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Class Information
Number: 257/557
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Lateral bipolar transistor structure
Description: Subject matter wherein the device includes at least one bipolar transistor which has a lateral structure (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622790 |
Transistor assembly and method for manufacturing same |
Nov. 24, 2009 |
| 7566947 |
Semiconductor device with bipolar transistor and method of fabricating the same |
Jul. 28, 2009 |
| 7531888 |
Integrated latch-up free insulated gate bipolar transistor |
May. 12, 2009 |
| 7459766 |
Semiconductor bipolar transistor |
Dec. 2, 2008 |
| 7422952 |
Method of forming a BJT with ESD self protection |
Sep. 9, 2008 |
| 7355263 |
Semiconductor device and manufacturing method thereof |
Apr. 8, 2008 |
| 7342293 |
Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Mar. 11, 2008 |
| 7329925 |
Device for electrostatic discharge protection |
Feb. 12, 2008 |
| 7301220 |
Semiconductor device and method of forming a semiconductor device |
Nov. 27, 2007 |
| 7297607 |
Device and method of performing a seasoning process for a semiconductor device manufacturing apparatus |
Nov. 20, 2007 |
| 7288816 |
Semiconductor device |
Oct. 30, 2007 |
| 7276744 |
Semiconductor device and method of manufacturing the same |
Oct. 2, 2007 |
| 7265434 |
Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology |
Sep. 4, 2007 |
| 7265018 |
Method to build self-aligned NPN in advanced BiCMOS technology |
Sep. 4, 2007 |
| 7262443 |
Silicide uniformity for lateral bipolar transistors |
Aug. 28, 2007 |
| 7262478 |
Semiconductor device and manufacturing method thereof |
Aug. 28, 2007 |
| 7247926 |
High-frequency switching transistor |
Jul. 24, 2007 |
| 7221036 |
BJT with ESD self protection |
May. 22, 2007 |
| 7217975 |
Lateral type semiconductor device |
May. 15, 2007 |
| 7173320 |
High performance lateral bipolar transistor |
Feb. 6, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7145206 |
MOS field effect transistor with reduced parasitic substrate conduction |
Dec. 5, 2006 |
| 7098113 |
Method and system for providing a power lateral PNP transistor using a buried power buss |
Aug. 29, 2006 |
| 7081662 |
ESD protection device for high voltage |
Jul. 25, 2006 |
| 7075156 |
Collector structure for electrostatic discharge protection circuits |
Jul. 11, 2006 |
| 7067898 |
Semiconductor device having a self-aligned base contact and narrow emitter |
Jun. 27, 2006 |
| 7067899 |
Semiconductor integrated circuit device |
Jun. 27, 2006 |
| 7045830 |
High-voltage diodes formed in advanced power integrated circuit devices |
May. 16, 2006 |
| 7038249 |
Horizontal current bipolar transistor and fabrication method |
May. 2, 2006 |
| 6995453 |
High voltage integrated circuit including bipolar transistor within high voltage island area |
Feb. 7, 2006 |
| 6982473 |
Bipolar transistor |
Jan. 3, 2006 |
| 6977425 |
Semiconductor device having a lateral MOSFET and combined IC using the same |
Dec. 20, 2005 |
| 6903386 |
Transistor with means for providing a non-silicon-based emitter |
Jun. 7, 2005 |
| 6894328 |
Self-aligned bipolar transistor having recessed spacers and method for fabricating same |
May. 17, 2005 |
| 6894366 |
Bipolar junction transistor with a counterdoped collector region |
May. 17, 2005 |
| 6870242 |
Method for manufacturing and structure of semiconductor device with polysilicon definition structure |
Mar. 22, 2005 |
| 6867477 |
High gain bipolar transistor |
Mar. 15, 2005 |
| 6864538 |
Protection device against electrostatic discharges |
Mar. 8, 2005 |
| 6828644 |
Semiconductor device with reduced parasitic capacitance between impurity diffusion regions |
Dec. 7, 2004 |
| 6798040 |
Power semiconductor switch |
Sep. 28, 2004 |
| 6777781 |
Base-to-substrate leakage cancellation |
Aug. 17, 2004 |
| 6770951 |
P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture |
Aug. 3, 2004 |
| 6770953 |
Bipolar transistor |
Aug. 3, 2004 |
| 6768183 |
Semiconductor device having bipolar transistors |
Jul. 27, 2004 |
| 6753592 |
Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing |
Jun. 22, 2004 |
| 6730981 |
Bipolar transistor with inclined epitaxial layer |
May. 4, 2004 |
| 6724066 |
High breakdown voltage transistor and method |
Apr. 20, 2004 |
| 6677624 |
Carbon nanotubes transistor |
Jan. 13, 2004 |
| 6674144 |
Process for forming damascene-type isolation structure for integrated circuit |
Jan. 6, 2004 |
| 6674148 |
Lateral components in power semiconductor devices |
Jan. 6, 2004 |
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