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Class Information
Number: 257/56
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light) > With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Description: Subject matter wherein the amorphous semiconductor material is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6097071 ESD protection clamp for mixed voltage I/O stages using NMOS transistors Aug. 1, 2000
6093936 Integrated circuit with isolation of field oxidation by noble gas implantation Jul. 25, 2000
6037611 Thin film transistor and its fabrication Mar. 14, 2000
6028264 Semiconductor having low concentration of carbon Feb. 22, 2000
5970325 Thin-film switching device having chlorine-containing active region and methods of fabrication therefor Oct. 19, 1999
5959312 Sensor with doped microcrystalline silicon channel leads with bubble formation protection means Sep. 28, 1999
5959313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component Sep. 28, 1999
5942049 Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition Aug. 24, 1999
5883398 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering Mar. 16, 1999
5824418 Optically transparent, electrically conductive semiconductor windows Oct. 20, 1998
5811836 Thin film transistor having protective layer for pixel electrode Sep. 22, 1998
5808318 Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction Sep. 15, 1998
5751016 Device having a switch comprising a chromium layer May. 12, 1998
5731613 Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms Mar. 24, 1998
5693975 Compact P-channel/N-channel transistor structure Dec. 2, 1997
5682037 Thin film detector of ultraviolet radiation, with high spectral selectivity option Oct. 28, 1997
5676765 Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process Oct. 14, 1997
5656822 Thin film transistor having increased effective channel width Aug. 12, 1997
5644145 Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma Jul. 1, 1997
5585949 Electro-optical device Dec. 17, 1996
5565691 Thin film semiconductor system Oct. 15, 1996
5563425 Photoelectrical conversion device and generating system using the same Oct. 8, 1996
5530264 Photoelectric conversion device and photoelectric conversion module each having a protective member comprised of fluorine-containing polymer resin Jun. 25, 1996
5521400 Semiconductor photoelectrically sensitive device with low sodium concentration May. 28, 1996
5517037 Polysilicon thin film with a particulate product of SiO.sub.x May. 14, 1996
5500538 Electro-optical device and method of driving the same Mar. 19, 1996
5440168 Thin-film transistor with suppressed off-current and Aug. 8, 1995
5414275 Photoelectric converting device and image processing apparatus utilizing the same May. 9, 1995
5371380 Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.s Dec. 6, 1994
5349204 Photoelectric conversion device Sep. 20, 1994
RE34658 Semiconductor device of non-single crystal-structure Jul. 12, 1994
5282993 Light-stable semiconductor material based on amorphous germanium and a method for its production Feb. 1, 1994
5283207 Photoconductive material and photosensor employing the photoconductive material Feb. 1, 1994
5242505 Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects Sep. 7, 1993
5234842 Method of producing p-typed CdS Aug. 10, 1993
5218213 SOI wafer with sige Jun. 8, 1993
5206523 Microporous crystalline silicon of increased band-gap for semiconductor applications Apr. 27, 1993
5053844 Amorphous silicon photosensor Oct. 1, 1991
5043784 Image sensor with multilayered amorphous silicon contact Aug. 27, 1991
5043772 Semiconductor photo-electrically-sensitive device Aug. 27, 1991
4980736 Electric conversion device Dec. 25, 1990
4969025 Amorphous silicon photosensor with oxygen doped layer Nov. 6, 1990
4965655 Interconnected semiconductor devices Oct. 23, 1990
4959106 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % Sep. 25, 1990
4903102 Semiconductor photoelectric conversion device and method of making the same Feb. 20, 1990
4891074 Multiple cell photoresponsive amorphous alloys and devices Jan. 2, 1990
4888062 Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % Dec. 19, 1989
4887134 Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded Dec. 12, 1989
4878097 Semiconductor photoelectric conversion device and method for making same Oct. 31, 1989
4860076 Solid state image device Aug. 22, 1989

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