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Class Information
Number: 257/564
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With multiple separately connected emitter, collector, or base regions in same transistor structure > Multiple base or collector regions
Description: Subject matter wherein the device contains two or more separately connected base or collector regions, but not more than one separately connected emitter region.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8378456 Unified switch array for memory devices Feb. 19, 2013
8319314 Semiconductor device Nov. 27, 2012
7927906 Method for MEMS threshold sensor packaging Apr. 19, 2011
7859082 Lateral bipolar transistor and method of production Dec. 28, 2010
7847374 Non-volatile memory cell array and logic Dec. 7, 2010
7843038 High linearity digital variable gain amplifier Nov. 30, 2010
7605047 Method for the integration of two bipolar transistors in a semiconductor body, semiconductor arrangement in a semiconductor body, and cascode circuit Oct. 20, 2009
7576409 Group III-V compound semiconductor based heterojuncton bipolar transistors with various collector profiles on a common wafer Aug. 18, 2009
7456487 Semiconductor device Nov. 25, 2008
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7323763 Semiconductor device having an improved voltage controlled oscillator Jan. 29, 2008
7239007 Bipolar transistor with divided base and emitter regions Jul. 3, 2007
7235860 Bipolar transistor including divided emitter structure Jun. 26, 2007
7075156 Collector structure for electrostatic discharge protection circuits Jul. 11, 2006
7071500 Semiconductor device and manufacturing method for the same Jul. 4, 2006
7067898 Semiconductor device having a self-aligned base contact and narrow emitter Jun. 27, 2006
7049677 Low cost dielectric isolation method for integration of vertical power MOSFET and lateral driver devices May. 23, 2006
6962842 Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Nov. 8, 2005
6906410 Semiconductor device and method for manufacturing same Jun. 14, 2005
6870242 Method for manufacturing and structure of semiconductor device with polysilicon definition structure Mar. 22, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6858917 Metal oxide semiconductor (MOS) bandgap voltage reference circuit Feb. 22, 2005
6847062 Semiconductor device Jan. 25, 2005
6847063 Semiconductor device Jan. 25, 2005
6798040 Power semiconductor switch Sep. 28, 2004
6770953 Bipolar transistor Aug. 3, 2004
6569730 High voltage transistor using P+ buried layer May. 27, 2003
6323538 Bipolar transistor and method for fabricating the same Nov. 27, 2001
6303973 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same Oct. 16, 2001
6281530 LPNP utilizing base ballast resistor Aug. 28, 2001
6245609 High voltage transistor using P+ buried layer Jun. 12, 2001
6218725 Bipolar transistors with isolation trenches to reduce collector resistance Apr. 17, 2001
6114742 Semiconductor device including crystal defect Sep. 5, 2000
6015982 Lateral bipolar field effect mode hybrid transistor and method for operating the same Jan. 18, 2000
5939759 Silicon-on-insulator device with floating collector Aug. 17, 1999
5773873 Semiconductor device having multi-emitter structure Jun. 30, 1998
5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors Apr. 7, 1998
5548158 Structure of bipolar transistors with improved output current-voltage characteristics Aug. 20, 1996
5545918 Circuit construction for controlling saturation of a transistor Aug. 13, 1996
5523613 Band gap reference power supply device Jun. 4, 1996
5508551 Current mirror with saturation limiting Apr. 16, 1996
5455449 Offset lattice bipolar transistor architecture Oct. 3, 1995
5418386 Circuit construction for controlling saturation of a transistor May. 23, 1995
5341021 Bipolar transistor having an electrode structure suitable for integration Aug. 23, 1994
5142349 Self-doped high performance complementary heterojunction field effect transistor Aug. 25, 1992
5068702 Programmable transistor Nov. 26, 1991
4939562 Heterojunction bipolar transistors and method of manufacture Jul. 3, 1990
4730127 Method of matching currents from split collector lateral pnp transistors Mar. 8, 1988
4649411 Gallium arsenide bipolar ECL circuit structure Mar. 10, 1987
4641047 Complex direct coupled transistor logic Feb. 3, 1987

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