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Class Information
Number: 257/553
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure > Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics
Description: Subject matter wherein plural bipolar transistor structures are present which have the same electrical conductivity type (e.g., npn) but have different current gain or different operating voltage characteristics.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7276744 |
Semiconductor device and method of manufacturing the same |
Oct. 2, 2007 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6977426 |
Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate |
Dec. 20, 2005 |
| 6933588 |
High performance SCR-like BJT ESD protection structure |
Aug. 23, 2005 |
| 6787795 |
Logic apparatus and logic circuit |
Sep. 7, 2004 |
| 6693344 |
Semiconductor device having low and high breakdown voltage transistors |
Feb. 17, 2004 |
| 6495896 |
Semiconductor integrated circuit device with high and low voltage wells |
Dec. 17, 2002 |
| 6104080 |
Integrated circuit having capacitors for smoothing a supply voltage |
Aug. 15, 2000 |
| 6084286 |
Integrated device in an emitter switching configuration and with a cellular structure |
Jul. 4, 2000 |
| 5994740 |
Semiconductor device |
Nov. 30, 1999 |
| 5976940 |
Method of making plurality of bipolar transistors |
Nov. 2, 1999 |
| 5892268 |
Inductive load driving and control circuits inside isolation regions |
Apr. 6, 1999 |
| 5708287 |
Power semiconductor device having an active layer |
Jan. 13, 1998 |
| 5545918 |
Circuit construction for controlling saturation of a transistor |
Aug. 13, 1996 |
| 5523606 |
BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors |
Jun. 4, 1996 |
| 5508551 |
Current mirror with saturation limiting |
Apr. 16, 1996 |
| 5500551 |
Integrated emitter switching configuration using bipolar transistors |
Mar. 19, 1996 |
| 5426328 |
BICDMOS structures |
Jun. 20, 1995 |
| 5300805 |
Epitaxial tub bias structure for integrated circuits |
Apr. 5, 1994 |
| 5151765 |
Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
Sep. 29, 1992 |
| 5121185 |
Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages |
Jun. 9, 1992 |
| 4935800 |
Semiconductor integrated circuit |
Jun. 19, 1990 |
| 4807011 |
Semiconductor integrated circuit incorporating SITS |
Feb. 21, 1989 |
| 4536784 |
Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body |
Aug. 20, 1985 |
| 4458158 |
IC Including small signal and power devices |
Jul. 3, 1984 |
| 4412142 |
Integrated circuit incorporating low voltage and high voltage semiconductor devices |
Oct. 25, 1983 |
| 4228448 |
Bipolar integrated semiconductor structure including I.sup.2 L and linear type devices and fabrication methods therefor |
Oct. 14, 1980 |
| 4202006 |
Semiconductor integrated circuit device |
May. 6, 1980 |
| 4189738 |
Semiconductor integrated circuit device |
Feb. 19, 1980 |
| 4136353 |
Bipolar transistor with high-low emitter impurity concentration |
Jan. 23, 1979 |
| 4047217 |
High-gain, high-voltage transistor for linear integrated circuits |
Sep. 6, 1977 |
| 4047220 |
Bipolar transistor structure having low saturation resistance |
Sep. 6, 1977 |
| 4030954 |
Method of manufacturing a semiconductor integrated circuit device |
Jun. 21, 1977 |
| 3969748 |
Integrated multiple transistors with different current gains |
Jul. 13, 1976 |
| 3961340 |
Integrated circuit having bipolar transistors and method of manufacturing said circuit |
Jun. 1, 1976 |
| 3946336 |
Microwave solid state circuit employing a bipolar transistor structure |
Mar. 23, 1976 |
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