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Class Information
Number: 257/554
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure > With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)
Description: Subject matter wherein a connecting region or contact made of a polycrystalline semiconductor material is present in the bipolar integrated circuit.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8624355 Semiconductor device and method for manufacturing the same Jan. 7, 2014
8492794 Vertical polysilicon-germanium heterojunction bipolar transistor Jul. 23, 2013
8242605 Semiconductor device and method of manufacturing the same Aug. 14, 2012
8013385 Semiconductor device Sep. 6, 2011
7968970 Semiconductor device, method for manufacturing semiconductor device, and power amplifier element Jun. 28, 2011
7776704 Method to build self-aligned NPN in advanced BiCMOS technology Aug. 17, 2010
7629646 Trench MOSFET with terraced gate and manufacturing method thereof Dec. 8, 2009
7432581 Semiconductor device, method of manufacture thereof and semiconductor integrated circuit Oct. 7, 2008
7265018 Method to build self-aligned NPN in advanced BiCMOS technology Sep. 4, 2007
7067898 Semiconductor device having a self-aligned base contact and narrow emitter Jun. 27, 2006
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices Apr. 11, 2006
6962842 Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Nov. 8, 2005
6809353 Method for fabricating a self-aligned bipolar transistor with planarizing layer and related structure Oct. 26, 2004
6808999 Method of making a bipolar transistor having a reduced base transit time Oct. 26, 2004
6784467 Method for fabricating a self-aligned bipolar transistor and related structure Aug. 31, 2004
6509625 Guard structure for bipolar semiconductor device Jan. 21, 2003
6433387 Lateral bipolar transistor Aug. 13, 2002
6225679 Method and apparatus for protecting a device against voltage surges May. 1, 2001
6114730 Semiconductor device and its manufacturing method Sep. 5, 2000
6104080 Integrated circuit having capacitors for smoothing a supply voltage Aug. 15, 2000
6078088 Low dielectric semiconductor device with rigid lined interconnection system Jun. 20, 2000
6005284 Semiconductor device and its manufacturing method Dec. 21, 1999
5994740 Semiconductor device Nov. 30, 1999
5861659 Semiconductor device Jan. 19, 1999
5861640 Mesa bipolar transistor with sub base layer Jan. 19, 1999
5856228 Manufacturing method for making bipolar device having double polysilicon structure Jan. 5, 1999
5844293 Semiconductor device with improved dielectric breakdown strength Dec. 1, 1998
5818100 Product resulting from selective deposition of polysilicon over single crystal silicon substrate Oct. 6, 1998
5777375 Semiconductor device improved in a structure of an L-PNP transistor Jul. 7, 1998
5708287 Power semiconductor device having an active layer Jan. 13, 1998
5592017 Self-aligned double poly BJT using sige spacers as extrinsic base contacts Jan. 7, 1997
5541124 Method for making bipolar transistor having double polysilicon structure Jul. 30, 1996
5504368 Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor Apr. 2, 1996
5420454 Selective epitaxial silicon for intrinsic-extrinsic base link May. 30, 1995
5397912 Lateral bipolar transistor Mar. 14, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
5355015 High breakdown lateral PNP transistor Oct. 11, 1994
5323054 Semiconductor device including integrated injection logic and vertical NPN and PNP transistors Jun. 21, 1994
5323055 Semiconductor device with buried conductor and interconnection layer Jun. 21, 1994
5315151 Transistor structure utilizing a deposited epitaxial base region May. 24, 1994
5313090 Bipolar memory cell having capacitors May. 17, 1994
5289024 Bipolar transistor with diffusion compensation Feb. 22, 1994
5192992 BICMOS device and manufacturing method thereof Mar. 9, 1993
5162252 Method of fabricating IIL and vertical complementary bipolar transistors Nov. 10, 1992
5163178 Semiconductor device having enhanced impurity concentration profile Nov. 10, 1992
5151765 Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics Sep. 29, 1992
5014107 Process for fabricating complementary contactless vertical bipolar transistors May. 7, 1991
4910170 Method of manufacturing semiconductor device Mar. 20, 1990
4875085 Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus Oct. 17, 1989
4874712 Fabrication method of bipolar transistor Oct. 17, 1989

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