
| 5773873 |
Semiconductor device having multi-emitter structure |
Jun. 30, 1998 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5548158 |
Structure of bipolar transistors with improved output current-voltage characteristics |
Aug. 20, 1996 |
| 5545918 |
Circuit construction for controlling saturation of a transistor |
Aug. 13, 1996 |
| 5523613 |
Band gap reference power supply device |
Jun. 4, 1996 |
| 5508551 |
Current mirror with saturation limiting |
Apr. 16, 1996 |
| 5455449 |
Offset lattice bipolar transistor architecture |
Oct. 3, 1995 |
| 5418386 |
Circuit construction for controlling saturation of a transistor |
May. 23, 1995 |
| 5341021 |
Bipolar transistor having an electrode structure suitable for integration |
Aug. 23, 1994 |
| 5142349 |
Self-doped high performance complementary heterojunction field effect transistor |
Aug. 25, 1992 |
| 5068702 |
Programmable transistor |
Nov. 26, 1991 |
| 4939562 |
Heterojunction bipolar transistors and method of manufacture |
Jul. 3, 1990 |
| 4730127 |
Method of matching currents from split collector lateral pnp transistors |
Mar. 8, 1988 |
| 4649411 |
Gallium arsenide bipolar ECL circuit structure |
Mar. 10, 1987 |
| 4641047 |
Complex direct coupled transistor logic |
Feb. 3, 1987 |
| 4636653 |
High voltage semi-conductor switching apparatus and method |
Jan. 13, 1987 |
| 4558286 |
Symmetrical diode clamp |
Dec. 10, 1985 |
| 4513306 |
Current ratioing device structure |
Apr. 23, 1985 |
| 4451843 |
Bipolar transistor with a plurality of parallelly connected base-collector junctions formed by plastic deformation of the crystal lattice |
May. 29, 1984 |
| 4328509 |
Current hogging logic circuit with npn vertical reversal transistor and diode/pnp vertical transistor output |
May. 4, 1982 |
| 4323795 |
Bias current network for IC digital-to-analog converters and the like |
Apr. 6, 1982 |
| 4205333 |
Lateral transistor with multi-base contacts |
May. 27, 1980 |
| 4160986 |
Bipolar transistors having fixed gain characteristics |
Jul. 10, 1979 |
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