| |
 |
|
Class Information
Number: 257/558
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Lateral bipolar transistor structure > With base region doping concentration step or gradient or with means to increase current gain
Description: Subject matter wherein the device has a base region with a variable impurity dopant concentration across it, or wherein means are provided to increase the current gain of the transistor.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7422952 |
Method of forming a BJT with ESD self protection |
Sep. 9, 2008 |
| 7342293 |
Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Mar. 11, 2008 |
| 7329925 |
Device for electrostatic discharge protection |
Feb. 12, 2008 |
| 7285830 |
Lateral bipolar junction transistor in CMOS flow |
Oct. 23, 2007 |
| 7221036 |
BJT with ESD self protection |
May. 22, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7173320 |
High performance lateral bipolar transistor |
Feb. 6, 2007 |
| 7019383 |
Gallium arsenide HBT having increased performance and method for its fabrication |
Mar. 28, 2006 |
| 6894366 |
Bipolar junction transistor with a counterdoped collector region |
May. 17, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6730981 |
Bipolar transistor with inclined epitaxial layer |
May. 4, 2004 |
| 6611044 |
Lateral bipolar transistor and method of making same |
Aug. 26, 2003 |
| 6570240 |
Semiconductor device having a lateral bipolar transistor and method of manufacturing same |
May. 27, 2003 |
| 6538294 |
Trenched semiconductor device with high breakdown voltage |
Mar. 25, 2003 |
| 6501152 |
Advanced lateral PNP by implant negation |
Dec. 31, 2002 |
| 6376897 |
Lateral bipolar transistor formed on an insulating layer |
Apr. 23, 2002 |
| 6281530 |
LPNP utilizing base ballast resistor |
Aug. 28, 2001 |
| 6245609 |
High voltage transistor using P+ buried layer |
Jun. 12, 2001 |
| 6246104 |
Semiconductor device and method for manufacturing the same |
Jun. 12, 2001 |
| 6153919 |
Bipolar transistor with polysilicon dummy emitter |
Nov. 28, 2000 |
| 6043112 |
IGBT with reduced forward voltage drop and reduced switching loss |
Mar. 28, 2000 |
| 6005283 |
Complementary bipolar transistors |
Dec. 21, 1999 |
| 5965923 |
Lateral bipolar transistor and apparatus using same |
Oct. 12, 1999 |
| 5920111 |
CMOS OP-AMP circuit using BJT as input stage |
Jul. 6, 1999 |
| 5880516 |
Semiconductor device utilizing a pedestal collector region and method of manufacturing the same |
Mar. 9, 1999 |
| 5828124 |
Low-noise bipolar transistor |
Oct. 27, 1998 |
| 5777375 |
Semiconductor device improved in a structure of an L-PNP transistor |
Jul. 7, 1998 |
| 5629556 |
High speed bipolar transistor using a patterned etch stop and diffusion source |
May. 13, 1997 |
| 5565701 |
Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors |
Oct. 15, 1996 |
| 5548158 |
Structure of bipolar transistors with improved output current-voltage characteristics |
Aug. 20, 1996 |
| 5523607 |
Integrated current-limiter device for power MOS transistors |
Jun. 4, 1996 |
| 5501992 |
Method of manufacturing bipolar transistor having ring-shaped emitter and base |
Mar. 26, 1996 |
| 5448104 |
Bipolar transistor with base charge controlled by back gate bias |
Sep. 5, 1995 |
| 5422509 |
Integrated current-limiter device for power MOS transistors |
Jun. 6, 1995 |
| 5406112 |
Semiconductor device having a buried well and a crystal layer with similar impurity concentration |
Apr. 11, 1995 |
| 5355015 |
High breakdown lateral PNP transistor |
Oct. 11, 1994 |
| 5200803 |
Integrated circuit having a lateral multicollector transistor |
Apr. 6, 1993 |
| 5164797 |
Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
Nov. 17, 1992 |
| 5163178 |
Semiconductor device having enhanced impurity concentration profile |
Nov. 10, 1992 |
| 5086005 |
Bipolar transistor and method for manufacturing the same |
Feb. 4, 1992 |
| 5075737 |
Thin film semiconductor device |
Dec. 24, 1991 |
| 5070381 |
High voltage lateral transistor |
Dec. 3, 1991 |
| 5041892 |
Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation |
Aug. 20, 1991 |
| 5016075 |
Semiconductor memory device |
May. 14, 1991 |
| 4965872 |
MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator |
Oct. 23, 1990 |
| 4829356 |
Lateral transistor with buried semiconductor zone |
May. 9, 1989 |
| 4728618 |
Method of making a self-aligned bipolar using differential oxidation and diffusion |
Mar. 1, 1988 |
| 4713681 |
Structure for high breakdown PN diode with relatively high surface doping |
Dec. 15, 1987 |
| 4695862 |
Semiconductor apparatus |
Sep. 22, 1987 |
| 4667393 |
Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage |
May. 26, 1987 |
|
|
|
