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Class Information
Number: 257/555
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure > Complementary bipolar transistor structures (e.g., integrated injection logic, i 2 l)
Description: Subject matter wherein the device contains complementary bipolar transistor structures (i.e., both pnp and npn bipolar transistor structures).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7345347 |
Semiconductor device |
Mar. 18, 2008 |
| 7342293 |
Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Mar. 11, 2008 |
| 7265434 |
Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology |
Sep. 4, 2007 |
| 7129562 |
Dual-height cell with variable width power rail architecture |
Oct. 31, 2006 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6992338 |
CMOS transistor spacers formed in a BiCMOS process |
Jan. 31, 2006 |
| 6809396 |
Integrated circuit with a high speed narrow base width vertical PNP transistor |
Oct. 26, 2004 |
| 6717235 |
Semiconductor integrated circuit device having a test path |
Apr. 6, 2004 |
| 6569730 |
High voltage transistor using P+ buried layer |
May. 27, 2003 |
| 6537887 |
Integrated circuit fabrication |
Mar. 25, 2003 |
| 6469365 |
Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component |
Oct. 22, 2002 |
| 6423590 |
High voltage transistor using P+ buried layer |
Jul. 23, 2002 |
| 6265756 |
Electrostatic discharge protection device |
Jul. 24, 2001 |
| 6245609 |
High voltage transistor using P+ buried layer |
Jun. 12, 2001 |
| 6049118 |
Circuit built-in light-receiving element |
Apr. 11, 2000 |
| 6049131 |
Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness |
Apr. 11, 2000 |
| 6005284 |
Semiconductor device and its manufacturing method |
Dec. 21, 1999 |
| 6005282 |
Integrated circuit with complementary isolated bipolar transistors |
Dec. 21, 1999 |
| 5976940 |
Method of making plurality of bipolar transistors |
Nov. 2, 1999 |
| 5939759 |
Silicon-on-insulator device with floating collector |
Aug. 17, 1999 |
| 5915186 |
Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base |
Jun. 22, 1999 |
| 5847440 |
Bipolar transistor, semiconductor device having bipolar transistors |
Dec. 8, 1998 |
| 5838048 |
Semiconductor Bi-MIS device |
Nov. 17, 1998 |
| 5798560 |
Semiconductor integrated circuit having a spark killer diode |
Aug. 25, 1998 |
| 5641691 |
Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire |
Jun. 24, 1997 |
| RE35486 |
Circuital arrangement for preventing latchup in transistors with insulated collectors |
Apr. 1, 1997 |
| 5523606 |
BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors |
Jun. 4, 1996 |
| 5440153 |
Array architecture with enhanced routing for linear asics |
Aug. 8, 1995 |
| 5406106 |
Semiconductor Bi-MIS device and method of manufacturing the same |
Apr. 11, 1995 |
| 5376822 |
Heterojunction type of compound semiconductor integrated circuit |
Dec. 27, 1994 |
| 5331198 |
Semiconductor device including IIL and vertical transistors |
Jul. 19, 1994 |
| 5323054 |
Semiconductor device including integrated injection logic and vertical NPN and PNP transistors |
Jun. 21, 1994 |
| 5302848 |
Integrated circuit with complementary junction-isolated bipolar transistors |
Apr. 12, 1994 |
| 5254486 |
Method for forming PNP and NPN bipolar transistors in the same substrate |
Oct. 19, 1993 |
| 5185649 |
Circuital arrangement for preventing latchup in transistors with insulated collectors |
Feb. 9, 1993 |
| 5184203 |
Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate |
Feb. 2, 1993 |
| 5159427 |
Semiconductor substrate structure for use in power IC device |
Oct. 27, 1992 |
| 5132866 |
Device for protection against the formation of parasitic transistors in an integrated circuit for driving an inductive load |
Jul. 21, 1992 |
| 5119157 |
Semiconductor device with self-aligned contact to buried subcollector |
Jun. 2, 1992 |
| 5072287 |
Semiconductor device and method of manufacturing the same |
Dec. 10, 1991 |
| 5065214 |
Integrated circuit with complementary junction-isolated bipolar transistors |
Nov. 12, 1991 |
| 5045911 |
Lateral PNP transistor and method for forming same |
Sep. 3, 1991 |
| 5034337 |
Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices |
Jul. 23, 1991 |
| 4979008 |
Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components |
Dec. 18, 1990 |
| 4951115 |
Complementary transistor structure and method for manufacture |
Aug. 21, 1990 |
| 4910160 |
High voltage complementary NPN/PNP process |
Mar. 20, 1990 |
| 4908691 |
Selective epitaxial growth structure and isolation |
Mar. 13, 1990 |
| 4898836 |
Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another |
Feb. 6, 1990 |
| 4894622 |
Integrated current-mirror arrangement comprising vertical transistors |
Jan. 16, 1990 |
| 4891533 |
MOS-cascoded bipolar current sources in non-epitaxial structure |
Jan. 2, 1990 |
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