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Class Information
Number: 257/559
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Lateral bipolar transistor structure > With active region formed along groove or exposed edge in semiconductor
Description: Subject matter wherein the device has a groove or exposed edge and an active region of the bipolar transistor is formed along the groove or exposed edge.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7446392 |
Electronic device and method for manufacturing the same |
Nov. 4, 2008 |
| 7329925 |
Device for electrostatic discharge protection |
Feb. 12, 2008 |
| 7321159 |
Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs |
Jan. 22, 2008 |
| 7298021 |
Electronic device and method for manufacturing the same |
Nov. 20, 2007 |
| 7183216 |
Methods to form oxide-filled trenches |
Feb. 27, 2007 |
| 7173320 |
High performance lateral bipolar transistor |
Feb. 6, 2007 |
| 7144785 |
Method of forming isolation trench with spacer formation |
Dec. 5, 2006 |
| 7098113 |
Method and system for providing a power lateral PNP transistor using a buried power buss |
Aug. 29, 2006 |
| 7084485 |
Method of manufacturing a semiconductor component, and semiconductor component formed thereby |
Aug. 1, 2006 |
| 7067857 |
Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module |
Jun. 27, 2006 |
| 6979882 |
Electronic device and method for manufacturing the same |
Dec. 27, 2005 |
| 6894366 |
Bipolar junction transistor with a counterdoped collector region |
May. 17, 2005 |
| 6844628 |
Electronic device and method for manufacturing the same |
Jan. 18, 2005 |
| 6791155 |
Stress-relieved shallow trench isolation (STI) structure and method for forming the same |
Sep. 14, 2004 |
| 6753592 |
Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing |
Jun. 22, 2004 |
| 6734524 |
Electronic component and method of manufacturing same |
May. 11, 2004 |
| 6570240 |
Semiconductor device having a lateral bipolar transistor and method of manufacturing same |
May. 27, 2003 |
| 6566733 |
Method and system for providing a power lateral PNP transistor using a buried power buss |
May. 20, 2003 |
| 6410972 |
Standard cell having a special region and semiconductor integrated circuit containing the standard cells |
Jun. 25, 2002 |
| 6376897 |
Lateral bipolar transistor formed on an insulating layer |
Apr. 23, 2002 |
| 6262467 |
Etch barrier structure of a semiconductor device and method for fabricating the same |
Jul. 17, 2001 |
| 6245609 |
High voltage transistor using P+ buried layer |
Jun. 12, 2001 |
| 6153919 |
Bipolar transistor with polysilicon dummy emitter |
Nov. 28, 2000 |
| 6133594 |
Compound semiconductor device |
Oct. 17, 2000 |
| 6060740 |
Non-volatile semiconductor memory device and method for manufacturing the same |
May. 9, 2000 |
| 5952706 |
Semiconductor integrated circuit having a lateral bipolar transistor compatible with deep sub-micron CMOS processing |
Sep. 14, 1999 |
| 5880516 |
Semiconductor device utilizing a pedestal collector region and method of manufacturing the same |
Mar. 9, 1999 |
| 5637909 |
Semiconductor device and method of manufacturing the same |
Jun. 10, 1997 |
| 5583368 |
Stacked devices |
Dec. 10, 1996 |
| 5548156 |
Method and apparatus for SOI transistor |
Aug. 20, 1996 |
| 5510647 |
Semiconductor device and method of manufacturing the same |
Apr. 23, 1996 |
| 5501992 |
Method of manufacturing bipolar transistor having ring-shaped emitter and base |
Mar. 26, 1996 |
| 5478760 |
Process for fabricating a vertical bipolar junction transistor |
Dec. 26, 1995 |
| 5465006 |
Bipolar stripe transistor structure |
Nov. 7, 1995 |
| 5457338 |
Process for manufacturing isolated semi conductor components in a semi conductor wafer |
Oct. 10, 1995 |
| 5448104 |
Bipolar transistor with base charge controlled by back gate bias |
Sep. 5, 1995 |
| 5446312 |
Vertical-gate CMOS compatible lateral bipolar transistor |
Aug. 29, 1995 |
| 5424575 |
Semiconductor device for SOI structure having lead conductor suitable for fine patterning |
Jun. 13, 1995 |
| 5387813 |
Transistors with emitters having at least three sides |
Feb. 7, 1995 |
| 5341023 |
Novel vertical-gate CMOS compatible lateral bipolar transistor |
Aug. 23, 1994 |
| 5323055 |
Semiconductor device with buried conductor and interconnection layer |
Jun. 21, 1994 |
| 5315151 |
Transistor structure utilizing a deposited epitaxial base region |
May. 24, 1994 |
| 5298786 |
SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same |
Mar. 29, 1994 |
| 5289024 |
Bipolar transistor with diffusion compensation |
Feb. 22, 1994 |
| 5097316 |
Complementary NPN and PNP lateral transistors separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom |
Mar. 17, 1992 |
| 5065200 |
Geometry dependent doping and electronic devices produced thereby |
Nov. 12, 1991 |
| 5065210 |
Lateral transistor structure for bipolar semiconductor integrated circuits |
Nov. 12, 1991 |
| 5047823 |
Circuit structure having a lateral bipolar transistor and its method of manufacture |
Sep. 10, 1991 |
| 5043787 |
Extremely small area npn lateral transistor |
Aug. 27, 1991 |
| 5043786 |
Lateral transistor and method of making same |
Aug. 27, 1991 |
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