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Class Information
Number: 257/56
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light) > With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Description: Subject matter wherein the amorphous semiconductor material is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
4839701 Hydrogenated amorphous silicon film Jun. 13, 1989
4781765 Photovoltaic device Nov. 1, 1988
4769682 Boron doped semiconductor materials and method for producing same Sep. 6, 1988
4737429 Layered amorphous silicon imaging members Apr. 12, 1988
4710786 Wide band gap semiconductor alloy material Dec. 1, 1987
4703336 Photodetection and current control devices Oct. 27, 1987
4689645 Current control device Aug. 25, 1987
4680616 Removal of defects from semiconductors Jul. 14, 1987
4605941 Amorphous semiconductors equivalent to crystalline semiconductors Aug. 12, 1986
4581620 Semiconductor device of non-single crystal structure Apr. 8, 1986
4544617 Electrophotographic devices containing overcoated amorphous silicon compositions Oct. 1, 1985
4542256 Graded affinity photovoltaic cell Sep. 17, 1985
4539283 Amorphous silicon photoconductive member Sep. 3, 1985
4536459 Photoconductive member having multiple amorphous layers Aug. 20, 1985
4532196 Amorphous silicon photoreceptor with nitrogen and boron Jul. 30, 1985
4529679 Photoconductive member Jul. 16, 1985
4525442 Photoconductive member containing an amorphous boron layer Jun. 25, 1985
4523370 Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction Jun. 18, 1985
4522905 Amorphous silicon photoconductive member with interface and rectifying layers Jun. 11, 1985
4520380 Amorphous semiconductors equivalent to crystalline semiconductors May. 28, 1985
4517269 Photoconductive member May. 14, 1985
4508609 Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets Apr. 2, 1985
4500744 Photovoltaic device Feb. 19, 1985
4498092 Semiconductor photoelectric conversion device Feb. 5, 1985
4495262 Photosensitive member for electrophotography comprises inorganic layers Jan. 22, 1985
4490453 Photoconductive member of a-silicon with nitrogen Dec. 25, 1984
4490454 Photoconductive member comprising multiple amorphous layers Dec. 25, 1984
4485389 Amorphous semiconductors equivalent to crystalline semiconductors Nov. 27, 1984
4409605 Amorphous semiconductors equivalent to crystalline semiconductors Oct. 11, 1983
4385200 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon May. 24, 1983
4379943 Current enhanced photovoltaic device Apr. 12, 1983
4365107 Amorphous film solar cell Dec. 21, 1982
4342044 Method for optimizing photoresponsive amorphous alloys and devices Jul. 27, 1982
4330182 Method of forming semiconducting materials and barriers May. 18, 1982
4251287 Amorphous semiconductor solar cell Feb. 17, 1981
4239554 Semiconductor photoelectric conversion device Dec. 16, 1980
4217148 Compensated amorphous silicon solar cell Aug. 12, 1980
4196438 Article and device having an amorphous silicon containing a halogen and method of fabrication Apr. 1, 1980

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