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Class Information
Number: 257/563
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With multiple separately connected emitter, collector, or base regions in same transistor structure
Description: Subject matter wherein the device includes two or more separately connected (i.e., not commonly connected) emitter, collector, or base regions.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456487 |
Semiconductor device |
Nov. 25, 2008 |
| 7414298 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same |
Aug. 19, 2008 |
| 7355263 |
Semiconductor device and manufacturing method thereof |
Apr. 8, 2008 |
| 7323763 |
Semiconductor device having an improved voltage controlled oscillator |
Jan. 29, 2008 |
| 7262478 |
Semiconductor device and manufacturing method thereof |
Aug. 28, 2007 |
| 7239007 |
Bipolar transistor with divided base and emitter regions |
Jul. 3, 2007 |
| 7235860 |
Bipolar transistor including divided emitter structure |
Jun. 26, 2007 |
| 7067898 |
Semiconductor device having a self-aligned base contact and narrow emitter |
Jun. 27, 2006 |
| 6906410 |
Semiconductor device and method for manufacturing same |
Jun. 14, 2005 |
| 6870242 |
Method for manufacturing and structure of semiconductor device with polysilicon definition structure |
Mar. 22, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6858917 |
Metal oxide semiconductor (MOS) bandgap voltage reference circuit |
Feb. 22, 2005 |
| 6798040 |
Power semiconductor switch |
Sep. 28, 2004 |
| 6787856 |
Low triggering N MOS transistor for electrostatic discharge protection device |
Sep. 7, 2004 |
| 6777781 |
Base-to-substrate leakage cancellation |
Aug. 17, 2004 |
| 6770953 |
Bipolar transistor |
Aug. 3, 2004 |
| 6703647 |
Triple base bipolar phototransistor |
Mar. 9, 2004 |
| 6703685 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors |
Mar. 9, 2004 |
| 6674147 |
Semiconductor device having a bipolar transistor structure |
Jan. 6, 2004 |
| 6504184 |
Superior silicon carbide integrated circuits and method of fabricating |
Jan. 7, 2003 |
| 6424006 |
Semiconductor component |
Jul. 23, 2002 |
| 6323538 |
Bipolar transistor and method for fabricating the same |
Nov. 27, 2001 |
| 6316827 |
Semiconductor device having improved temperature distribution |
Nov. 13, 2001 |
| 6303973 |
Power transistor having large electric current capacity and semiconductor integrated circuit device using the same |
Oct. 16, 2001 |
| 6281530 |
LPNP utilizing base ballast resistor |
Aug. 28, 2001 |
| 6245609 |
High voltage transistor using P+ buried layer |
Jun. 12, 2001 |
| 6236072 |
Method and system for emitter partitioning for SiGe RF power transistors |
May. 22, 2001 |
| 6225679 |
Method and apparatus for protecting a device against voltage surges |
May. 1, 2001 |
| 6198154 |
PNP lateral bipolar electronic device |
Mar. 6, 2001 |
| 6087675 |
Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film |
Jul. 11, 2000 |
| 6060346 |
Semiconductor device and method for manufacturing the same |
May. 9, 2000 |
| 6060761 |
Lateral type transistor |
May. 9, 2000 |
| 5986324 |
Heterojunction bipolar transistor |
Nov. 16, 1999 |
| 5850099 |
Thermally uniform transistor |
Dec. 15, 1998 |
| 5821148 |
Method of fabricating a segmented emitter low noise transistor |
Oct. 13, 1998 |
| 5773873 |
Semiconductor device having multi-emitter structure |
Jun. 30, 1998 |
| 5747837 |
Semiconductor device having input protective function |
May. 5, 1998 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5723897 |
Segmented emitter low noise transistor |
Mar. 3, 1998 |
| 5689133 |
ESD protection circuit |
Nov. 18, 1997 |
| 5644159 |
Semiconductor device including a band gap reference power supply device |
Jul. 1, 1997 |
| 5581112 |
Lateral bipolar transistor having buried base contact |
Dec. 3, 1996 |
| 5554860 |
Resonant tunneling transistor noise generator |
Sep. 10, 1996 |
| 5523613 |
Band gap reference power supply device |
Jun. 4, 1996 |
| 5514876 |
Multi-terminal resonant tunneling transistor |
May. 7, 1996 |
| 5508552 |
Transistors with multiple emitters, and transistors with substantially square base emitter junctions |
Apr. 16, 1996 |
| 5455449 |
Offset lattice bipolar transistor architecture |
Oct. 3, 1995 |
| 5387813 |
Transistors with emitters having at least three sides |
Feb. 7, 1995 |
| 5355015 |
High breakdown lateral PNP transistor |
Oct. 11, 1994 |
| 5341023 |
Novel vertical-gate CMOS compatible lateral bipolar transistor |
Aug. 23, 1994 |
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