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Class Information
Number: 257/554
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure > With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)
Description: Subject matter wherein a connecting region or contact made of a polycrystalline semiconductor material is present in the bipolar integrated circuit.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8624355 |
Semiconductor device and method for manufacturing the same |
Jan. 7, 2014 |
| 8492794 |
Vertical polysilicon-germanium heterojunction bipolar transistor |
Jul. 23, 2013 |
| 8242605 |
Semiconductor device and method of manufacturing the same |
Aug. 14, 2012 |
| 8013385 |
Semiconductor device |
Sep. 6, 2011 |
| 7968970 |
Semiconductor device, method for manufacturing semiconductor device, and power amplifier element |
Jun. 28, 2011 |
| 7776704 |
Method to build self-aligned NPN in advanced BiCMOS technology |
Aug. 17, 2010 |
| 7629646 |
Trench MOSFET with terraced gate and manufacturing method thereof |
Dec. 8, 2009 |
| 7432581 |
Semiconductor device, method of manufacture thereof and semiconductor integrated circuit |
Oct. 7, 2008 |
| 7265018 |
Method to build self-aligned NPN in advanced BiCMOS technology |
Sep. 4, 2007 |
| 7067898 |
Semiconductor device having a self-aligned base contact and narrow emitter |
Jun. 27, 2006 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6962842 |
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT |
Nov. 8, 2005 |
| 6809353 |
Method for fabricating a self-aligned bipolar transistor with planarizing layer and related structure |
Oct. 26, 2004 |
| 6808999 |
Method of making a bipolar transistor having a reduced base transit time |
Oct. 26, 2004 |
| 6784467 |
Method for fabricating a self-aligned bipolar transistor and related structure |
Aug. 31, 2004 |
| 6509625 |
Guard structure for bipolar semiconductor device |
Jan. 21, 2003 |
| 6433387 |
Lateral bipolar transistor |
Aug. 13, 2002 |
| 6225679 |
Method and apparatus for protecting a device against voltage surges |
May. 1, 2001 |
| 6114730 |
Semiconductor device and its manufacturing method |
Sep. 5, 2000 |
| 6104080 |
Integrated circuit having capacitors for smoothing a supply voltage |
Aug. 15, 2000 |
| 6078088 |
Low dielectric semiconductor device with rigid lined interconnection system |
Jun. 20, 2000 |
| 6005284 |
Semiconductor device and its manufacturing method |
Dec. 21, 1999 |
| 5994740 |
Semiconductor device |
Nov. 30, 1999 |
| 5861659 |
Semiconductor device |
Jan. 19, 1999 |
| 5861640 |
Mesa bipolar transistor with sub base layer |
Jan. 19, 1999 |
| 5856228 |
Manufacturing method for making bipolar device having double polysilicon structure |
Jan. 5, 1999 |
| 5844293 |
Semiconductor device with improved dielectric breakdown strength |
Dec. 1, 1998 |
| 5818100 |
Product resulting from selective deposition of polysilicon over single crystal silicon substrate |
Oct. 6, 1998 |
| 5777375 |
Semiconductor device improved in a structure of an L-PNP transistor |
Jul. 7, 1998 |
| 5708287 |
Power semiconductor device having an active layer |
Jan. 13, 1998 |
| 5592017 |
Self-aligned double poly BJT using sige spacers as extrinsic base contacts |
Jan. 7, 1997 |
| 5541124 |
Method for making bipolar transistor having double polysilicon structure |
Jul. 30, 1996 |
| 5504368 |
Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor |
Apr. 2, 1996 |
| 5420454 |
Selective epitaxial silicon for intrinsic-extrinsic base link |
May. 30, 1995 |
| 5397912 |
Lateral bipolar transistor |
Mar. 14, 1995 |
| 5387813 |
Transistors with emitters having at least three sides |
Feb. 7, 1995 |
| 5355015 |
High breakdown lateral PNP transistor |
Oct. 11, 1994 |
| 5323054 |
Semiconductor device including integrated injection logic and vertical NPN and PNP transistors |
Jun. 21, 1994 |
| 5323055 |
Semiconductor device with buried conductor and interconnection layer |
Jun. 21, 1994 |
| 5315151 |
Transistor structure utilizing a deposited epitaxial base region |
May. 24, 1994 |
| 5313090 |
Bipolar memory cell having capacitors |
May. 17, 1994 |
| 5289024 |
Bipolar transistor with diffusion compensation |
Feb. 22, 1994 |
| 5192992 |
BICMOS device and manufacturing method thereof |
Mar. 9, 1993 |
| 5162252 |
Method of fabricating IIL and vertical complementary bipolar transistors |
Nov. 10, 1992 |
| 5163178 |
Semiconductor device having enhanced impurity concentration profile |
Nov. 10, 1992 |
| 5151765 |
Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
Sep. 29, 1992 |
| 5014107 |
Process for fabricating complementary contactless vertical bipolar transistors |
May. 7, 1991 |
| 4910170 |
Method of manufacturing semiconductor device |
Mar. 20, 1990 |
| 4875085 |
Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus |
Oct. 17, 1989 |
| 4874712 |
Fabrication method of bipolar transistor |
Oct. 17, 1989 |
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