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Class Information
Number: 257/56
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light) > With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Description: Subject matter wherein the amorphous semiconductor material is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7525131 |
Photoelectric surface and photodetector |
Apr. 28, 2009 |
| 7492988 |
Ultra-compact planar AWG circuits and systems |
Feb. 17, 2009 |
| 7352044 |
Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film |
Apr. 1, 2008 |
| 7335950 |
Semiconductor device and method of making thereof |
Feb. 26, 2008 |
| 7279370 |
Thin film transistor array substrate and method of fabricating the same |
Oct. 9, 2007 |
| 7202511 |
Near-infrared visible light photon counter |
Apr. 10, 2007 |
| 7145175 |
Semiconductor circuit and method of fabricating the same |
Dec. 5, 2006 |
| 7115925 |
Image sensor and pixel having an optimized floating diffusion |
Oct. 3, 2006 |
| 7112545 |
Passivation of material using ultra-fast pulsed laser |
Sep. 26, 2006 |
| 7102185 |
Lightshield architecture for interline transfer image sensors |
Sep. 5, 2006 |
| 7038238 |
Semiconductor device having a non-single crystalline semiconductor layer |
May. 2, 2006 |
| 6984847 |
Dual panel type organic electroluminescent device and method of fabricating the same |
Jan. 10, 2006 |
| 6930326 |
Semiconductor circuit and method of fabricating the same |
Aug. 16, 2005 |
| 6831333 |
Semiconductor device and method of making thereof |
Dec. 14, 2004 |
| 6815805 |
Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
Nov. 9, 2004 |
| 6734499 |
Operation method of semiconductor devices |
May. 11, 2004 |
| 6716664 |
Functional device and method of manufacturing the same |
Apr. 6, 2004 |
| 6670657 |
Integrated circuit having photodiode device and associated fabrication process |
Dec. 30, 2003 |
| 6639264 |
Method and structure for surface state passivation to improve yield and reliability of integrated circuit structures |
Oct. 28, 2003 |
| 6593164 |
Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same |
Jul. 15, 2003 |
| 6503771 |
Semiconductor photoelectrically sensitive device |
Jan. 7, 2003 |
| 6492659 |
Semiconductor device having single crystal grains with hydrogen and tapered gate insulation layer |
Dec. 10, 2002 |
| 6433269 |
Silicon photoelectric conversion device, method of fabricating the same and method of processing the same |
Aug. 13, 2002 |
| 6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
Feb. 12, 2002 |
| RE37441 |
Photoelectric conversion device |
Nov. 13, 2001 |
| 6310363 |
Thin-film transistor and semiconductor device using thin-film transistors with N and P impurities in the source and drain regions |
Oct. 30, 2001 |
| 6215154 |
Thin film transistor and method of fabricating the same |
Apr. 10, 2001 |
| 6184541 |
Thin film transistor and method of producing the same |
Feb. 6, 2001 |
| 6180982 |
Semiconductor device and method of making thereof |
Jan. 30, 2001 |
| 6180991 |
Semiconductor having low concentration of phosphorous |
Jan. 30, 2001 |
| 6144041 |
Semiconductor device having an active layer with no grain boundary |
Nov. 7, 2000 |
| 6114734 |
Transistor structure incorporating a solid deuterium source for gate interface passivation |
Sep. 5, 2000 |
| 6097071 |
ESD protection clamp for mixed voltage I/O stages using NMOS transistors |
Aug. 1, 2000 |
| 6093936 |
Integrated circuit with isolation of field oxidation by noble gas implantation |
Jul. 25, 2000 |
| 6037611 |
Thin film transistor and its fabrication |
Mar. 14, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 5970325 |
Thin-film switching device having chlorine-containing active region and methods of fabrication therefor |
Oct. 19, 1999 |
| 5959312 |
Sensor with doped microcrystalline silicon channel leads with bubble formation protection means |
Sep. 28, 1999 |
| 5959313 |
Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component |
Sep. 28, 1999 |
| 5942049 |
Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition |
Aug. 24, 1999 |
| 5883398 |
Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering |
Mar. 16, 1999 |
| 5824418 |
Optically transparent, electrically conductive semiconductor windows |
Oct. 20, 1998 |
| 5811836 |
Thin film transistor having protective layer for pixel electrode |
Sep. 22, 1998 |
| 5808318 |
Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction |
Sep. 15, 1998 |
| 5751016 |
Device having a switch comprising a chromium layer |
May. 12, 1998 |
| 5731613 |
Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms |
Mar. 24, 1998 |
| 5693975 |
Compact P-channel/N-channel transistor structure |
Dec. 2, 1997 |
| 5682037 |
Thin film detector of ultraviolet radiation, with high spectral selectivity option |
Oct. 28, 1997 |
| 5676765 |
Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process |
Oct. 14, 1997 |
| 5656822 |
Thin film transistor having increased effective channel width |
Aug. 12, 1997 |
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