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Class Information
Number: 257/558
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Lateral bipolar transistor structure > With base region doping concentration step or gradient or with means to increase current gain
Description: Subject matter wherein the device has a base region with a variable impurity dopant concentration across it, or wherein means are provided to increase the current gain of the transistor.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8674454 Lateral bipolar junction transistor Mar. 18, 2014
8624355 Semiconductor device and method for manufacturing the same Jan. 7, 2014
8178946 Modulation doped super-lattice base for heterojunction bipolar transistors May. 15, 2012
8115280 Four-terminal gate-controlled LVBJTs Feb. 14, 2012
8106481 Semiconductor devices with graded dopant regions Jan. 31, 2012
8030731 Isolated rectifier diode Oct. 4, 2011
7897995 Lateral bipolar junction transistor with reduced base resistance Mar. 1, 2011
7855421 Embedded phase-change memory and method of fabricating the same Dec. 21, 2010
7838969 Diode Nov. 23, 2010
7692268 Integrated circuit with bipolar transistor Apr. 6, 2010
7656011 Diode Feb. 2, 2010
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same Feb. 24, 2009
7422952 Method of forming a BJT with ESD self protection Sep. 9, 2008
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7329925 Device for electrostatic discharge protection Feb. 12, 2008
7285830 Lateral bipolar junction transistor in CMOS flow Oct. 23, 2007
7221036 BJT with ESD self protection May. 22, 2007
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Feb. 6, 2007
7173320 High performance lateral bipolar transistor Feb. 6, 2007
7019383 Gallium arsenide HBT having increased performance and method for its fabrication Mar. 28, 2006
6894366 Bipolar junction transistor with a counterdoped collector region May. 17, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6730981 Bipolar transistor with inclined epitaxial layer May. 4, 2004
6611044 Lateral bipolar transistor and method of making same Aug. 26, 2003
6570240 Semiconductor device having a lateral bipolar transistor and method of manufacturing same May. 27, 2003
6538294 Trenched semiconductor device with high breakdown voltage Mar. 25, 2003
6501152 Advanced lateral PNP by implant negation Dec. 31, 2002
6376897 Lateral bipolar transistor formed on an insulating layer Apr. 23, 2002
6281530 LPNP utilizing base ballast resistor Aug. 28, 2001
6245609 High voltage transistor using P+ buried layer Jun. 12, 2001
6246104 Semiconductor device and method for manufacturing the same Jun. 12, 2001
6153919 Bipolar transistor with polysilicon dummy emitter Nov. 28, 2000
6043112 IGBT with reduced forward voltage drop and reduced switching loss Mar. 28, 2000
6005283 Complementary bipolar transistors Dec. 21, 1999
5965923 Lateral bipolar transistor and apparatus using same Oct. 12, 1999
5920111 CMOS OP-AMP circuit using BJT as input stage Jul. 6, 1999
5880516 Semiconductor device utilizing a pedestal collector region and method of manufacturing the same Mar. 9, 1999
5828124 Low-noise bipolar transistor Oct. 27, 1998
5777375 Semiconductor device improved in a structure of an L-PNP transistor Jul. 7, 1998
5629556 High speed bipolar transistor using a patterned etch stop and diffusion source May. 13, 1997
5565701 Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors Oct. 15, 1996
5548158 Structure of bipolar transistors with improved output current-voltage characteristics Aug. 20, 1996
5523607 Integrated current-limiter device for power MOS transistors Jun. 4, 1996
5501992 Method of manufacturing bipolar transistor having ring-shaped emitter and base Mar. 26, 1996
5448104 Bipolar transistor with base charge controlled by back gate bias Sep. 5, 1995
5422509 Integrated current-limiter device for power MOS transistors Jun. 6, 1995
5406112 Semiconductor device having a buried well and a crystal layer with similar impurity concentration Apr. 11, 1995
5355015 High breakdown lateral PNP transistor Oct. 11, 1994
5200803 Integrated circuit having a lateral multicollector transistor Apr. 6, 1993
5164797 Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser Nov. 17, 1992

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