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Class Information
Number: 257/552
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With bipolar transistor structure
Description: Subject matter wherein the junction isolation is formed in an integrated circuit between active devices at least one of which has a bipolar transistor structure.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439607 |
Beta control using a rapid thermal oxidation |
Oct. 21, 2008 |
| 7361991 |
Closed air gap interconnect structure |
Apr. 22, 2008 |
| 7358545 |
Bipolar junction transistor |
Apr. 15, 2008 |
| 7332752 |
Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal |
Feb. 19, 2008 |
| 7301220 |
Semiconductor device and method of forming a semiconductor device |
Nov. 27, 2007 |
| 7276744 |
Semiconductor device and method of manufacturing the same |
Oct. 2, 2007 |
| 7265018 |
Method to build self-aligned NPN in advanced BiCMOS technology |
Sep. 4, 2007 |
| 7265434 |
Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology |
Sep. 4, 2007 |
| 7224064 |
Semiconductor device having conductive interconnections and porous and nonporous insulating portions |
May. 29, 2007 |
| 7173316 |
Semiconductor device |
Feb. 6, 2007 |
| 7144785 |
Method of forming isolation trench with spacer formation |
Dec. 5, 2006 |
| 7126171 |
Bipolar transistor |
Oct. 24, 2006 |
| 7071500 |
Semiconductor device and manufacturing method for the same |
Jul. 4, 2006 |
| 7071516 |
Semiconductor device and driving circuit for semiconductor device |
Jul. 4, 2006 |
| 7067898 |
Semiconductor device having a self-aligned base contact and narrow emitter |
Jun. 27, 2006 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6995453 |
High voltage integrated circuit including bipolar transistor within high voltage island area |
Feb. 7, 2006 |
| 6992338 |
CMOS transistor spacers formed in a BiCMOS process |
Jan. 31, 2006 |
| 6984593 |
Beta control using a rapid thermal oxidation |
Jan. 10, 2006 |
| 6977425 |
Semiconductor device having a lateral MOSFET and combined IC using the same |
Dec. 20, 2005 |
| 6972442 |
Efficiently fabricated bipolar transistor |
Dec. 6, 2005 |
| 6972466 |
Bipolar transistors with low base resistance for CMOS integrated circuits |
Dec. 6, 2005 |
| 6967406 |
Semiconductor integrated circuit |
Nov. 22, 2005 |
| 6953981 |
Semiconductor device with deep substrates contacts |
Oct. 11, 2005 |
| 6936910 |
BiCMOS technology on SOI substrates |
Aug. 30, 2005 |
| 6881998 |
Semiconductor device and method for producing the same |
Apr. 19, 2005 |
| 6878976 |
Carbon-modulated breakdown voltage SiGe transistor for low voltage trigger ESD applications |
Apr. 12, 2005 |
| 6867090 |
Semiconductor device and method of manufacturing thereof |
Mar. 15, 2005 |
| 6858916 |
Semiconductor memory device with series-connected antifuse-components |
Feb. 22, 2005 |
| 6853048 |
Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof |
Feb. 8, 2005 |
| 6838709 |
Bipolar transistor |
Jan. 4, 2005 |
| 6838745 |
Semiconductor device having a separation structure for high withstand voltage |
Jan. 4, 2005 |
| 6828635 |
Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process |
Dec. 7, 2004 |
| 6808999 |
Method of making a bipolar transistor having a reduced base transit time |
Oct. 26, 2004 |
| 6800926 |
Tracking circuit |
Oct. 5, 2004 |
| 6768145 |
Semiconductor integrated circuit device |
Jul. 27, 2004 |
| 6759731 |
Bipolar junction transistor and fabricating method |
Jul. 6, 2004 |
| 6724050 |
ESD improvement by a vertical bipolar transistor with low breakdown voltage and high beta |
Apr. 20, 2004 |
| 6717235 |
Semiconductor integrated circuit device having a test path |
Apr. 6, 2004 |
| 6713780 |
Process using poly-buffered STI |
Mar. 30, 2004 |
| 6703283 |
Discontinuous dielectric interface for bipolar transistors |
Mar. 9, 2004 |
| 6703685 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors |
Mar. 9, 2004 |
| 6653708 |
Complementary metal oxide semiconductor with improved single event performance |
Nov. 25, 2003 |
| 6624502 |
Method and device for limiting the substrate potential in junction isolated integrated circuits |
Sep. 23, 2003 |
| 6617646 |
Reduced substrate capacitance high performance SOI process |
Sep. 9, 2003 |
| 6608383 |
Semiconductor device including capacitor with lower electrode including iridium and iridium oxide layers |
Aug. 19, 2003 |
| 6603186 |
Bipolar transistor with base drive circuit protection |
Aug. 5, 2003 |
| 6566756 |
Semiconductor device with porous interlayer film of a range of average diameter having partially closed holes |
May. 20, 2003 |
| 6509625 |
Guard structure for bipolar semiconductor device |
Jan. 21, 2003 |
| 6384433 |
Voltage variable resistor from HBT epitaxial layers |
May. 7, 2002 |
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