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Class Information
Number: 257/559
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Lateral bipolar transistor structure > With active region formed along groove or exposed edge in semiconductor
Description: Subject matter wherein the device has a groove or exposed edge and an active region of the bipolar transistor is formed along the groove or exposed edge.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692319 Lateral trench MESFET Apr. 8, 2014
8581365 Bipolar junction transistor with layout controlled base and associated methods of manufacturing Nov. 12, 2013
8502346 Monolithic IGBT and diode structure for quasi-resonant converters Aug. 6, 2013
8497528 Method for fabricating a strained structure Jul. 30, 2013
8178946 Modulation doped super-lattice base for heterojunction bipolar transistors May. 15, 2012
7948028 DRAM device having a gate dielectric layer with multiple thicknesses May. 24, 2011
7700979 Semiconductor device having bulb-shaped recess gate and method for fabricating the same Apr. 20, 2010
7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate Jan. 20, 2009
7446392 Electronic device and method for manufacturing the same Nov. 4, 2008
7329925 Device for electrostatic discharge protection Feb. 12, 2008
7321159 Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs Jan. 22, 2008
7298021 Electronic device and method for manufacturing the same Nov. 20, 2007
7183216 Methods to form oxide-filled trenches Feb. 27, 2007
7173320 High performance lateral bipolar transistor Feb. 6, 2007
7144785 Method of forming isolation trench with spacer formation Dec. 5, 2006
7098113 Method and system for providing a power lateral PNP transistor using a buried power buss Aug. 29, 2006
7084485 Method of manufacturing a semiconductor component, and semiconductor component formed thereby Aug. 1, 2006
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module Jun. 27, 2006
6979882 Electronic device and method for manufacturing the same Dec. 27, 2005
6894366 Bipolar junction transistor with a counterdoped collector region May. 17, 2005
6844628 Electronic device and method for manufacturing the same Jan. 18, 2005
6791155 Stress-relieved shallow trench isolation (STI) structure and method for forming the same Sep. 14, 2004
6753592 Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing Jun. 22, 2004
6734524 Electronic component and method of manufacturing same May. 11, 2004
6570240 Semiconductor device having a lateral bipolar transistor and method of manufacturing same May. 27, 2003
6566733 Method and system for providing a power lateral PNP transistor using a buried power buss May. 20, 2003
6410972 Standard cell having a special region and semiconductor integrated circuit containing the standard cells Jun. 25, 2002
6376897 Lateral bipolar transistor formed on an insulating layer Apr. 23, 2002
6262467 Etch barrier structure of a semiconductor device and method for fabricating the same Jul. 17, 2001
6245609 High voltage transistor using P+ buried layer Jun. 12, 2001
6153919 Bipolar transistor with polysilicon dummy emitter Nov. 28, 2000
6133594 Compound semiconductor device Oct. 17, 2000
6060740 Non-volatile semiconductor memory device and method for manufacturing the same May. 9, 2000
5952706 Semiconductor integrated circuit having a lateral bipolar transistor compatible with deep sub-micron CMOS processing Sep. 14, 1999
5880516 Semiconductor device utilizing a pedestal collector region and method of manufacturing the same Mar. 9, 1999
5637909 Semiconductor device and method of manufacturing the same Jun. 10, 1997
5583368 Stacked devices Dec. 10, 1996
5548156 Method and apparatus for SOI transistor Aug. 20, 1996
5510647 Semiconductor device and method of manufacturing the same Apr. 23, 1996
5501992 Method of manufacturing bipolar transistor having ring-shaped emitter and base Mar. 26, 1996
5478760 Process for fabricating a vertical bipolar junction transistor Dec. 26, 1995
5465006 Bipolar stripe transistor structure Nov. 7, 1995
5457338 Process for manufacturing isolated semi conductor components in a semi conductor wafer Oct. 10, 1995
5448104 Bipolar transistor with base charge controlled by back gate bias Sep. 5, 1995
5446312 Vertical-gate CMOS compatible lateral bipolar transistor Aug. 29, 1995
5424575 Semiconductor device for SOI structure having lead conductor suitable for fine patterning Jun. 13, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
5341023 Novel vertical-gate CMOS compatible lateral bipolar transistor Aug. 23, 1994
5323055 Semiconductor device with buried conductor and interconnection layer Jun. 21, 1994
5315151 Transistor structure utilizing a deposited epitaxial base region May. 24, 1994

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