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Class Information
Number: 257/555
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure > Complementary bipolar transistor structures (e.g., integrated injection logic, i 2 l)
Description: Subject matter wherein the device contains complementary bipolar transistor structures (i.e., both pnp and npn bipolar transistor structures).










Sub-classes under this class:

Class Number Class Name Patents
257/556 Including lateral bipolar transistor structure 129


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8330223 Bipolar transistor Dec. 11, 2012
8115256 Semiconductor device Feb. 14, 2012
8030731 Isolated rectifier diode Oct. 4, 2011
8026569 Semiconductor device Sep. 27, 2011
7732800 Resistor random access memory cell with L-shaped electrode Jun. 8, 2010
7675140 Semiconductor circuit device and display data line driver Mar. 9, 2010
7619299 Semiconductor device and method of manufacturing the same Nov. 17, 2009
7518194 Current amplifying integrated circuit Apr. 14, 2009
7345347 Semiconductor device Mar. 18, 2008
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7265434 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology Sep. 4, 2007
7129562 Dual-height cell with variable width power rail architecture Oct. 31, 2006
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices Apr. 11, 2006
6992338 CMOS transistor spacers formed in a BiCMOS process Jan. 31, 2006
6809396 Integrated circuit with a high speed narrow base width vertical PNP transistor Oct. 26, 2004
6717235 Semiconductor integrated circuit device having a test path Apr. 6, 2004
6569730 High voltage transistor using P+ buried layer May. 27, 2003
6537887 Integrated circuit fabrication Mar. 25, 2003
6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component Oct. 22, 2002
6423590 High voltage transistor using P+ buried layer Jul. 23, 2002
6265756 Electrostatic discharge protection device Jul. 24, 2001
6245609 High voltage transistor using P+ buried layer Jun. 12, 2001
6049118 Circuit built-in light-receiving element Apr. 11, 2000
6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness Apr. 11, 2000
6005282 Integrated circuit with complementary isolated bipolar transistors Dec. 21, 1999
6005284 Semiconductor device and its manufacturing method Dec. 21, 1999
5976940 Method of making plurality of bipolar transistors Nov. 2, 1999
5939759 Silicon-on-insulator device with floating collector Aug. 17, 1999
5915186 Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base Jun. 22, 1999
5847440 Bipolar transistor, semiconductor device having bipolar transistors Dec. 8, 1998
5838048 Semiconductor Bi-MIS device Nov. 17, 1998
5798560 Semiconductor integrated circuit having a spark killer diode Aug. 25, 1998
5641691 Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire Jun. 24, 1997
RE35486 Circuital arrangement for preventing latchup in transistors with insulated collectors Apr. 1, 1997
5523606 BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors Jun. 4, 1996
5440153 Array architecture with enhanced routing for linear asics Aug. 8, 1995
5406106 Semiconductor Bi-MIS device and method of manufacturing the same Apr. 11, 1995
5376822 Heterojunction type of compound semiconductor integrated circuit Dec. 27, 1994
5331198 Semiconductor device including IIL and vertical transistors Jul. 19, 1994
5323054 Semiconductor device including integrated injection logic and vertical NPN and PNP transistors Jun. 21, 1994
5302848 Integrated circuit with complementary junction-isolated bipolar transistors Apr. 12, 1994
5254486 Method for forming PNP and NPN bipolar transistors in the same substrate Oct. 19, 1993
5185649 Circuital arrangement for preventing latchup in transistors with insulated collectors Feb. 9, 1993
5184203 Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate Feb. 2, 1993
5159427 Semiconductor substrate structure for use in power IC device Oct. 27, 1992
5132866 Device for protection against the formation of parasitic transistors in an integrated circuit for driving an inductive load Jul. 21, 1992
5119157 Semiconductor device with self-aligned contact to buried subcollector Jun. 2, 1992
5072287 Semiconductor device and method of manufacturing the same Dec. 10, 1991
5065214 Integrated circuit with complementary junction-isolated bipolar transistors Nov. 12, 1991
5045911 Lateral PNP transistor and method for forming same Sep. 3, 1991

1 2 3










 
 
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